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| transmissive opto sensors 19 www.fairchildsemi.com/infrared cny36 20 10 0.2 30 phototransistor 0.94 0.94 3.15 h22a1 20 5 1.00 30 phototransistor 0.94 0.94 3.15 h22a2 20 5 2.00 30 phototransistor 0.94 0.94 3.15 h22a3 20 5 4.00 30 phototransistor 0.94 0.94 3.15 h22a4 20 5 1.00 55 phototransistor 0.94 0.94 3.15 h22a5 20 5 2.00 55 phototransistor 0.94 0.94 3.15 H22A6 20 5 4.00 55 phototransistor 0.94 0.94 3.15 h22b1 10 1.5 7.50 30 photodarlington 0.94 0.94 3.15 h22b2 10 1.5 14.00 30 photodarlington 0.94 0.94 3.15 h22b3 10 1.5 25.00 30 photodarlington 0.94 0.94 3.15 h22b4 10 1.5 7.50 55 photodarlington 0.94 0.94 3.15 h22b5 10 1.5 14.00 55 photodarlington 0.94 0.94 3.15 h22b6 10 1.5 25.00 55 photodarlington 0.94 0.94 3.15 test i c (on) bv ceo aperture width gap part conditions (ma) (v) (mm) width number i f (ma) v ce (v) min min output emitter sensor (mm) slotted switch h22 (analog ?standard resolution) + e+ d 2 0.129 (3.3) 0.119 (3.0) 0.433 (11.0) 0.422 (10.7) 0.315 (8.0) 0.295 (7.5) 0.272 (6.9) 0.110 (2.8) 0.091 (2.3) 1 3 4 0.020 (0.51) (sq) 0.472 (12.0) 0.457 (11.6) 0.249 (6.35) 0.243 (6.15) 0.39 (1.00) 0.34 (0.85) 0.133 (3.38) 0.073 (1.85) optical c l l c c l c l pin 1 anode pin 2 cathode pin 3 collector pin 4 emitter 0.125 (3.2) 0.119 (3.0) all dimensions are in inches (millimeters) parameter cny h22a1-a3 h22a4-a6 h21b1-b3 h22b4-b6 temperature t opr ?5 to +85? ?5 to +100? ?5 to +100? ?5 to +100? ?5 to +100? t stg ?5 to +85? ?5 to +100? ?5 to +100? ?5 to +100? ?5 to +100? t sol-i 240? for 5 sec for all devices t sol-f 260? for 10 sec for all devices input diode i f 60 ma 60 ma 60 ma 60 ma 60 ma v r 3.0 v 6.0 v 6.0 v 6.0 v 6.0 v p d 100 mw 100 mw 100 mw 100 mw 100 mw output transistor v ceo 30 v 30 v 55 v 30 v 55 v v eco 4.5 v 4.5 v 4.5 v 6.0 v 6.0 v i c 20 ma 20 ma 20 ma 40 ma 40 ma p d 150 mw 150 mw 150 mw 150 mw 150 mw absolute maximum ratings
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