inchange semiconductor product specification silicon npn power transistors 2SD1649 description ? ? with to-3pml package ? built-in damper diode ? high voltage ,high speed applications ? for color tv horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 2.5 a i cm collector current-peak 10 a p c collector power dissipation 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1649 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200ma , i c =0 7 v v (br)ceo collector-emitter breakdown voltage i c =0.1a; r be = ?t 800 v v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 1500 v v cesat collector-emitter saturation voltage i c =2a; i b =0.6a 8.0 v v besat base-emitter saturation voltage i c =2a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 | a i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma h fe dc current gain i c =0.5a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v 3 mhz v f diode forward voltage i f =2.5a 2.0 v t f fall time i c =2a;i b1 =0.6a;i b2 =-1.2a v cc =200v;r l =100 |? 0.4 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1649 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
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