n-ch 30v fast switching mosfets the UN3002N3 is the highest performance 1 symbol parameter rating units 10s steady state v ds drain-source voltage 30 v v gs gate-sou u ce voltage f 20 3 v i d @t c =25 continuous drain current, v gs @ 10v 1 28 a i d @t c =100 continuous drain current, v gs @ 10v 1 18 a i d @t a =25 continuous drain current, v gs @ 10v 1 11.8 7.5 a i d @t a =70 continuous drain current, v gs @ 10v 1 9.5 6 a i dm pulsed drain current 2 65 a eas single pulse avalanche energy 3 72 mj i as avalanche current 20 a p d @t c =25 total power dissipation 4 20.8 w p d @t a =25 total power dissipation 4 4.2 1.67 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 75 /w 3 r ja thermal resistance junction-ambient 1 (t ? 10s) --- 30 /w 3 r jc thermal resistance junction-case 1 --- 6 /w 3 bvdss rdson id 30v 18m 28a absolute maximum ratings thermal data rev a.02 d070711 trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch dfn3x3 pin configuration product summery d g s s s the UN3002N3 is the highest performance the UN3002N3 meet the rohs and green UN3002N3 unitpower
2 n-ch 30v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v ? bv dss a? t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.022 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =15a --- 14.5 18 m : v gs =4.5v , i d =10a --- 20 26 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.2 1.5 2.5 v ? v gs(th) v gs(th) temperature coefficient --- -3.92 --- mv/ i dss drain-source leakage current v ds =24v , v gs =0v , t j =25 --- --- 1 ua v ds =24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =5v , i d =15a --- 22 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 1.04 2.1 : q g total gate charge (4.5v) v ds =15v , v gs =4.5v , i d =15a --- 6.1 8.5 nc q gs gate-source charge --- 2 2.8 q gd gate-drain charge --- 2 2.8 t d(on) turn-on delay time v dd =15v , v gs =10v , r g =3.3 : i d =15a --- 1.2 2.4 ns t r rise time --- 14.4 26 t d(off) turn-off delay time --- 16.4 33 t f fall time --- 7.2 14.4 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 583 816 pf c oss output capacitance --- 77 108 c rss reverse transfer capacitance --- 59 83 symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =10a 16 --- --- mj symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 28 a i sm pulsed source current 2,6 --- --- 65 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =15a , di/dt=100a/s , t j =25 --- 7.6 --- ns q rr reverse recovery charge --- 2.4 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =20a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics guaranteed avalanche characteristics UN3002N3 unitpower
3 n-ch 30v fast switching mosfets 0 10 20 30 40 50 60 70 80 01234 v ds , drain-to-source voltage (v) i d drain current (a) v gs =7v v gs =5v v gs =4.5v v gs =3v v gs =10v 16 18 20 22 24 26 28 46810 v gs (v) r dson (m
) i d =15a 0 10 20 30 40 50 60 70 00.30.60.91.2 v sd , source-to-drain voltage (v) i s source current(a) t j =150 : t j =25 : 0 2 4 6 8 10 03691215 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =15a v ds =15v 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j unitpower UN3002N3
4 n-ch 30v fast switching mosfets 10 100 1000 1471013161922 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 v ds (v) i d (a) 10us 100us 10ms 100ms dc t c =25 : single pulse 1ms 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t j peak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform unitpower UN3002N3
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