AOT266L/aob266l/aotf266l v ds i d (at v gs =10v) 140a/78a r ds(on) (at v gs =10v) < 3.5m w (< 3.2m w * ) r ds(on) (at v gs =6v) < 4.0m w (< 3.8m w * ) symbol v ds v gs 60v AOT266L/aob266l aotf266l drain-source voltage 60 the AOT266L & aob266l & aotf266l uses trench mosfet technology that is uniquely optimized to pro vide the most efficient high frequency switching perform ance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) ciss and coss. this device is ideal for boost conve rters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v units parameter absolute maximum ratings t a =25c unless otherwise noted v 20 gate-source voltage g d s i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc * surface mount package to263 78 110 55 450 maximum junction-to-case pulsed drain current c continuous drain current g power dissipation a 15 t c =100c power dissipation b p d 134 22.5 -55 to 175 c/w c/w maximum junction-to-ambient a d 0.56 60 3.3 w t a =70c 1.3 t a =25c 2.1 p dsm a t a =25c i dsm 268 45.5 18 140 90 avalanche energy l=0.1mh c a t a =70c continuous drain current 405 i d w t c =25c c thermal characteristics parameter AOT266L/aob266l aotf266l maximum junction-to-ambient a c/w r q ja 15 60 t c =25c t c =100c mj avalanche current c 14 a units junction and storage temperature range www.freescale.net.cn 1/7 60v n-channel mosfet general description features
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.2 2.7 3.2 v i d(on) 450 a 2.9 3.5 t j =125c 4.9 5.9 g fs 80 s v sd 0.65 1 v i s 140 a c iss 5650 pf c oss 720 pf c rss 20 pf r g 0.4 0.9 1.4 w q (10v) 65 90 nc v gs =10v, i d =20a m w to263 v gs =6v, i d =20a 3 3.8 m w to263 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v i dss m a zero gate voltage drain current m w to220/to220f on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a gate-body leakage current v ds =v gs i d =250 m a v ds =0v, v gs =20v r ds(on) static drain-source on-resistance 2.6 3.2 forward transconductance gate resistance v gs =0v, v ds =0v, f=1mhz i s =1a,v gs =0v v ds =5v, i d =20a diode forward voltage maximum body-diode continuous current g input capacitance output capacitance reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz dynamic parameters total gate charge switching parameters m w to220/to220f 3.2 4 v gs =6v, i d =20a q g (10v) 65 90 nc q gs 20 nc q gd 7 nc t d(on) 21 ns t r 20 ns t d(off) 36 ns t f 6 ns t rr 27 ns q rr 145 nc turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w turn-off fall time v gs =10v, v ds =30v, i d =20a turn-on delaytime i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s total gate charge gate source charge gate drain charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/7 AOT266L/aob266l/aotf266l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =6v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =6v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 4v 4.5v 10v vgs=3.5v 6v v gs =10v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/7 AOT266L/aob266l/aotf266l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 100 200 300 400 500 600 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =30v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for AOT266L and aob266l (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 40 for AOT266L and aob266l (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOT266L and aob266l (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse area for AOT266L and aob266l (note f) r q jc =0.56 c/w www.freescale.net.cn 4/7 AOT266L/aob266l/aotf266l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for aotf266l 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 0 100 200 300 400 500 600 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 13: single pulse power rating junction-to-ca se for aotf266l (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c r q jc =3.3 c/w pulse width (s) figure 14: normalized maximum transient thermal imp edance for aotf266l (note f) www.freescale.net.cn 5/7 AOT266L/aob266l/aotf266l 60v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 16: power de-rating (note f) 0 30 60 90 120 150 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 17: current de - rating (note f) 1 10 100 1000 0.001 0.1 10 1000 power (w) pulse width (s) figure 18: single pulse power rating junction - to - t a =25 c 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 15: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 19: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 17: current de - rating (note f) figure 18: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w www.freescale.net.cn 6/7 AOT266L/aob266l/aotf266l 60v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 7/7 AOT266L/aob266l/aotf266l 60v n-channel mosfet
|
