d 3 pak g c e min typ max 4.5 5.5 6.5 2.7 3.2 3.3 3.9 1 6 100 characteristic / test conditions gate threshold voltage (v ce = v ge , i c = 600a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) gate-emitter leakage current (v ge = 20v, v ce = 0v) unit volts ma na symbol v ge (th) v ce (on) i ces i ges parameter collector-emitter voltage collector-gate voltage (r ge = 20k ? ) gate-emitter voltage continuous collector current 3 @ t c = 25c continuous collector current @ t c = 105c pulsed collector current 1 @ t c = 90c rbsoa clamped inductive load current @ r g = 11 ? t c = 125c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. to-247 g c e g c e apt20gf120brd APT20GF120SRD 1200v 32a the fast igbt ? is a new generation of high voltage power igbts. using non- punch through technology the fast igbt? combined with an apt free- wheeling ultrafast recovery epitaxial diode (fred) offers superior ruggedness and fast switching speed. ? low forward voltage drop ? high freq. switching to 20khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated ? ultrafast soft recovery antiparallel diode fast igbt & fred maximum ratings (igbt) all ratings: t c = 25c unless otherwise specified. static electrical characteristics (igbt) caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com 052-6252 rev c 4-2003 symbol v ces v cgr v ge i c1 i c2 i cm i lm p d t j ,t stg t l apt20gf120brd/srd 1200 1200 20 32 20 64 40 200 -55 to 150 300 unit volts amps watts c
symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics (igbt) apt20gf120brd/srd unit c/w oz gm lb?in n?m min typ max 0.63 0.90 40 0.22 6.1 10 1.1 characteristic junction to case (igbt) junction to case (fred) junction to ambient package weight mounting torque using a 6-32 or 3mm binding head machine screw symbol r jc r ja w t torque thermal and mechanical characteristics (igbt and fred) test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.8v ces i c = i c2 r g = 10 ? inductive switching (150c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +150c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +25c v ce = 20v, i c = 15a min typ max 1050 1210 100 150 63 110 95 140 13 20 62 90 15 30 67 130 92 140 93 190 17 34 30 60 105 160 71 140 1.3 3 1.5 3 2.7 5 17 30 35 70 93 140 70 140 2.4 5 12 unit pf nc ns ns mj ns mj s characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 2 gate-emitter charge gate-collector ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance 1 repetitive rating: pulse width limited by maximum junction temperature. 2 see mil-std-750 method 3471 3 switching losses include the fred and igbt. apt reserves the right to change, without notice, the specifications and information contained herein. 052-6252 rev c 4-2003
052-6252 rev c 4-2003 apt20gf120brd/srd c, capacitance (pf) i c , collector current (amperes) i c , collector current (amperes) v ge , gate-to-emitter voltage (volts) i c , collector current (amperes) i c , collector current (amperes) t c =+25c t j =+150c single pulse 250sec. pulse test v ge = 15v i c = i c2 t j = +25c f = 1mhz 9v 11v 9v c ies c res 13v 7v 13v 11v 7v note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.05 d=0.5 0.2 0.02 0.01 single pulse c oes v ge =17 & 15v z jc , thermal impedance (c/w) v ge =17 & 15v t c =-55c t c =+25c t c =+150c 0.1 operation limited by v ce (sat) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 1, typical output characteristics (t j = 25c) figure 2, typical output characteristics (t j = 150c) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 3, typical output characteristics @ v ge = 15v figure 4, maximum forward safe operating area v ce , collector-to-emitter voltage (volts) q g , total gate charge (nc) figure 5, typical capacitance vs collector-to-emitter voltage figure 6, gate charges vs gate-to-emitter voltage rectangular pulse duration (seconds) figure 7, maximum effective transient thermal impedance, junction-to-case vs pulse duration 50 40 30 20 10 0 100 50 10 5 1 20 16 12 8 4 0 50 40 30 20 10 0 60 40 30 20 10 0 2,000 1,000 500 100 50 10 1.0 0.5 0.1 0.05 0.01 0.005 0.001 v ce =240v v ce =600v 0 4 8 12 16 20 0 4 8 12 16 20 0 2 4 6 8 1 5 10 50 100 1200 0.01 0.1 1.0 10 50 0 40 80 120 160 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 100s 1ms 10ms
