sot-89-3l 1. base 2. collector 3. emitter features z low voltage z high current z complement to bsr43 aaplications z medium power transistor marking:br4 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -90 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-60v,i e =0 -100 na emitter cut-off current i ebo v eb =-5v,i c =0 -100 na h fe(1) * v ce =-5v, i c =0.1ma 30 h fe(2) * v ce =-5v, i c =-100ma 100 300 dc current gain h fe(3) * v ce =-5v, i c =-500ma 50 i c =-150ma,i b =-15ma -0.25 v collector-emitter saturation voltage v ce(sat) * i c =-500ma,i b =-50ma -0.5 v i c =-150ma,i b =-15ma -1 v base-emitter saturation voltage v be(sat) * i c =-500ma,i b =-50ma -1.2 v transition frequency f t v ce =-10v,i c =-50ma, f=100mhz 100 mhz *pulse test symbol parameter value unit v cbo collector-base voltage -90 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 brs33 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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