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?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c january 2012 motion-spm tm FPAM50LH60 smart power module for 2-phase interleaved pfc features ? single phase rectifier for ac input ? 2-phase interleaved pfc ? control ic for gate driving and protection ? built-in ntc thermistor for monitoring over-temperature ? low thermal resistance due to dbc substrate ? isolation lating of 2500v rms /min ? ul certified no.e209024 applications system air conditioner general description FPAM50LH60 is an advanced smart power module of 2-phase interleaved pfc(power factor correction). it combines optimized drive circuit with low-loss igbts and using dbc which has low thermal resistance. system reliability is further enhanced by the integrated under-voltage lock-out, over-current protection, and built-in ntc thermistor for monitoring over- temperature. figure 1.
2 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c i ntegrated d rive , p rotection and s ystem c ontrol f unctions ? for igbts : gate drive circuit, over current protection(sc), control supply circuit under-voltage(u v) protection ? fault signal : corresponding to sc and uv fault ? built-in thermistor: over-temperature monitoring ? input interface : 3.3/5v cmos/lsttl compatible pin configuration figure 2. top view case temperature(t c ) detecting point (1)c sc (2)com (3)v fo (4)in x (5)in y (6)com (7)n.c. (8)v cc (9)v cc (10)com (11)r th (12)v th (13)n r (14)n r (15)n.c. (16)n.c. (17)n.c. (18)r (19)r (20)n.c. (21)n.c. (22)s (23)s (32)p r (31)n p (30)y (29)x (28)p x (27)n.c. (26)p y (24)p (25)p dimension unit: millimeter
3 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c pin descriptions internal equivalent circuit figure 3. internal block diagram pin number pin name pin description 1 c sc signal input for over current detection 2,6,10 com common supply ground 3 v fo fault out 4 in x pwm input for x igbt drive 5 in y pwm input for y igbt drive 7 n.c. 8,9 v cc common supply voltage of ic for igbt drive 11 r th thermister 12 v th thermister 13,14 n r negative dc-link of rectifier diode 15,16,17 n.c. 18,19 r ac input for r phase 20,21 n.c. 22,23 s ac input for s phase 24,25 p output of diode 26 p y input of diode 27 n.c. 28 p x input of diode 29 x output of x phase igbt 30 y output of y phase igbt 31 n p negative dc-link of igbt 32 p r positive dc-link of rectifier diode csc vfo iny com vcc out x ( 1 ) c sc ( 2 )( 6 )( 10 ) com ( 24 )( 25 ) p ( 22 )( 23 ) s ( 32 ) p r out y inx ( 8 )( 9 ) v cc ( 3 ) v fo ( 4 ) in x ( 5 ) in y ( 31 ) n p ( 30 ) y ( 29 ) x ( 18 )( 19 ) r ( 13 )( 14 ) n r ( 11 ) r th ( 12 ) v th thermistor ( 26 ) p y ( 28 ) p x
4 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c absolute maximum ratings (t j = 25c, unless otherwise specified) converter part note: 1. the maximum junction temperature rating of the power chips integrated within the spm is 125c. 2. marking * is calculation value or design factor. control part total system thermal resistance symbol parameter conditions rating units v i input supply voltage applied between r-s 264 v rms v pn output voltage applied between x-n p ,y-n p , p-p x , p-p y 450 v v pn(surge) output supply voltage (surge) applied between x-n p ,y-n p , p-p x , p-p y 500 v v ces collector-emitter voltage breakdown voltage between x-n p ,y-n p 600 v v rrm repetitive peak reverse voltage of frd breakdown voltage between p-p x , p-p y 600 v v rrmr repetitive peak reverse voltage of rec- tifier breakdown voltage between p r -r, p r -s, r-n r , s-n r 900 v *i f frd forward current t c = 25c, t j < 125c 50 a *i fsm peak surge current of frd non-repetitive, 60hz single half-sine wave 500 a *i fr rectified forward current t c = 25c, t j < 125c 50 a *i fsmr peak surge current of rectifier non-repetitive, 60hz single half-sine wave 500 a *i c each igbt collector current t c = 25c, t j < 125c 50 a *i cp each igbt collector current(peak) t c = 25c, t j < 125c, under 1ms pulse width 100 a *p c collector dissipation t c =25c per single igbt 135 w t j operating junction temperature (note 1) -40~125 c symbol parameter conditions rating units v cc control supply voltage applied between v cc - com 20 v v in input signal voltage applied between in x , in y - com -0.3 ~ v cc +0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc +0.3 v i fo fault output current sink current at v fo pin 1 ma v sc current sensing input voltage applied between c sc - com -0.3 ~ v cc +0.3 v symbol parameter conditions rating units t stg storage temperature -40 ~ 125 c v iso isolation voltage 60hz, sinusoidal, ac 1 minute, connection pins to heat sink plate 2500 v rms symbol parameter condition min. typ. max. units r th(j-c)q junction to case thermal resistance each igbt under operating condition - - 0.74 c/w r th(j-c)d each diode under operating condition - - 1.13 c/w r th(j-c)r each rectifier under operating condition - - 0.74 c/w
