1) small power mold type. (pmds) RSA30L esd protection device (tvs) ? applications for terminal protection device ? features 2) high reliability ? construction silicon epitaxial planar ? taping specifications (unit : mm) .062(1.58) .050(1.27) .012(.31) .005(.13) .056(1.41) .031(0.80) .187(4.75) .160(4.06) .210(5.33) .190(4.85) .111(2.83) .090(2.29) .103(2.61) .074(1.90) sma/do-214ac dimensions in inches and (millimeters) b f p0 p p1 a a w e d1 b d b-b b0 k0 5 a-a k0 a 0 t 8 ? case type outline symbol ? carrier width a0 ? carrier length b0 ? carrier depth k0 ? totall tape thickness t ? tape width w ?? punch hole pitch p ? sprocket hole pitch p0 ? sprocket hole position e ? punch hole position f pitch position p1 ? sprocket hole diameter d ?? punch hole diameter d1 do214ac sma 2.790.10 0.1100.004 5.330.10 0.2100.004 2.360.05 0.0930.002 0.300.05 0.0120.002 12.000.10 0.4720.004 4.000.10 0.1570.004 4.000.10 0.1570.004 1.750.10 0.0690.004 5.500.05 0.2170.002 2.000.05 0.0790.002 1.550.05 0.0610.002 1.500.10 0.0590.004 e?o?? xinghe electronics gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
2 reverse voltagevr(v) vr-ir characteristics reverse current:ir (na) reverse current:ir(na) ir disresion map capacitance between terminals:ct(nf) reverse voltage:vr(v) vr-ct characteristics ct disresion map capacitance betweenterminals:ct(nf) zener current:iz(ma) zener voltage:vz(v) vz-iz characteristics dynamic impedance:zz() zener current(ma) zz-iz characteristics vz disresion map zener voltage:vz() time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 ta=25 ta=-25 ta=75 ta=125 ta=150 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 ta=25 vr=3.5v n=30pcs ave:0.0143na 0.1 1 10 0 5 10 15 20 25 f=1mhz 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ave:0.884nf ta=25 f=1mhz vr=0v n=10pcs 0.001 0.01 0.1 1 10 25 26 27 28 29 30 31 32 33 34 ta=75 ta=-25 ta=25 ta=125 ta=150 1 10 100 0.1 1 10 27 28 29 30 31 32 ave:29.651v ta=25 if=1ma n=30pcs 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=10ma if=0.5a 300us time mounted on epoxy board 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k c=200pf r=0 no break at 30kv electrostatic discharge test esd(kv) esd dispersion map ? absolute maximum ratings (ta=25c) symbol unit ppk w v rmn v tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v br 28.5 - 31.5 v i r =1.0ma v c - - 41.4 v i pp =14.4a i r --5 ua v rmn =25.6v parameter limits peak pulse (tp=101000us) 600 stand off power 25.6 junction temperature 150 clamping voltage reverse current storage temperature ? 55 to ? 150 parameter breakdown voltage RSA30L esd protection device (tvs) e?o?? xinghe electronics gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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