m6mgb/t647m17akt renesas lsis 67,108,864 - bit (4,194,304 - word by 16 - bit) cmos flash memory & 16,777,216 - bit (1,048,576 - word by 16 - bit) cmos mobile ram stacked - umcp (micro multi chip package) rev.1.2_48a_bezb 1 pin configuration (top view) the m6mgb/t647m17akt is a stacked micro multi chip package (s - umcp) that contents 64m - bit flash memory and 16m - bit mobile ram in a 52 - pin tsop for lead free use. 64m - bit flash memory is a 4,194,304 words, single power supply and high performance non - volatile memory fabricated by cmos technology for the peripheral circuit and dinor iv (divided bit - line nor iv) architecture for the memory cell. all memory blocks are locked and can not be programmed or erased, when f - wp# is low. using software lock release function, program or erase operation can be executed. 16m - bit mobile ram is a 1,048,576 words high density ram fabricated by cmos technology for the peripheral circuit and dram cell for the memory array. the interface is compatible to an asynchronous sram. the cells are automatically refreshed and the refresh control is not required for system. the device also has the partial block refresh scheme and the power down mode by writing the command. the m6mgb/t647m17akt is suitable for a high performance cellular phone and a mobile pc that are required to be small mounting area, weight and small power dissipation. access time flash 70ns (max.) mobile ram 85ns (max.) supply voltage fm - vcc=2.7 ~ 3.0v ambient temperature ta= - 40 ~ 85 degree package 52pin tsop(type - ii), lead pitch 0.4mm outer - lead finishing: sn - cu application outline 52ptj - a mobile communication products gnd : common gnd for flash/mobile ram a0 - a19 :common address for flash/mobile ram dq0 - dq15 :data i/o 10.49 mm 10.79 mm 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 a16 m-ce# m-ub# gnd m-lb# dq15 dq7 dq14 dq6 dq13 dq5 dq12 dq4 fm-vcc dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 oe# gnd 28 27 f-ce# a0 a15 a14 a13 a12 a11 a10 a9 a8 a19 nc we# a21 a20 a18 a17 a7 a6 a5 a4 a3 a2 a1 nc nc f-rp# f-wp# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 a20,a21 :common address for flash f - ce# :flash chip enable m - ce# :mobile ram chip enable fm - vcc :common vcc for flash/mobile ram we# :write enable for flash/mobile ram f - wp # :write protect for flash m - lb# :lower byte control for mobile ram f - rp # :reset power down for flash m - ub # :upper byte control for mobile ram oe# :output enable for flash/mobile ram description features
m6mgb/t647m17akt renesas lsis 67,108,864 - bit (4,194,304 - word by 16 - bit) cmos flash memory & 16,777,216 - bit (1,048,576 - word by 16 - bit) cmos mobile ram stacked - umcp (micro multi chip package) rev.1.2_48a_bezb 2 mcp block diagram note: in the data sheet there are ? vcc ? s and they means fm - vcc(the common power supply for flash and mobile ram). in the mobile ram part ub# and lb# are m - ub# and m - lb#, respectively. a0 to a21 a0 to a21 a0 to a19 f-ce# f-wp# f-rp# we# oe# m-ub# m-lb# m-ce# dq0 to dq15 64mbit dinor iv flash memory 16mbit mobile ram fm-vcc gnd symbol cin cout input capacitance output capacitance parameter a21 - a0, oe#, we#, f - ce#, m - ce#, f - wp#, f - rp#, m - lb#, m - ub# dq15 - dq0 test conditions ta = 25 degree, f = 1mhz, vin = vout = 0v unit pf pf limits min. typ. max. 18 22 capacitance
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