 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry principal device types cedm8004 cmlm0584 cmldm7484 gross die per 6 inch wafer 95,400 process CP794R small signal mosfet transistor p - channel enhancement-mode transistor chip die size 15.7 x 15.7 mils die thickness 3.9 mils gate bonding pad area 3.9 x 3.9 mils source bonding pad area 9.1 x 8.1 mils top side metalization al-si - 35,000? back side metalization au - 12,000? process details www.centralsemi.com r0 (29-july 2010)
process CP794R typical electrical characteristics www.centralsemi.com r0 (29-july 2010) |
Price & Availability of CP794R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |