AOT15B60D 600v, 15a alpha igbt tm with diode general description product summary v ce i c (t c =100c) 15a v ce(sat) (t c =25c) 1.6v 100% e on /e off tested 100% q rr tested 100% short circuit current tested* symbol the alpha igbt tm line of products offers best-in-class performance in conduction and switching losses, wit h robust short circuit capability. they are designed for ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations. the soft co- package diode is targeted for minimal losses in mot or control applications. units parameter absolute maximum ratings t a =25c unless otherwise noted AOT15B60D 600v g c e top view AOT15B60D to-220 g c e symbol v ce v ge i cm i lm diode pulsed current, limited by t jmax i fm t sc t j , t stg t l symbol r q ja r q jc r q jc * v ce equal to 50v continuous diode forward current t c =25c i f 30 a t c =100c continuous collector current t c =25c 15 30 15 i c turn off soa, v ce 600v, limited by t jmax pulsed collector current, limited by t jmax gate-emitter voltage t c =100c w units a a parameter 20 v 60 a a 60 c/w 65 83.3 c 60 AOT15B60D maximum junction-to-ambient 10 m s t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d short circuit withstanding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =150c junction and storage temperature range t c =25c thermal characteristics 300 -55 to 175 167 v units parameter AOT15B60D collector-emitter voltage 600 c/w 1.5 maximum diode junction-to-case c/w 0.9 maximum igbt junction-to-case g c e top view AOT15B60D to-220 g c e rev1: nov 2012 www.aosmd.com page 1 of 9
AOT15B60D symbol min typ max units bv ces collector-emitter breakdown voltage 600 - - v t j =25c - 1.6 1.8 t j =125c - 1.85 - t j =175c - 1.99 - t j =25c - 1.43 1.72 t j =125c - 1.39 - t j =175c - 1.32 - v ge(th) gate-emitter threshold voltage - 5.8 - v t j =25c - - 10 t j =125c - - 300 t j =175c - - 3000 i ges gate-emitter leakage current - - 100 na g fs - 7.7 - s c ies - 1290 - pf c oes - 97 - pf c res - 3.1 - pf q g - 25.4 - nc q ge - 9.5 - nc q gc - 8.3 - nc i c(sc) - 74 - a r g - 2.4 - w t d(on) - 21 - ns t r - 19 - ns turn-on rise time turn-on delaytime t j =25c gate to collector charge gate to emitter charge v ge =15v, v ce =480v, i c =15a switching parameters, (load inductive, t j =25c) short circuit collector current, max. 1000 short circuits, delay between short circuits 1.0s v ge =15v, v ce =400v, r g =20 w total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =15a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =15a v v ce =600v, v ge =0v v ge =0v, i c =15a v collector-emitter saturation voltage output capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters m a v ce =v ge , i c =1ma t r - 19 - ns t d(off) - 73 - ns t f - 10 - ns e on - 0.42 - mj e off - 0.11 - mj e total - 0.53 - mj t rr - 196 - ns q rr - 0.48 - m c i rm - 5.8 - a t d(on) - 19 - ns t r - 19 - ns t d(off) - 95 - ns t f - 10 - ns e on - 0.58 - mj e off - 0.2 - mj e total - 0.78 - mj t rr - 235 - ns q rr - 1.1 - m c i rm - 8.5 - a this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. t j =175c i f =15a,di/dt=200a/ m s,v ce =400v diode reverse recovery charge diode peak reverse recovery current turn-on delaytime t j =175c v ge =15v, v ce =400v, i c =15a, r g =20 w, parasitic inductance =100 nh turn-on rise time turn-off delay time turn-off fall time turn-on energy diode reverse recovery time turn-off energy total switching energy turn-off energy turn-on rise time switching parameters, (load inductive, t j =175c) diode reverse recovery time diode reverse recovery charge diode peak reverse recovery current t j =25c i f =15a,di/dt=200a/ m s,v ce =400v turn-off delay time t j =25c v ge =15v, v ce =400v, i c =15a, r g =20 w, parasitic i nductance=100nh total switching energy turn-off fall time turn-on energy rev1: nov 2012 www.aosmd.com page 2 of 9
