50v-1000v 1.0a surface mount fast recovery rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 1 of 2 rs1a thru RS1M features glass passivated die construction fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 30a peak ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch sma weight: 0.064 grams (approx.) smb weight: 0.093 grams (approx.) mounting position: any marking: type number absolute maximum ratings* t a = 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. device mounted on fr-4 pcb 0.013 mm. electrical characteristics t a = 25c unless otherwise noted symbol parameter value units i o average rectified current @ t a = 100 c 1.0 a i f(surge) peak forward surge current 8.3 ms single half-sine-wave superimposed on rated load (jedec method) 30 a p d total device dissipation derate above 25 c 1.19 9.5 w mw / c r q ja thermal resistance, junction to ambient ** 105 c/w r q jc thermal resistance, junction to case ** 32 c/w t stg storage temperature range -55 to +150 c t j operating junction temperature -55 to +150 c parameter device units 1a 1b 1d 1g 1j 1k 1m peak repetitive reverse voltage 50 100 200 400 600 800 1000 v maximum rms voltage 35 70 140 280 420 560 700 v dc reverse voltage (rated v r ) 50 100 200 400 600 800 1000 v maximum reverse current @ rated v r t a = 25 c t a = 125 c 5.0 50 m a m a maximum forward voltage @ 1.0 a 1.3 v maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a 150 250 500 ns typical junction capacitance v r = 4.0 v, f = 1.0 mhz 10 pf
surface mount fast recovery rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 50v-1000v 1.0a rs1a thru RS1M 0 0.4 1 . 2 25 50 75 100 125 150 175 i , average rectified current (a) o t , terminal temperature ( c) fi g . 1 forward current deratin g curve t 0.2 0.6 0.8 1.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i inst antaneous forward current (a) f, v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t = 25c j i pulse width: 300 s f 0 10 20 30 1 10 100 i , peak forward surge current (a ) fsm number of cycles at 60hz fi g . 3 forward sur g e current deratin g curve single half-sine-wave (jedec method) t = 150c j 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , instantaneous reverse current (a ) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 125 c j t = 25c j 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fig . 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 2 of 2
|
