general description features this integrated transient voltage suppressor device (tvs) is designed for applications requiring transient overvoltage protection, printers, business machines, communication systems, medical equipment, and other applications. its integrated design provides very effective and reliable protection for separate lines using only one package. these devices are ideal for situations where board space is at a premium. z four separate unidirectional configurations for protection z low leakage current < 1 a @ 3volts z power dissipation: 380mw z small sot - 563 smt package z low capacitance z complies to usb 1.1 low speed & speed specifications z these are pb-free devices applications complies with the following standards z serial and parallel ports z microprocessor based equipment iec61000-4-2 z notebooks, desktops, servers level 4 15 kv (air discharge) z cellular and portable equipment 8 kv(contact discharge ) mil std 883e - method 3015-7 class 3 25 kv hbm (human body model) functional diagram sot-563 maximum ratings (t a =25c) symbol parameter value units 25 w p peak power dissipation( 820s@t =25 ) pk a p steady state power-1 diode 380 mw d thermal resistance, junction-to-ambient 327 /w r ja 3.05 above 2 5, derate mw / t maximum junction temperature 150 jmax t j t operation junction and storage temperature range -55 to +150 stg t lead solder temperature(10 seconds duration) 260 l z low capacitance quad array for esd protection MSEMF3V3LCC willas electronic corp. 2012-09
electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t i f forward current v f forward voltage @ i f electrical characteristics v c br v i i typ. 0v bias t rwm r min. typ. max. part numbers v v v ma v a pf MSEMF3V3LCC 5.3 5.6 5.9 1 3.0 1.0 12 1. non-repetitive current per figure 1. 2. only 1 diode under power. for 4 diodes under power 3. capacitance of one diode at f=1mhz,t a =25 ty pical characteristics figure 1 pulse width figure 2 power derating curve low capacitance quad array for esd protection MSEMF3V3LCC willas electronic corp. 2012-09
figure 3 reverse leakage versus temperature figure 4 capacitance figure 5 8*20 pulse waveform figure 6 forward voltage low capacitance quad array for esd protection MSEMF3V3LCC willas electronic corp. 2012-09
typical dim millimeters inches 1 0.30 0.012 2 1.02 0.040 3 0.51 0.020 4 1.40 0.055 5 0.51 0.020 type number marking code MSEMF3V3LCC 3c low capacitance quad array for esd protection MSEMF3V3LCC willas electronic corp. 2012-09 sot-563 mechanical data .059(1.50) .067(1.70) .051(1.30) .043(1.10) .011(0.27) .007(0.17) .024(0.60) .020(0.50) .007(0.16) .003(0.08) .012(0.30) .004(0.10) .067(1.70) .059(1.50) .024(0.60) .020(0.50) .059(1.50) .067(1.70) dimensions in inches and (millimeters)
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