AOT15B60D typical electrical and thermal characteristics 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v f (v) fig 4 : diode characteristic 25 c 175 c -40 c 0 20 40 60 80 100 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25c ) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 10 20 30 40 50 60 70 4 7 10 13 16 i c (a) v ge (v) fig 3 : transfer characteristic 175 c 25 c -40 c v ce =20v 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =175c ) v ge =7v 9v 20v 17 v 15v 11v 13v 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v f (v) fig 4: diode characteristic 25 c 175 c -40 c 0 20 40 60 80 100 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25c ) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 10 20 30 40 50 60 70 4 7 10 13 16 i c (a) v ge (v) fig 3: transfer characteristic 175 c 25 c -40 c 0 1 2 3 4 0 25 50 75 100 125 150 175 200 v ce(sat) (v) temperature (c) fig 5: collector-emitter saturation voltage vs. junction temperature i c =30a i c =7.5a i c =15a 0 20 40 60 80 100 0 10 20 30 40 50 5 8 11 14 17 20 current(a) time ( m mm m s) v ge (v) fig 6: v ge vs. short circuit time (v ce =400v,t c =25c ) v ce =20v 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =175c ) v ge =7v 9v 20v 17 v 15v 11v 13v rev1: nov 2012 www.aosmd.com page 3 of 9
AOT15B60D typical electrical and thermal characteristics 1 10 100 10 100 1,000 i c (a) v ce (v) fig 10 : reverse bias soa 0 3 6 9 12 15 0 5 10 15 20 25 30 i c (a) q g (nc) fig 7: gate-charge characteristics v ce =480v i c =15a 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8: capacitance characteristic c ies c res c oes 1 10 100 10 100 1,000 i c (a) v ce (v) fig 10: reverse bias soa (t j =175c,v ge =15v) 0 3 6 9 12 15 0 5 10 15 20 25 30 i c (a) q g (nc) fig 7: gate-charge characteristics v ce =480v i c =15a 0 30 60 90 120 150 180 25 50 75 100 125 150 175 power disspation (w) t case (c) fig 11: power disspation as a function of case 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8: capacitance characteristic c ies c res c oes 0 5 10 15 20 25 30 25 50 75 100 125 150 175 current rating i c (a) t case (c) fig 12: current de-rating rev1: nov 2012 www.aosmd.com page 4 of 9
AOT15B60D typical electrical and thermal characteristics 1 10 100 1000 0 5 10 15 20 25 30 35 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =175c,v ge =15v,v ce =400v,r g =20 w ww w ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 50 100 150 200 250 switching time (ns) r g ( w ww w ) figure 14: switching time vs. r g (t j =175c,v ge =15v,v ce =400v,i c =15a) td(off) tf td(on) tr 1 10 100 1000 switching time (ns) td(off) tf td(on) tr 2 3 4 5 6 7 8 v ge(th) (v) 1 10 100 1000 0 5 10 15 20 25 30 35 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =175c,v ge =15v,v ce =400v,r g =20 w ww w ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 50 100 150 200 250 switching time (ns) r g ( w ww w ) figure 14: switching time vs. r g (t j =175c,v ge =15v,v ce =400v,i c =15a) td(off) tf td(on) tr 1 10 100 1000 0 50 100 150 200 switching time (ns) t j (c) figure 15: switching time vs.t j ( v ge =15v,v ce =400v,i c =15a,r g =20 w ww w ) td(off) tf td(on) tr 2 3 4 5 6 7 8 0 30 60 90 120 150 v ge(th) (v) t j (c) figure 16: v ge(th) vs. t j rev1: nov 2012 www.aosmd.com page 5 of 9
