AON5820 20v common-drain dual n-channel mosfet v ds i d (at v gs =4.5v) 10a r ds(on) (at v gs =4.5v) < 9.5m w r ds(on) (at v gs =4.0v) < 10m w r ds(on) (at v gs =3.5v) < 10.5m w r ds(on) (at v gs =3.1v) < 11.5m w r ds(on) (at v gs =2.5v) < 13m w typical esd protection hbm class 2 the AON5820 uses advanced trench technology to provide excellent r ds(on), low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating it is esd protected. this device is suitabl e for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. 20v g1 s1 g2 s2 d1 d2 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jc thermal characteristics 1.7 power dissipation a p dsm w t a =70c 1 t a =25c v 12 gate-source voltage units maximum junction-to-ambient a c/w r q ja 30 61 40 parameter typ max junction and storage temperature range -55 to 150 c v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 20 85 pulsed drain current c continuous drain current a 10 8 t a =25c t a =70c i d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 4.5 75 5.5 general description product summary www.freescale.net.cn 1/6
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.3 0.65 1.0 v i d(on) 85 a 5.5 7.4 9.5 t j =125c 8 11 14 5.8 7.6 10 m w 6 8 10.5 m w 6.3 8.3 11.5 m w 6.8 9.2 13 m w g fs 65 s v sd 0.58 1 v i s 2.5 a c iss 1000 1255 1510 pf c oss 150 220 290 pf c rss 100 168 235 pf r g 2.5 k w q g 10 12.5 15 nc q gs 5.5 nc q 6.5 nc v gs =4.5v, v ds =5v v gs =4.5v, i d =10a static drain-source on-resistance diode forward voltage m w on state drain current gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge switching parameters v gs =4.5v, v ds =10v, i d =10a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v v ds =v gs, i d =250 m a v ds =0v, v gs =10v maximum body-diode continuous current input capacitance output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =10a dynamic parameters v gs =2.5v, i d =8a v gs =4.0v, i d =10a v gs =3.5v, i d =9a v gs =3.1v, i d =9a gate-body leakage current r ds(on) q gd 6.5 nc t d(on) 1.1 m s t r 2.6 m s t d(off) 7 m s t f 7.4 m s t rr 8.5 11 13.5 ns q rr 12 15 18 nc turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =1 w , r gen =3 w turn-off fall time gate drain charge turn-on delaytime i f =10a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =10a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON5820 www.freescale.net.cn 2/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.0v i d =10a v gs =4.5v i d =10a v gs =2.5v i d =8a v gs =3.1v i d =9a v gs =3.5v i d =9a 25 c 125 c v ds =5v v gs =3.1v v gs =4.5v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4.5v 2.5v 3v v gs =4.0v v gs =3.5v v gs =2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =10a 25 c 125 c AON5820 www.freescale.net.cn 3/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case c oss c rss v ds =10v i d =10a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 40 (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =5.5 c/w AON5820 www.freescale.net.cn 4/6
typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note f) 0 5 10 15 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =75 c/w AON5820 www.freescale.net.cn 5/6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform + dut l vgs isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rr q = - idt t rr - + vd c d u t v d d v gs v ds v gs r l r g v g s v ds 1 0% 90 % r esis tive s w itching te st c irc uit & w av eform s t t r d(on ) t on t d (o ff) t f t off ig vgs - + vdc vds i rm vdd vdd AON5820 www.freescale.net.cn 6/6
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