x,ku-band internally matched fet features ? high output power: p1db=42.0dbm(typ.) ? high gain: g1db=7.0db(typ.) ? high pae: add=31%(typ.) ? broad band: 10.7~11.7ghz ? impedance matched zin/zout = 50 ? ? hermetically sealed package edition 1.2 september 2004 1 FLM1011-15F note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) description the FLM1011-15F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ? system. esd class iii 2000v ~ case style: ib g.c.p.:gain compression point, s.c.l.:single carrier level electrical character istics (case temperature tc=25 c) power gain at 1db g.c.p. limit item symbol test conditions unit drain current output power at 1db g.c.p. gain flatness i dss p 1db ? g a v db dbm min. typ. max. drain current i dsr ms v a - 4500 - -0.5 -1.5 -3.0 -5.0 - - 41.0 42.0 - 6.0 7.0 - - 4.0 5.0 v ds =10v f=10.7 - 11.7 ghz i ds =0.5idss (typ) zs=z l =50 ? power-added efficiency add % - 31 - --1.2 - 7.2 10.8 v ds =5v, v gs =0v transconductance g m v ds =5v, i ds =4.55a pinch-off voltage v p v ds =5v, i ds =300ma gate-source breakdown voltage v gso i gs =-300ua g 1db db thermal resistance r th channel to case - 2.3 2.6 o c/w channel temperature rise ? t ch 10v x idsr x rth - - 100 o c 3rd order intermodulation distortion im 3 -42 -45 - dbc f=11.7ghz, ? f=10mhz, 2-tone test pout=30.0dbm s.c.l. absolute maximum ratings (case temperature tc=25 c) item symbol rating unit drain-source voltage gate-source voltage total power dissipation storage temperature v ds v gs p t t stg 15 -5 57.7 -65 to +175 v v w channel temperature t ch 175 o c o c recommended operating condition (case temperature tc=25 c) item symbol condition unit dc input voltage v ds 10 16.7 v ma limit r g =50 ? r g =50 ? -3.62 ma forward gate current i gf reverse gate current i gr
vds=10v, ids=0.5idss 32 34 36 38 40 42 44 10.5 10.7 10.9 11.1 11.3 11.5 11.7 11.9 frequency [ghz] output power [dbm] FLM1011-15F x,ku-band internally matched fet 2 pin=26dbm pin=30dbm pin=34dbm pin=36dbm p1db output power v.s. frequency imd v.s. output power (s.c.l.) 0 10 20 30 40 50 60 0 50 100 150 200 case temperature [ c] total power dissipation [w] power derating curve o output power , power added efficiency v.s. input power vds=10v, ids=0.5idss freq=11.2ghz input power [dbm] power added efficiency [%] output power [dbm] 22 38 30 32 34 36 38 40 42 44 22 24 26 28 30 32 34 36 38 0 10 20 30 40 50 60 70 pout pae -64 -60 -56 -52 -48 -44 -40 25 26 27 28 29 30 31 32 33 34 output power (s.c.l.) [dbm] intermodulation distortion [dbc] im3 im5 vds=10v, ids=3.6a f1=11.70ghz, f2=11.71ghz, 2-tone test
FLM1011-15F x,ku-band internally matched fet 3 s-parameters vds=10v , ids=0.5idss s11 s22 10.7 25 ? 11.1 10.9 11.3 10? 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 50 ? 11.7 11.5 11.9 11.7 11.5 10.7 11.1 10.9 11.3 10.5 10.5 11.9 s21 s12 0.6 6 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 11.7 11.5 11.9 10.7 11.1 10.9 11.3 10.5 11.7 11.5 11.9 10.7 11.1 10.9 11.3 10.5 freq. (g h z ) m a g a n g m a g a n g m a g a n g m a g a n g 10. 50. 580 62. 42. 199 163. 70. 061 143. 20. 438 -10. 3 10. 60. 543 51. 52. 241 152. 60. 067 131. 70. 439 -21. 9 10. 70. 505 39. 92. 289 142. 10. 072 121. 50. 442 -33. 2 10. 80. 465 26. 82. 328 131. 00. 078 109. 70. 446 -44. 2 10. 90. 428 11. 92. 380 119. 80. 084 98. 90. 440 -54. 3 11. 00. 389 -5. 22. 419 108. 30. 089 87. 50. 426 -64. 2 11. 10. 359 -23. 92. 453 96. 20. 092 75. 70. 406 -73. 5 11. 20. 334 -45. 52. 476 84. 40. 095 64. 10. 378 -81. 8 11. 30. 325 -67. 62. 472 72. 10. 097 51. 70. 342 -88. 4 11. 40. 325 -90. 92. 466 59. 60. 099 40. 70. 298 -93. 3 11. 50. 338 -113. 12. 446 47. 20. 100 28. 00. 250 -95. 3 11. 60. 359 -134. 22. 403 34. 30. 100 16. 90. 201 -95. 0 11. 70. 383 -154. 12. 367 21. 80. 099 6. 50. 158 -88. 3 11. 80. 415 -172. 62. 312 9. 10. 096 -4. 40. 128 -74. 1 11. 90. 445 169. 32. 243 -4. 30. 095 -15. 80. 121 -52. 5 s 1 1 s 2 1 s 1 2 s 2 2
x,ku-band internally matched fet 4 FLM1011-15F package out line unit : mm pin assignment 1 : gate 2 : source 3 : drain 4 : source case style : ib
FLM1011-15F x,ku-band internally matched fet 5 for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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