characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5508 rev d 5-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 300 48 0.070 25 250 100 24 apt30m70bvr_svr 300 48 192 30 40 370 2.96 -55 to 150 300 48 30 1300 apt30m70bvr apt30m70svr 300v 48a 0.070 ? ? ? ? ? g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? 100% avalanche tested ? lower leakage ? to-247 or surface mount d 3 pak package power mos v ? d 3 pak caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247
symbol i s i sm v sd t rr q rr dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6 ? min typ max 4890 5870 882 1235 277 415 152 225 35 52 66 99 14 28 21 42 57 85 10 20 unit pf nc ns apt30m70bvr_svr characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5508 rev d 5-2003 characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/s) source-drain diode ratings and characteristics unit amps volts ns c min typ max 48 192 1.3 440 5.8 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 1.13mh, r g = 25 ? , peak i l = 48a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.34 40 unit c/w characteristic junction to case junction to ambient z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.4 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 30 60 90 120 150 0 2 4 6 8 10 02468 020406080100 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt30m70bvr_svr i d = 0.5 i d [cont.] v gs = 10v 100 80 60 40 20 0 1.3 1.2 1.1 1.0 0.9 1.20 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 80 60 40 20 0 100 80 60 40 20 0 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 050-5508 rev d 5-2003 v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c v gs =7v, 10v & 15v 5.5v 4.5v 5v 4v 5.5v 4.5v 5v 4v v gs =15v 6v v gs =10v v gs =7v 6v
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 300 .01 .1 1 10 50 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2.0 apt30m70bvr_svr t c =+25c t j =+150c single pulse 200 100 50 10 5 1 .5 .1 20 16 12 8 4 0 i d = i d [cont.] 15,000 10,000 5,000 1,000 500 100 200 100 50 10 5 1 .5 .1 050-5508 rev d 5-2003 operation here limited by r ds (on) c rss c oss c iss v ds =150v v ds =240v v ds =60v t j =+150c t j =+25c 10s 1ms 10ms 100ms dc 100s apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline
|
