IRG4BC30FD insulated gate bipolar transistor with ultrafast soft recovery diode features features features features features e g n-channel c v ces = 600v v ce(on) typ. = 1.59v @v ge = 15v, i c = 17a parameter min. typ. max. units r q jc junction-to-case - igbt ------ ------ 1.2 r q jc junction-to-case - diode ------ ------ 2.5 c/w r q cs case-to-sink, flat, greased surface ------ 0.50 ------ r q ja junction-to-ambient, typical socket mount ----- ----- 80 wt weight ------ 2 (0.07) ------ g (oz) thermal resistance fast copack igbt 12/8/98 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 17 i cm pulsed collector current ? 120 a i lm clamped inductive load current ? 120 i f @ t c = 100c diode continuous forward current 12 i fm diode maximum forward current 120 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) ? fast: optimized for medium operating frequencies ( 1-5 khz in hard switching, >20 khz in resonant mode). ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard to-220ab package benefits ? generation -4 igbt's offer highest efficiencies available ? igbt's optimized for specific application conditions ? hexfred diodes optimized for performance with igbt's . minimized recovery characteristics require less/no snubbing ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's pd -91451b w to-220ab www.irf.com 1
IRG4BC30FD 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 51 77 i c = 17a qge gate - emitter charge (turn-on) ---- 7.9 12 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 19 28 v ge = 15v t d(on) turn-on delay time ---- 42 ---- t j = 25c t r rise time ---- 26 ---- ns i c = 17a, v cc = 480v t d(off) turn-off delay time ---- 230 350 v ge = 15v, r g = 23 w t f fall time ---- 160 230 energy losses include "tail" and e on turn-on switching loss ---- 0.63 ---- diode reverse recovery. e off turn-off switching loss ---- 1.39 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 2.02 3.9 t d(on) turn-on delay time ---- 42 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 27 ---- ns i c = 17a, v cc = 480v t d(off) turn-off delay time ---- 310 ---- v ge = 15v, r g = 23 w t f fall time ---- 310 ---- energy losses include "tail" and e ts total switching loss ---- 3.2 ---- mj diode reverse recovery. l e internal emitter inductance ---- 7.5 ---- nh measured 5mm from package c ies input capacitance ---- 1100 ---- v ge = 0v c oes output capacitance ---- 74 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 14 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 42 60 ns t j = 25c see fig. ---- 80 120 t j = 125c 14 i f = 12a i rr diode peak reverse recovery current ---- 3.5 6.0 a t j = 25c see fig. ---- 5.6 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 80 180 nc t j = 25c see fig. ---- 220 600 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ---- 180 ---- a/s t j = 25c see fig. during t b ---- 120 ---- t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 ---- ---- v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 0.69 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 1.59 1.8 i c = 17a v ge = 15v ---- 1.99 ---- v i c = 31a see fig. 2, 5 ---- 1.70 ---- i c = 17a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -11 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 6.1 10 ---- s v ce = 100v, i c = 17a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.4 1.7 v i c = 12a see fig. 13 ---- 1.3 1.6 i c = 12a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4BC30FD www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics load current ( a ) 1 10 100 1000 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter volta g e ( v ) t = 150c t = 25c j j v = 15v 20s pulse width ge a 1 10 100 1000 5 6 7 8 9 10 11 12 13 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter volta g e ( v ) a v = 50v 5s pulse width cc 0 4 8 12 16 20 0.1 1 10 100 f, fre q uenc y ( khz ) a 6 0% of rated voltage i duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 21w
IRG4BC30FD 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature ( c ) j i = 8.5a i = 17a i = 34a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin g le pulse (thermal response) therm al r esponse (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c 0 10 20 30 40 25 50 75 100 125 150 maximum dc collector current (a) t , case tem perature (c) c v = 15v ge
IRG4BC30FD www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature total switchig losses (mj) 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 a t , junction temperature ( c ) j i = 8.5a i = 17a i = 34a r = 23 w v = 15v v = 480v g ge cc c c c total switchig losses (mj) 1.80 1.90 2.00 2.10 2.20 0 20406080 a r , gate resistance ( w ) g v = 480v v = 15v t = 25c i = 17a cc ge j c 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter volta g e ( v ) a c ies c res c oes v ge = 0v f = 1 mhz cies = cge + cgc + cce shorted cres = cce coes = cce + cgc 0 4 8 12 16 20 0 102030405060 ge v , gate-to-emitter voltage (v) g q , total gate char g e ( nc ) a v = 400v i = 17a ce c
IRG4BC30FD 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current total switchig losses (mj) 0.0 2.0 4.0 6.0 8.0 0 10203040 c i , collector-to-emitter current ( a ) a r = 23 w t = 150c v = 480v v = 15v g j cc ge 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-e m itter v oltage (v ) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j
IRG4BC30FD www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 200 400 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 0 40 80 120 160 100 1000 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j
IRG4BC30FD 8 www.irf.com fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +v g 10% +v g 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same t y pe device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4BC30FD www.irf.com 9 v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4BC30FD 10 www.irf.com notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80 %( v ces ), v ge =20v, l=10h, r g = 23 w (figure 19) ? pulse width 80s; duty factor 0.1% . ? pulse width 5.0s, single shot. case outline ? to-220ab 0.55 (.022) 0.46 (.018) 3 x 2.92 (.115) 2.64 (.104) 1.32 (.052) 1.22 (.048) - b - 4.69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - a - 6.47 (.255) 6.10 (.240) 1.15 (.045) min 4.06 (.160) 3.55 (.140) 3 x 3.96 (.160) 3.55 (.140) 3 x 0.93 (.037) 0.69 (.027) 0.36 (.014) m b a m 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 3 x 2.54 (.100) 2x 1 2 3 4 conforms to jedec outline to-220ab dim ensions in millim eters and (inches) lead assignments 1 - g ate 2 - co llect o r 3 - em itt er 4 - co llect o r notes: 1 dimensions & tolerancing per ansi y14.5m , 1982. 2 controlling dimension : inch. 3 dim ension s are sh o w n m illim et er s (in ches). 4 conforms to jedec outline to -220ab. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 12/98
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