st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 description st3413a is the pchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize onstate resistance . these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and lo w inline power loss are required. the product is in a very small outline surface mount pa ckage. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: week code feature - 20v/3.4a, r ds(on) = 70m (typ.) @v gs = 4.5v 20v/2.4a, r ds(on) = 80m @v gs = 2.5v 20v/1.7a, r ds(on) = 125m @v gs = 1.8v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot23 package design 3 1 2 d g s 3 1 2 13ya
st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 20 v gatesource voltage v gss 8 v continuous drain current (tj=150 ) t a =25 t a =70 i d 3.5 2.8 a pulsed drain current i dm 15 a continuous source current (diode conduction) i s 1.4 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 55/150 storage temperature range t stg 55/150 thermal resistancejunction to ambient r ja 105 /w
st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.35 0.8 v gate leakage current i gss v ds =0v,v gs = 8v 100 na zero gate voltage drain current i dss v ds =20v,v gs =0v 1 ua v ds =20v,v gs =0v t j =55 5 onstate drain current i d(on) v ds Q 5v,v gs =4.5v v ds Q 5v,v gs =2.5v 6 3 a drainsource onresistance r ds(on) v gs = 1.8v,i d = 1.7a v gs =2.5v,i d =2.4a v gs =4.5v,i d =3.4a 0.125 0.080 0.070 forward transconductance g fs v ds =5v,i d =2.8a 6 s diode forward voltage v sd i s =1.5a,v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =6v v gs =4.5v i d =2.8a 4.8 8 nc gatesource charge q gs 1.0 gatedrain charge q gd 1.0 input capacitance c iss v ds =6v v gs =0v f=1mh z 485 pf output capacitance c oss 85 reverse transfer capacitance c rss 40 turnon time t d(on) tr v dd =6v r l =6 i d =1a v gen =4.5v r g =6 10 16 ns 13 23 turnoff time t d(off) tf 18 25 15 20
st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 typical characterictics (25 unless noted)
st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 typical characterictics (25 unless noted)
st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 typical characterictics (25 unless noted)
st3413a p channel enhancement mode mosfet 3.5a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3413a 2006 v1 sot-23 package outline
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