SI9433DY vishay siliconix document number: 70125 s-00652erev. j, 27-mar-00 www.vishay.com faxback 408-970-5600 1 p-channel 20-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 20 0.045 @ v gs = 4.5 v 5.4 20 0.070 @ v gs = 2.7 v 4.2 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 sss g d d d d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 5.4 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.4 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 2.6 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI9433DY vishay siliconix www.vishay.com faxback 408-970-5600 2 document number: 70125 s-00652erev. j, 27-mar-00
parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 10 v, v gs = 0 v, t j = 70 c 5 a on - state drain current b i d(on) v ds 5 v, v gs = 4.5 v 20 a on - state drain current b i d(on) v ds 5 v, v gs = 2.7 v 5 a drain - source on - state resistance b r ds(on) v gs = 4.5 v, i d = 5.1 a 0.032 0.045 drain - source on - state resistance b r ds(on) v gs = 2.7 v, i d = 2.0 a 0.052 0.070 forward transconductance b g fs v ds = 9 v, i d = 5.1 a 15 s diode forward voltage b v sd i s = 2.6 a, v gs = 0 v 0.76 1.2 v dynamic a total gate charge q g v 6v v 45v i 51a 20 60 c gate-source charge q gs v ds = 6 v, v gs = 4.5 v, i d = 5.1 a 4 nc gate-drain charge q gd 7 turn-on delay time t d(on) v6vr6 34 60 rise time t r v dd = 6 v, r l = 6 i1av 45vr6 70 100 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 76 180 ns fall time t f 61 100 source-drain reverse recovery time t rr i f = 2.6, di/dt = 100 a/ s 60 80 notes a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI9433DY vishay siliconix document number: 70125 s-00652erev. j, 27-mar-00 www.vishay.com faxback 408-970-5600 3
output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) 0 4 8 12 16 20 0246810 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 03691215 0 1000 2000 3000 4000 0246810 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 55 c v gs = 2.7 v c rss c oss c iss 2.5 v v gs = 4.5 v t c = 125 c v ds = 6 v i d = 5.1 a v gs = 4.5 v i d = 5.1 a v gs = 5, 4.5, 4, 3.5, 3 v 25 c 2 v
SI9433DY vishay siliconix www.vishay.com faxback 408-970-5600 4 document number: 70125 s-00652erev. j, 27-mar-00
0 0.04 0.08 0.12 0.16 0.20 0246810 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 10 20 30 40 50 60 70 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 t j = 150 c 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 i d = 5.1 a i d = 250 m a 0.01 0.1 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 11030 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm variance (v) v gs(th) 10 1 t j = 25 c
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