AO4411 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -8a r ds(on) (at v gs =-10v) < 32m w r ds(on) (at v gs = -4.5v) < 55m w 100% uis tested 100% r g tested symbol v ds drain-source voltage -30 the AO4411 uses advanced trench technology to provi de excellent r ds(on) , and ultra-low low gate charge. this device is suitable for use as a load switch or in p wm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v g ds soic-8 top view bottom view d d d d s s s g v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics w 3.1 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a v 20 gate-source voltage drain-source voltage -30 v mj avalanche current c 26 a 23 a i d -8 -6.6 -40 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 g ds soic-8 top view bottom view d d d d s s s g rev 11: nov 2011 www.aosmd.com page 1 of 6
AO4411 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.3 -1.85 -2.4 v i d(on) -40 a 21 32 t j =125c 31.5 38 33 55 m w g fs 19 s v sd -0.8 -1 v i s -3.5 a c iss 760 pf c oss 140 pf c rss 95 pf r g 1.5 3.2 5 w q g (10v) 13.6 16 nc q g (4.5v) 6.7 8 nc q gs 2.5 nc q gd 3.2 nc t d(on) 8 ns t 6 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-10v, v =-15v, r =1.8 w , total gate charge v gs =-10v, v ds =-15v, i d =-8a gate source charge gate drain charge total gate charge i s =-1a,v gs =0v v ds =-5v, i d =-8a v gs =-4.5v, i d =-5a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz m a v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 6 ns t d(off) 17 ns t f 5 ns t rr 15 ns q rr 9.7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-8a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.8 w , r gen =3 w turn-off fall time i f =-8a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 11: nov 2011 www.aosmd.com page 2 of 6
AO4411 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 45 50 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-5a v gs =-10v i d =-8a 25 c 125 c v ds =-5v v gs =-4.5v v gs = - 10v 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs = - 3v -3.5v - 6v - 5v -10v - 4.5v - 4v 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 45 50 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-5a v gs =-10v i d =-8a 0 20 40 60 80 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =-5v v gs =-4.5v v gs = - 10v i d =-8a 25 c 125 c 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs = - 3v -3.5v - 6v - 5v -10v - 4.5v - 4v rev 11: nov 2011 www.aosmd.com page 3 of 6
AO4411 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-8a 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 10.0 100.0 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c ) t a =25 c t a =150 c t a =100 c t a =125 c 0 2 4 6 8 10 0 2 4 6 8 10 12 14 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-8a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 10.0 100.0 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c ) t a =25 c t a =150 c t a =100 c t a =125 c rev 11: nov 2011 www.aosmd.com page 4 of 6
AO4411 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w rev 11: nov 2011 www.aosmd.com page 5 of 6
AO4411 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 11: nov 2011 www.aosmd.com page 6 of 6
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