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http://www.luguang.cn email:lge@luguang.cn dimensions in inches and (millimeters) to-220ab bta04 t/d/s/a btb04 t/d/s/a sensitive gate triacs n very low i gt = 10ma max n low i h = 15ma max n bta family: insulating voltage = 2500v (rms) (ul recognized: e81734) features the bta/btb04 t/d/s/a triac family are high per- formance glass passivated pnpn devices. these parts are suitables for general purpose ap- plications where gate high sensitivity is required. application on 4q such as phase control and static switching. description symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 90c 4 a btb tc = 95c i tsm non repetitive surge peak on-state current (tj initial = 25c) tp = 8.3ms 42 a tp = 10ms 40 i 2 ti 2 t value tp = 10ms 8 a 2 s di/dt critical rate of rise of on-state current gate supply: i g = 50ma di g /dt = 0.1a/s repetitive f = 50hz 10 a/s non repetitive 50 tstg tj storage and operating junction temperature range -40 to +150 -40 to +110 c tl maximum lead soldering temperature during 10s at 4.5mm from case 260 c absolute ratings (limiting values) symbol parameter bta / btb04- unit 400 t/d/s/a 600 t/d/s/a 700 t/d/s/a v drm v rrm repetitive peak off-state voltage tj = 110c 400 600 700 v
http://www.luguang.cn email:lge@luguang.cn bta04 t/d/s/a btb04 t/d/s/a symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc bta 4.4 c/w btb 3.2 rth (j-c) ac junction to case for 360 conduction angle (f = 50hz) bta 3.3 c/w btb 2.4 gate characteristics (maximum values) p g(av) =1w p gm = 40w (tp = 20s) i gm = 4a (tp = 20s) v gm = 16v (tp = 20s) thermal resistance symbol test conditions quadrant bta / btb04 unit tdsa i gt v d = 12v (dc) r l =33 w tj = 25c i - ii - iii max. 5 5 10 10 ma iv max. 5 10 10 25 v gt v d = 12v (dc) r l =33 w tj = 25c i - ii - iii - iv max. 1.5 v v gd v d =v drm r l = 3.3k w tj =110c i - ii - iii - iv min. 0.2 v tgt v d =v drm i g = 40ma di g /dt = 0.5a/s tj = 25c i - ii - iii - iv typ. 2 s i l i g = 1.2i gt tj = 25c i - iii - iv typ. 10 10 20 20 ma ii 20 20 40 40 i h *i t = 100ma gate open tj = 25c max. 15 15 25 25 ma v tm *i tm = 5.5a tp = 380s tj = 25c max. 1.65 v i drm i rrm v drm rated v rrm rated tj = 25c max. 0.01 ma tj = 110c max. 0.75 dv/dt * linear slope up to v d = 67% v drm gate open tj = 110c typ. 10 10 - - v/ m s min. - - 10 10 (di/dt)c* (di/dt)c = 1.8a/ms tj = 110c typ. 1 1 5 5 v/s * for either polarity of electrode a 2 voltage with reference to electrode a 1 electrical characteristics
http://www.luguang.cn email:lge@luguang.cn bta04 t/d/s/a btb04 t/d/s/a package i t(rms) v drm /v rrm sensitivity specification a v tdsa bta (insulated) 4 400 x x 600 x x 700 x x btb (uninsulated) 400 x x 600 x x product information bt a 04 - 400 t triac series insulation: a: insulated b: non insulated current: 04a voltage: 400: 400v 600: 600v 700: 700v sensitivity ordering information
http://www.luguang.cn email:lge@luguang.cn bta04 t/d/s/a btb04 t/d/s/a fig. 3: correlation between maximum rms power dissipation and maximum allowable temperature (tamb and tcase) for different thermal resistances heatsink + contact (btb). fig. 4: rms on-state current versus case temper- ature. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.1 1 zth/rth zth(j-c) zth(j-a) tp(s) fig. 5: relative variation of thermal impedance versus pulse duration. fig. 6: relative variation of gate trigger current and holding current versus junction temperature. fig. 1: maximum rms power dissipation versus rms on-state current (f = 50hz).(curves are cut off by (di/dt)c limitation) fig. 2: correlation between maximum rms power dissipation and maximum allowable temperature (tamb and tcase) for different thermal resistances heatsink + contact (bta).
http://www.luguang.cn email:lge@luguang.cn bta04 t/d/s/a btb04 t/d/s/a fig. 9: on-state characteristics (maximum values). fig. 7: non repetitive surge peak on-state current versus number of cycles. fig. 8: non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and cor- responding value of i 2 t.

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