AOT15B60D typical electrical and thermal characteristics 0 0.4 0.8 1.2 1.6 2 0 5 10 15 20 25 30 35 switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =175c,v ge =15v,v ce =400v,r g =20 w ww w ) eoff eon etotal 0.0 0.3 0.6 0.9 1.2 1.5 0 50 100 150 200 250 switching energy (mj) r g ( w ww w ) figure 18: switching loss vs. r g (t j =175c,v ge =15v,v ce =400v,i c =15a) eoff eon etotal 0.2 0.4 0.6 0.8 1 switching energy (mj) eoff eon etotal 0.2 0.4 0.6 0.8 1.0 switching energ y (mj) eoff eon etotal 0 0.4 0.8 1.2 1.6 2 0 5 10 15 20 25 30 35 switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =175c,v ge =15v,v ce =400v,r g =20 w ww w ) eoff eon etotal 0.0 0.3 0.6 0.9 1.2 1.5 0 50 100 150 200 250 switching energy (mj) r g ( w ww w ) figure 18: switching loss vs. r g (t j =175c,v ge =15v,v ce =400v,i c =15a) eoff eon etotal 0 0.2 0.4 0.6 0.8 1 0 25 50 75 100 125 150 175 200 switching energy (mj) t j (c) figure 19: switching loss vs. t j (v ge =15v,v ce =400v,i c =15a,r g =20 w ww w ) eoff eon etotal 0.0 0.2 0.4 0.6 0.8 1.0 200 250 300 350 400 450 500 switching energ y (mj) v ce (v) figure 20: switching loss vs. v ce (t j =175c,v ge =15v,i c =15a,r g =20 w ww w ) eoff eon etotal rev1: nov 2012 www.aosmd.com page 6 of 9
AOT15B60D typical electrical and thermal characteristics 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 35 s t rr (ns) 175 c 25 c 175 c 25 c t rr s 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 35 i rm (a) q rr (nc) 25 c 175 c 175 c 25 c q rr i rm 13v 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 0 25 50 75 100 125 150 175 200 i ce(s) (a) temperature (c ) fig 21: diode reverse leakage current vs. junction temperature v ce =600v v ce =400v 0.2 0.6 1 1.4 1.8 0 25 50 75 100 125 150 175 200 v sd (v) temperature (c ) fig 22: diode forward voltage vs. junction temperature 15a 10 a 5a if=1a 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 35 s t rr (ns) i s (a) fig 24: diode reverse recovery time and softness factor vs. conduction current (v ge =15v,v ce =400v, di/dt=200a/ m mm m s) 175 c 25 c 175 c 25 c t rr s 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 35 i rm (a) q rr (nc) i f (a) fig 23: diode reverse recovery charge and peak current vs. conduction current (v ge =15v,v ce =400v, di/dt=200a/ m mm m s) 25 c 175 c 175 c 25 c q rr i rm 13v 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 0 25 50 75 100 125 150 175 200 i ce(s) (a) temperature (c ) fig 21: diode reverse leakage current vs. junction temperature v ce =600v v ce =400v 0.2 0.6 1 1.4 1.8 0 25 50 75 100 125 150 175 200 v sd (v) temperature (c ) fig 22: diode forward voltage vs. junction temperature 15a 10 a 5a if=1a 0 4 8 12 16 20 0 50 100 150 200 250 300 100 200 300 400 500 600 700 800 900 s t rr (ns) di/dt (a/ m mm m s) fig 26: diode reverse recovery time and softness factor vs. di/dt (v ge =15v,v ce =400v,i f =15a) 25 c 175 c 25 c 175 c t rr s 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400 1600 100 200 300 400 500 600 700 800 900 i rm (a) q rr (nc) di/dt (a/ m mm m s) fig 25: diode reverse recovery charge and peak current vs. di/dt (v ge =15v,v ce =400v,i f =15a) 175 c 25 c 175 c 25 c q rr i rm rev1: nov 2012 www.aosmd.com page 7 of 9
AOT15B60D typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 27: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.9 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1 e - 05 0 . 0001 0 . 001 0 . 01 0 . 1 1 10 z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 27: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.9 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 28: normalized maximum transient thermal imp edance for diode d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1: nov 2012 www.aosmd.com page 8 of 9
AOT15B60D rev1: nov 2012 www.aosmd.com page 9 of 9
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