unisonic technologies co., ltd UTT75N75 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-691.a 80a, 75v n-channel power mosfet ? description the utc UTT75N75 is n-channel enhancement mode power field effect transistors with stabl e off-state characteristics including fast switching speed and low therma l resistance. it is usually used in the telecom and computer applications. ? features * r ds(on) = 10m ? @ v gs = 10 v * ultra low gate charge ( typical 117 nc ) * fast switching capability * low reverse transfer capacitance (c rss = typical 240 pf ) * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 2.drain 3.source to-220 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT75N75l-ta3-t UTT75N75g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UTT75N75 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-691.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 75 v gate-source voltage v gss 20 v drain current continuous (t c = 25c) i d 80 a pulsed (note 2) i dm 320 a single pulsed avalanche energy (note 3) e as 700 mj power dissipation p d 300 w junction temperature t j +150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by safe operating area 3. starting t j =25c, i d =40a, v dd =37.5v 4. i sd 80a, di/dt 300a/s, v dd bv dss , t j t jmax ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.5 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 75 v drain-source leakage current i dss v ds = 75 v, v gs = 0 v 1 a gate-source leakage current forward i gss v gs = 20v, v ds = 0 v 100 na reverse v gs = -20v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 1.4 3.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 40 a 10 30 m ? dynamic characteristics input capacitance c iss v gs = 0v, v ds = 25v f = 1mhz 3700 pf output capacitance c oss 730 pf reverse transfer capacitance c rss 240 pf switching characteristics turn-on delay time t d ( on ) v dd = 37.5v, i d =45a, v gs =10v, r g =4.7 ? 25 ns turn-on rise time t r 100 ns turn-off delay time t d ( off ) 66 ns turn-off fall time t f 30 ns total gate charge q g v ds = 60v, v gs = 10v i d = 80a 117 160 nc gate-source charge q gs 27 nc gate-drain charge q gd 47 nc source-drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd v gs = 0v, i s = 80a 1.5 v continuous source current i s 80 a pulsed source current (note 1) i sm 320 a notes: 1. pulse width limited by safe operating area 2. pulsed: pulse duration=300s, duty cycle 1.5%
UTT75N75 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-691.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
UTT75N75 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-691.a ? test circuits and waveforms(cont.) v gs d.u.t. r g v gs v ds pulse width 1 s duty factor 0.1% v dd r l v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms v d charge q gs q gd q g v gs gate charge test circuit gate charge waveform d.u.t. v gs v ds t p i as driver l v dd 0.01 ? r g v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
UTT75N75 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-691.a ? typical characteristics drain current vs. drain-source breakdown voltage 0 0 50 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 60 250 20 100 150 200 300 40 80 100 350 400 450 0.5 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 250 100 150 200 300 1 4.0 2.0 1.5 2.5 3.0 3.5 150 0 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (mv) 100 50 1 200 0.2 0 0 drain current vs. source to drain voltage drain current, i d (a) source to drain voltage, v sd (v) 0.8 0.4 0.6 2 4 6 8 10 12 1.0 2 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 v gs =10v i d =20a v gs =10v i d =1a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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