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parameter max. units v ds drain- source voltage -40 v i d @ t a = 25c continuous drain current, v gs @ -10v -4.6 i d @ t a = 70c continuous drain current, v gs @ -10v -3.7 a i dm pulsed drain current -19 p d @t a = 25c power dissipation 1.5 p d @t a = 70c power dissipation 1.0 linear derating factor 12 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c 04/23/08 www.irf.com 1 IRF7704GPBF hexfet power mosfet parameter max. units r ja maximum junction-to-ambient 83 c/w thermal resistance
v dss r ds(on) max (m i d -40v 46@v gs = -10v -4.6a 74@v gs = -4.5v -3.7a description ultra low on-resistance p-channel mosfet very small soic package low profile (< 1.1mm) available in tape & reel lead-free halogen-free hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design, that inter- national rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. the tssop-8 package has 45% less footprint area than the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and pcmcia cards. tssop-8

2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -40 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = -1ma ??? ??? 46 v gs = -10v, i d = -4.6a ??? ??? 74 v gs = -4.5v, i d = -3.7a v gs(th) gate threshold voltage -1.0 ??? -3.0 v v ds = v gs , i d = -250a g fs forward transconductance 7.2 ??? ??? s v ds = -10v, i d = -4.6a ??? ??? -10 v ds = -32v, v gs = 0v ??? ??? -25 v ds = -32v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 25 38 i d = -4.6a q gs gate-to-source charge ??? 10 15 nc v ds = -15v q gd gate-to-drain ("miller") charge ??? 9.5 14 v gs = -4.5v t d(on) turn-on delay time ??? 25 ??? v dd = -20v t r rise time ??? 360 ??? i d = -1.0a t d(off) turn-off delay time ??? 190 ??? r g = 6.0 ? t f fall time ??? 100 ??? v gs = -4.5v c iss input capacitance ??? 3150 ??? v gs = 0v c oss output capacitance ??? 250 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 200 ??? ? = 1.0khz parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.5a, v gs = 0v t rr reverse recovery time ??? 29 44 ns t j = 25c, i f = -1.5a q rr reverse recovery charge ??? 41 62 nc di/dt = -100a/s source-drain ratings and characteristics 19 1.5 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle electrical characteristics @ t j = 25c (unless otherwise specified)
m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current surface mounted on 1 in square cu board
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v 4.6a fig 4. normalized on-resistance vs. temperature 2.5 3.0 3.5 4.0 4.5 5.0 -v gs , gate-to-source voltage (v) 0.0 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -25v 20s pulse width
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 10 20 30 40 50 60 0 2 4 6 8 10 12 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.6a v = -20v ds v = -32v ds fig 7. typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage 048121620 -i d , drain current (a) 0.020 0.030 0.040 0.050 0.060 0.070 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -10v v gs = -4.5v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 4.0 8.0 12.0 16.0 -v gs, gate -to -source voltage (v) 0.02 0.04 0.06 0.08 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -4.6a
www.irf.com 7 fig 14. threshold voltage vs. tempera- ture -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 20 40 60 80 p o w e r ( w )
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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2008

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