semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 2754 issue 1 2N3767SMD npn bipolar transistor in a ceramic surface mount package for high rel applications features ? high voltage fast switching ceramic surface mount package screening options available v cbo collector ? base voltage v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i b = 0) i b base current i c collector current t j , t stg operating and storage junction temperature range r q jc thermal resistance junction to case p d power dissipation 100v 80v 6v 2a 4a ?55 to +150c 4.16c/w 25w mechanical data dimensions in mm (inches) smd1 absolute maximum ratings (t case = 25c unless otherwise stated) 1 = base underside view 2 = collector 3 = emitter
parameter test conditions min. typ. max. unit document number 2754 issue 1 2N3767SMD semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 200 250 0.7 0.7 0.75 2.5 1.5 40 160 50 40 0.25 2.5 i c = 10ma i b = 0 i c = 10ma r eb = 100 w v ce = 60v i b = 0 v ce = 80v t c = 150c v eb = 6v i e = 0 i c = 1.0a i b = 0.1a i c = 1.0a i b = 0.3a i c = 0.5ma v ce = 2v v cb = 10v f = 100khz v ce = 10v i c = 0.5a f = 10mhz i c = 0.5a v cc = 30v i b1 = - i b2 = 50ma i c = 0.5a v cc = 30v i b1 = - i b2 = 50ma v ceo(sus) collector ? emitter sustaining voltage v cer(sus) collector ? emitter sustaining voltage i ces collector ? emitter cut-off current i ebo emitter base cut-off current v ce(sat) collector ? emitter saturation voltage v be(sat) base ? emitter on voltage h fe dc current gain c obo output capacitance [h fe ] small signal current gain t on turn on time t off turn off time v ma ma v ? pf ? m sec m se c electrical characteristics (t a = 25c unless otherwise stated) 1) f t is defined as the frequency at which |h fe | extrapolates to untity.
|
