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  hf/vhf applications rf & microwave transistors .380 4lfl (m113) epoxy sealed . 50 mhz . 12.5 volts . efficiency 55% . common emitter . gold metallization . p out = 70 w min. with 10 db gain description the SD1446 is a 12.5 v class c epitaxial silicon npn planar transistor designed primarily for land mobile transmitter applications. this device utilizes emitter ballasting and is extremely stable and ca- pable of withstanding high vswr under operating conditions. pin connection branding SD1446 order code SD1446 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 36 v v ceo collector-emitter voltage 18 v v ebo emitter-base voltage 3.5 v i c device current 12.0 a p diss power dissipation 183 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 1.05 c/w SD1446 1. collector 3. base 2. emitter 4. emitter thermal data november 1992 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 50 mhz p in = 7 w v ce = 12.5 v 70 w g p f = 50 mhz p in = 7 w v ce = 12.5 v 10 db h cf = 50 mhz p in = 7 w v ce = 12.5 v 55 % c ob f = 1 mhz v cb = 12.5v 300 pf static symbol test conditions value unit min. typ. max. bv cbo i c = 50ma i e = 0ma 36 v bv ces i c = 100ma v be = 0v 36 v bv ceo i c = 50ma i b = 0ma 18 v bv ebo i e = 10ma i c = 0ma 3.5 v i ces v ce = 15v i e = 0ma 10 ma h fe v ce = 5v i c = 5a 10 dynamic typical performance power output vs power input SD1446 2/5
typical input impedance typical collector load impedance impedance data freq. z in ( w )z cl ( w ) 50 mhz 0.8 + j 0.9 1.2 + j 0.6 p out = 70w v ce = 12.5v SD1446 3/5
test circuit c1, c4 : 50 - 380pf arco 465 c2 : 110 - 580pf arco 467 c3 : 140 - 680pf arco 468 c5 : 9 - 180pf arco 463 c6 : 10 m f, 35vdc, electrolytic c7 : .01 m f erie c8 : 1000pf unelco l1 : 2 1/2 turns, #14 awg, tinned, 1/4" i.d. loose wound l2 : 10 turns, #28 awg, enameled on ferroxcube sleeve #3b l3 : 1 1/2 turns, #12 awg, tinned, 3/8" i.d. loose wound l4 : 8 turns, #18 awg on 1/4" i.d. coil form 1/2" length with ferrite slug l5 : 11 turns, #16 awg, enameled on torroid, micrometals, t50-2 board material: double sided copper 1/16" thick SD1446 4/5
package mechanical data ref.: dwg. no.12-0113 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1446 5/5


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