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  rev a.02 d051011 1 UM3302 n-ch and p-ch fast switching mosfets symbol parameter rating units n-ch p-ch v ds drain-source voltage 30 -30 v v gs gate-sou r ce voltage 20 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 9.5 -6.5 a i d @t a =70 continuous drain current, v gs @ 10v 1 7.6 -5.2 a i dm pulsed drain current 2 40 -26 a eas single pulse avalanche energy 3 138 176 mj i as avalanche current 35 -38 a p d @t a =25 total power dissipation 4 1.5 1.5 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 25 /w bvdss rdson id 30v 10.5m 9.5a -30v 25m ? -6.5a the UM3302 is the highest performance trench n-ch and p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM3302 meet the rohs and green product requirement 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z ccfl back-light inverter absolute maximum ratings thermal data dual sop8 pin configuration product summery s1 s2 g2 d1 d1 d2 d2 g1
2 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.027 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =10a --- 8.5 10.5 m v gs =4.5v , i d =8a --- 12 15 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -5.8 --- mv/ i dss drain-source leakage current v ds =24v , v gs =0v , t j =25 --- --- 1 ua v ds =24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =10a --- 5.8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.2 4.4 q g total gate charge (4.5v) v ds =15v , v gs =4.5v , i d =10a --- 12.5 17.5 nc q gs gate-source charge --- 4.4 6.2 q gd gate-drain charge --- 5 7.0 t d(on) turn-on delay time v dd =15v , v gs =10v , r g =3.3 i d =10a --- 6.2 12.4 ns t r rise time --- 59 106 t d(off) turn-off delay time --- 27.6 55 t f fall time --- 8.4 16.8 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 1317 1845 pf c oss output capacitance --- 163 228.2 c rss reverse transfer capacitance --- 131 183.4 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =20a 45 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 9.5 a i sm pulsed source current 2,6 --- --- 40 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =10a , di/dt=100a/s , t j =25 --- 12.5 --- ns q rr reverse recovery charge --- 5 --- nc diode characteristics guaranteed avalanche characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =35a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. n-channel electrical characteristics (t j =25 , unless otherwise noted) UM3302
3 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =-1ma --- -0.022 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-10v , i d =-6a --- 20 25 m v gs =-4.5v , i d =-4a --- 34 42 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.0 -1.5 -2.5 v v gs(th) v gs(th) temperature coefficient --- 4.6 --- mv/ i dss drain-source leakage current v ds =-24v , v gs =0v , t j =25 --- --- -1 ua v ds =-24v , v gs =0v , t j =55 --- --- -5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-6a --- 17 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 13 26 q g total gate charge (-4.5v) v ds =-15v , v gs =-4.5v , i d =-6a --- 12.6 17.6 nc q gs gate-source charge --- 4.8 6.7 q gd gate-drain charge --- 4.8 6.7 t d(on) turn-on delay time v dd =-15v , v gs =-10v , r g =3.3 , i d =-6a --- 4.6 9.2 ns t r rise time --- 14.8 26.6 t d(off) turn-off delay time --- 41 82 t f fall time --- 19.6 39.2 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 1345 1883 pf c oss output capacitance --- 194 272 c rss reverse transfer capacitance --- 158 221 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-20a 49 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- -6.5 a i sm pulsed source current 2,6 --- --- -26 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v t rr reverse recovery time i f =-6a , di/dt=100a/s , t j =25 --- 16.3 --- ns q rr reverse recovery charge --- 5.9 --- nc diode characteristics guaranteed avalanche characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-38a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. p-channel electrical characteristics (t j =25 , unless otherwise noted) UM3302
4 n-ch and p-ch fast switching mosfets 0 7 14 21 28 35 42 0 0.5 1 1.5 2 2.5 3 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 6 8 9 11 12 246810 v gs (v) r dson (m ? ) i d =8a 0 2 4 6 8 10 12 00.30.60.9 v sd , source-to-drain voltage (v) i s - source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM3302
5 n-ch and p-ch fast switching mosfets 10 100 1000 10000 1 5 9 13172125 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform UM3302
6 n-ch and p-ch fast switching mosfets 18 22 26 30 34 246810 v gs (v) r dson (m ? ) i d =6a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance p-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j UM3302
7 n-ch and p-ch fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM3302


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