VS-6CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 1 document number: 94743 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 3 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? aec-q101 qualified ? meets jesd 201 class 1a whisker test ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description/applications vishay semiconductors 200 v series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. ? the planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliabilit y characteristics. ? these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. ? their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switch ing element and snubbers. product summary package d-pak (to-252aa) i f(av) 2 x 3 a v r 200 v v f at i f 1.0 v t rr typ. see recovery table t j max. 175 c diode variation common cathode base common cathode common cathode 2 4 13 anode anode d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per device i f(av) total device, rated v r , t c = 159 c 6 a non-repetitive peak surge current i fsm 50 peak repetitive forw ard current per diode i fm rated v r , square wave, 20 khz, t c = 159 c 6 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condi tions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 3 a - - 1 i f = 3 a, t j = 125 c - - 0.9 i f = 6 a - - 1.2 i f = 6 a, t j = 125 c - - 1.08 reverse leakage current i r v r = v r rated - - 5 a t j = 125 c, v r = v r rated - - 100 junction capacitance c t v r = 200 v - 12 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
VS-6CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 2 document number: 94743 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 20 35 ns t j = 25 c i f = 3 a ? v r = 160 v ? di f /dt = 200 a/s -19- t j = 125 c - 26 - peak recovery current i rrm t j = 25 c - 3.1 - a t j = 125 c - 4.6 - reverse recovery charge q rr t j = 25 c - 30 - nc t j = 125 c - 60 - thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and ? storage temperature range t j , t stg - 65 - 175 c thermal resistance, ? junction to case per leg r thjc --5 c/w thermal resistance, ? junction to ambient per leg r thja --80 thermal resistance, ? case to heatsink r thcs --- weight -0.3-g -0.01-oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style d-pak 6cwh02fnh
VS-6CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 3 document number: 94743 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junc tion capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 tj = 25c tj = 125c tj = 175c reverse voltage - v r (v) reverse current - i r (a) 0.001 0.01 0.1 1 10 100 050100150200 25?c t = 175?c j 100?c 125?c 150?c reverse voltage - v r (v) junction capacitance - c t (pf) 10 100 1 10 100 1000 t = 25?c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.5 d = 0.2
VS-6CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 4 document number: 94743 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 1 2 3 4 5 130 140 150 160 170 180 dc see note (1) square wave (d=0.50) rated vr applied average power loss ( watts ) average forward current - i f (av) (a) 012345 0 1 2 3 4 5 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rms limit dc trr ( nc ) di f /dt (a/s ) 10 20 30 40 50 0 0 0 1 0 0 1 if = 3 a if = 6 a r j j v = 30v t = 125?c t = 25?c qrr ( nc ) di f /dt (a/s ) 0 20 40 60 80 100 120 140 0 0 0 1 0 0 1 r j j v = 30v t = 125?c t = 25?c if = 6 a if = 3 a
VS-6CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 5 document number: 94743 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-6CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 6 document number: 94743 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-6CWH02FNHM3 75 3000 antistatic plastic tube vs-6cwh02fntrhm3 2000 2000 13" diameter reel vs-6cwh02fntrrhm3 3000 3000 13" diameter reel vs-6cwh02fntrlhm3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?95033 2 - current rating (6 = 6 a) 1 - vishay semiconductors product 3 - center tap configuration - 4 4 - package identifier: w = d-pak 5 - h = hyperfast recovery 6 - voltage rating (02 = 200 v) 7 - fn = to-252aa 8 - none = tube (50 pieces) tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 2 4 6 7 8 9 6 vs- c w h 02 fn trl h m3 10 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 10 9 - h = aec-q101 qualified
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