5 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c electrical characteristics (t j = 25c, unless otherwise specified) converter part note: 3. t on and t off include the propagation delay time of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. control part note: 4. t th is the temperature of thermister itself. to know case temperature ( t c ), please make the experiment considering your application. symbol parameter conditions min. typ. max. units v ce(sat) igbt saturation voltage v cc = 15v, v in = 5v, i c = 50a - 1.7 2.2 v v ff frd forward voltage i f = 50a - 1.9 2.4 v v fr rectifier forward voltage i fr = 50a - 1.13 1.35 v i rr switching characteristic v pn = 400v, v cc = 15v, i c = 25a, v in = 0v ? 5v, inductive load (note 3), per single igbt - 27 - a t rr - 45 - ns t on - 772 - ns t off - 1117 - ns t c(on) - 110 - ns t c(off) - 125 - ns i ces collector-emitter leakage current v ces =600v - - 250 m a symbol parameter conditions min. typ. max. units i qcc quiescent v cc supply current v cc = 15v, in x , in y - com = 0v, supply current between v cc and com - - 2.65 ma i pcc operating v cc supply current v cc = 15v, f pwm = 20khz, duty=50%, applied to one pwm signal input per single igbt, supply current between v cc and com - - 7.0 ma v foh fault output voltage v sc = 0v, v fo circuit: 10k w to 5v pull-up 4.5 - - v v fol v sc = 1v, v fo circuit: 10k w to 5v pull-up - - 0.5 v v sc(ref) over-current protection trip level voltage of csc pin v cc = 15v 0.45 0.5 0.55 v uv ccd supply circuit under- voltage protection detection level 10.5 - 13.0 v uv ccr reset level 11.0 - 13.5 v t fod fault-out pulse width 30 - - m s v in(on) on threshold voltage applied between in x , in y - com 2.6 - - v v in(off) off threshold voltage applied between in x , in y - com - - 0.8 v r th resistance of thermistor @ t th = 25c (figure 5)(note 4) - 47 - k w @ t th = 100c (figure 5)(note 4) - 2.9 - k w
6 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c . figure 4. switching time definition figure 5. r-t curve of the built-in thermistor v ce i c v in t on t c ( on ) 10 % i c 10 % v ce 90 % i c t off t c ( off ) 10 % v ce 10 % i c ( a ) turn - on ( b ) turn - off i rr t rr 100 % i c 100 % i c 0 25 50 75 100 125 0 50 100 150 200 r-t curve resistance r th [ k ? ] temperature t th [degc] 95 100 105 110 115 120 125 1 2 3 4 resistance r th [ k ? ] temperature t th [degc]
7 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c recommended operating conditions (t j = 25c, unless otherwise specified) mechanical characteristics and ratings figure 6. flatness measurement position package marking and ordering information symbol parameter conditions value units min. typ. max. v i input supply voltage applied between r - s 187 - 253 v rms i i input current t c <90c, v i =220v, v o =360v, f pwm =20khz per each igbt - - 35 a rms v pn supply voltage applied between x-n p , y-n p , p-p x , p-p y - - 400 v v cc control supply voltage applied between v cc - com 13.5 15 16.5 v dv cc /dt supply variation -1 - 1 v/ m s i fo fault output current sink current at v fo pin - - 1 ma f pwm pwm input frequency -40cFPAM50LH60 FPAM50LH60 spm32-ea - - 8
8 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c time charts of protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operate when the next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 7. under-voltage protection (with the external over current detection circuit) c1 : normal operation: igbt on and carrying current. c2 : over current detection (oc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : fault output timer operation starts. c6 : input l : igbt off state. c7 : input h: igbt on state, but during the active period of fault output the igbt doesnt turn on. c8 : igbt off state figure 8. over current protection internal igbt gate - emitter voltage input voltage ( v in ) output current fault output signal oc input signal to csc pin for protection set reset c 6 c 7 c 3 c 2 c 1 c 8 c 4 c 5 input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7
9 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c note: 1. to avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3cm) 2. v fo output is open drain type. this signal line should be pulled up to the positive side of the mcu or control power supply with a resistor that makes i fo up to 1ma. 3. input signal is high-active type. there is a 5k resistor inside the ic to pull down each input signal line to gnd. rc coupling circuits is recommand ed for the prevention of input signal oscillation. r f c f constant should be selected in the range 50~150ns . ( recommended r f =100 , c f =1nf) 4. to prevent error of the protection function, the wiring related with r scf and c scf should be as short as possible. 5. in the over current protection circuit, please select the r scf , c scf time constant in the range 1.5~2 s. 6. each capacitors should be mounted as close to the spm pins as possible. 7. relays are used at almost every systems of electrical equipments of home appliances. in these ca ses, there should be suffici ent distance between the cpu and the relays. 8. internal ntc thermistor can be used for monitoring of the case temperature and protecting the de vice from the overheating op eration. select an appropriate resistor r t according to the application. 9. it is recommended that anti-parallel diode ( d x , d y ) be connected with each igbt. figure 9. typical application circuit c o n t r o l l e r + 5 v + 15 v + 5 v input signal for over current protection c scf r scf v dc r fo l l csc vfo iny vcc com out x p s p r out y inx n p x y r p x p y n r r th v th thermistor current sensing v ac d y d x r f r f c f c f r t
10 www.fairchildsemi.com FPAM50LH60 rev. c f p a m 5 0 l h 6 0 s m a r t p o w e r m o d u l e f o r 2 - p h a s e i n t e r l e a v e d p f c detailed package outline drawings dimension unit: millimeter
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