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| SUD40N03-18P v ds (v) r ds(on) ( ) i d (a) a 30 0.018 @ v gs = 10 v 40 30 0.027 @ v gs = 4.5 v 34 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD40N03-18P parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 a continuous drain current (t j = 175 c) b t c = 100 c i d 28 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 40 maximum power dissipation t c = 25 c p d 62.5 c w maximum power dissipation t a = 25 c p d 7.5 b w operating junction and storage temperature range t j , t stg 55 to 175 c parameter symbol typical maximum unit junction - to - ambient b t 10 sec r thja 17 20 c/w j unc ti on- t o- a m bi en t b steady state r thja 50 60 c/w junction-to-case r thjc 2 2.4 junction-to-lead r thjl 4 4.8 c/w notes a. package limited. b. surface mounted on 1o x1o fr4 board, t 10 sec. c. see soa curve for voltage derating. n-channel 30 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 4 SUD40N03-18P vishay siliconix new product document number: 71086 s-63636erev. a, 08-nov-99 www.vishay.com faxback 408-970-5600 2-1 n-channel 30-v (d-s) 175 c mosfet v ds (v) r ds(on) ( ) i d (a) a 30 0.018 @ v gs = 10 v 40 30 0.027 @ v gs = 4.5 v 34 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD40N03-18P parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 a continuous drain current (t j = 175 c) b t c = 100 c i d 28 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 40 maximum power dissipation t c = 25 c p d 62.5 c w maximum power dissipation t a = 25 c p d 7.5 b w operating junction and storage temperature range t j , t stg 55 to 175 c parameter symbol typical maximum unit junction - to - ambient b t 10 sec r thja 17 20 c/w j unc ti on- t o- a m bi en t b steady state r thja 50 60 c/w junction-to-case r thjc 2 2.4 junction-to-lead r thjl 4 4.8 c/w notes a. package limited. b. surface mounted on 1o x1o fr4 board, t 10 sec. c. see soa curve for voltage derating. parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 40 a dis os r i b v gs = 10 v, i d = 20 a 0.014 0.018 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.029 v gs = 4.5 v, i d = 10 a 0.021 0.027 forward transconductance b g fs v ds = 15 v, i d = 20 a 10 s dynamic a input capacitance c iss v 0 v v 25 v f 1 mh 1300 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 340 pf reverse transfer capacitance c rss 95 total gate charge c q g v15vv10vi40a 19 30 c gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 40 a 5 nc gate-drain charge c q gd 3 turn-on delay time c t d(on) v15vr037 8 12 rise time c t r v dd = 15 v, r l = 0.37 i 40a v 10v r 25 8.5 13 ns turn-off delay time c t d(off) dd , l i d 40 a, v gen = 10 v, r g = 2.5 17 25 ns fall time c t f 6 9 source-drain diode ratings and characteristic (t c = 25 c) continuous current i s 40 a pulsed current i sm 80 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.5 v source-drain reverse recovery time t rr i f = 40 a, di/dt = 100 a/ s 30 50 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www.freescale.net.cn 2 / 4 SUD40N03-18P n-channel 30 v (d-s) 175 c mosfet SUD40N03-18P vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 71086 s-63636erev. a, 08-nov-99 parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 40 a dis os r i b v gs = 10 v, i d = 20 a 0.014 0.018 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.029 v gs = 4.5 v, i d = 10 a 0.021 0.027 forward transconductance b g fs v ds = 15 v, i d = 20 a 10 s dynamic a input capacitance c iss v 0 v v 25 v f 1 mh 1300 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 340 pf reverse transfer capacitance c rss 95 total gate charge c q g v15vv10vi40a 19 30 c gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 40 a 5 nc gate-drain charge c q gd 3 turn-on delay time c t d(on) v15vr037 8 12 rise time c t r v dd = 15 v, r l = 0.37 i 40a v 10v r 25 8.5 13 ns turn-off delay time c t d(off) dd , l i d 40 a, v gen = 10 v, r g = 2.5 17 25 ns fall time c t f 6 9 source-drain diode ratings and characteristic (t c = 25 c) continuous current i s 40 a pulsed current i sm 80 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.5 v source-drain reverse recovery time t rr i f = 40 a, di/dt = 100 a/ s 30 50 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. 0 10 20 30 40 50 60 0 20406080100120 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) ) v gs transconductance (s) g fs 0 40 80 120 160 0246810 0 4 8 12 16 20 0 10203040 0 0.01 0.02 0.03 0.04 0.05 0.06 0 20406080100120 0 40 80 120 160 0246810 25 c 125 c 5 v t c = 55 c v ds = 15 v i d = 40 a v gs = 10 thru 8 v 6 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 2, 3 v 4 v c oss c iss i d drain current (a) 6 v www.freescale.net.cn 3 / 4 SUD40N03-18P n-channel 30 v (d-s) 175 c mosfet SUD40N03-18P vishay siliconix new product document number: 71086 s-63636erev. a, 08-nov-99 www.vishay.com faxback 408-970-5600 2-3 0 10 20 30 40 50 60 0 20406080100120 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) ) v gs transconductance (s) g fs 0 40 80 120 160 0246810 0 4 8 12 16 20 0 10203040 0 0.01 0.02 0.03 0.04 0.05 0.06 0 20406080100120 0 40 80 120 160 0246810 25 c 125 c 5 v t c = 55 c v ds = 15 v i d = 40 a v gs = 10 thru 8 v 6 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 2, 3 v 4 v c oss c iss i d drain current (a) 6 v on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) ) source current (a) i s 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 40 a t j = 25 c t j = 175 c 0 safe operating area v ds drain-to-source voltage (v) drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance maximum avalanche drain current vs. case temperature t c case temperature ( c) drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 30 www.freescale.net.cn 4 / 4 SUD40N03-18P n-channel 30 v (d-s) 175 c mosfet SUD40N03-18P vishay siliconix new product www.vishay.com faxback 408-970-5600 2-4 document number: 71086 s-63636erev. a, 08-nov-99 on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) ) source current (a) i s 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 40 a t j = 25 c t j = 175 c 0 safe operating area v ds drain-to-source voltage (v) drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance maximum avalanche drain current vs. case temperature t c case temperature ( c) drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 30 |
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