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savantic semiconductor product specification silicon npn power transistors 2SD2399 description with to-220f package complement to type 2sb1568 high dc current gain. darlington applications for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cm collector current-peak single pulse 6 a t c =25 30 p c collector dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2399 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =50a; i e =0 80 v v (br)ceo collector-emitter breakdown voltage i c =1ma; i b =0 80 v v cesat collector-emitter saturation voltage i c =2a ; i b =4ma 1.5 v i cbo collector cut-off current v cb =80v;i e =0 0.1 ma i ebo emitter cut-off current v eb =5v;i c =0 3.0 ma h fe dc current gain i c =2a ; v ce =3v 1000 10000 c ob output capacitance i e =0 ; v cb =10v; f=1mhz 35 pf f t transition frequency i e =-0.2a ; v ce =5v;f=10mhz 40 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SD2399 package outline fig.2 outline dimensions

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