? 2004 ixys all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c110 t c = 110 c16a i f110 t c = 110 c (diode) 11 a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t j = 125 c, r g = 22 ? i cm = 32 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature 260 c soldering smd devices for 10s weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 50 a v ge = 0 v t j =125 c1 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 12 a , v ge = 15 v 3.0 v note 2 t j =125 c 2.1 v ds99179(04/04) hiperfast tm igbt c2-class high speed igbt ixgh 16n60c2d1 v ces = 600 v i c25 =40a v ce(sat) = 3.0 v t fi(typ) =35ns advance technical information features z very high frequency igbt z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications g c e to-247 (ixgh)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 16n60c2d1 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 2.66 v t j = 125 c 1.66 i rm i f = 12 a; -di f /dt = 100 a/ s, v r = 100 v 2.5 a t rr v ge = 0 v; t j = 125 c 110 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 30 n s r thjc 2.5 k/w symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 12a; v ce = 10 v, 8 12 s note 2. c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 720 pf c ies 65 pf c res 19 pf q g i c = 20a, v ge = 15 v, v ce = 0.5 v ces 32 nc q ge 6nc q gc 10 nc t d(on) 25 ns t ri 15 ns t d(off) 60 120 ns t fi 35 ns e off 60 100 j t d(on) 25 ns t ri 18 ns e on 700 j t d(off) 120 ns t fi 70 ns e off 150 j r thjc 0.83 k/w r thck 0.25 k/w inductive load, t j = 125 c i c = 12a; v ge = 15 v v ce = 400 v; r g = r off = 22 ? note 1 inductive load, t j = 25 c i c = 12 a; v ge = 15 v v ce = 400 v; r g = r off = 22 ? note 1. notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j , or increased r g . 2. pulse test, t 300 s, duty cycle d 2 % to-247 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
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