052-6252 rev c 4-2003 apt20gf120brd/srd 5.0 4.0 2.0 1.5 1.0 1.2 1.1 1 0.9 0.8 0.7 10 1 0.1 100 10 1 v cc = 0.66 v ces v ge = +15v t j = +25c i c = i c2 v cc = 0.66 v ces v ge = +15v t j = +125c r g = 10 ? v cc = 0.66 v ces v ge = +15v r g = 10 ? i c1 0.5 i c2 i c2 i c1 e on e off e on e off 0.5 i c2 i c2 t j , junction temperature (c) t c , case temperature (c) figure 8, typical v ce (sat) voltage vs junction temperature figure 9, maximum collector current vs case temperature t j , junction temperature (c) r g , gate resistance (ohms) figure 10, breakdown voltage vs junction temperature figure 11, typical switching energy losses vs gate resistance t j , junction temperature (c) i c , collector current (amperes) figure 12, typical switching energy losses vs. junction temperature figure 13, typical switching energy losses vs collector curr ent f, frequency (khz) figure 14,typical load current vs frequency -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 0.1 1.0 10 100 1000 40 30 20 10 0 5.0 4.0 3.0 2.0 1.0 0 1.6 1.2 0.8 0.4 0 for both: duty cycle = 50% t j = +125c t sink = +90c gate drive as specified power dissapation = 56w i load = i rms of fundamental i c , collector current (amperes) total switching energy losses (mj) bv ces , collector-to-emitter breakdown v ce (sat), collector-to-emitter voltage (normalized) saturation voltage (volts) switching energy losses (mj) switching energy losses (mj) i c , collector current (amperes) graph not applicable
20gf120brd/srd symbol v f l s characteristic / test conditions i f = 20a maximum forward voltage i f = 60a i f = 20a, t j = 150c series inductance (lead to lead 5mm from base) unit volts nh min typ max 2.3 2.0 1.7 10 maximum ratings (fred) all ratings: t c = 25c unless otherwise specified. symbol if av if rms i fsm unit amps 20gf120brd/srd 30 70 210 characteristic maximum average forward current (t c = 100c, duty cycle = 0.5) rms forward current non-repetive forward surge current (t j = 45c, 8.3 ms) ultrafast soft recovery parallel diode 052-6252 rev c 4-2003 *driver same type as d.u.t. v cc = 0.66 v ces e ts = e on + e off v ce (on) t d (off) t d (on) t f t r 1 figure 15, switching loss test circuit and waveforms figure 16, resistive switching time test circuit and waveforms 2 v cc r g r l = .5 v ces i c2 10% 90% v ge (on) v ce (off) v ge (off) 2 1 from gate drive circuitry d.u.t. b i c i c 90% 10% 90% 10% 10% 90% e off t f t d (off) t d (on) t r e on i c v clamp 100uh v charge a a b d.u.t. driver* v c a r g v c v c d.u.t. v ce (sat) t=2us
20gf120brd/srd min typ max 70 85 70 160 255 255 712 12 20 660 1640 15 20 245 160 unit ns amps nc volts a/s characteristic/ test conditions reverse recovery time, i f = 1.0a, di f /dt = -15a/s, v r = 30v, t j = 25c reverse recovery time t j = 25c i f = 20a, di f /dt = -240a/s, v r = 650v t j = 100c forward recovery time t j = 25c i f = 20a, di f /dt = 240a/s, v r = 650v t j = 100c reverse recovery current t j = 25c i f = 20a, di f /dt = -240a/s, v r = 650v t j = 100c recovery charge t j = 25c i f = 20a, di f /dt = -240a/s, v r = 650v t j = 100c forward recovery voltage t j = 25c i f = 20a, di f /dt = 240a/s, v r = 650v t j = 100c rate of fall of recovery current t j = 25c i f = 20a, di f /dt = -240a/s, v r = 650v (see figure 18) t j = 100c dynamic characteristics (fred) symbol t rr1 t rr2 t rr3 t fr1 t fr2 i rrm1 i rrm2 q rr1 q rr2 v fr1 v fr2 dim/dt pearson 411 current transformer 0.5 i rrm di f /dt adjust 30h d.u.t. +15v -15v 0v v r 4 3 1 2 5 5 0.75 i rrm t rr / q rr waveform zero 6 1 2 3 4 6 di f /dt - current slew rate, rate of forward current change through zero crossing. i f - forward conduction current i rrm - peak reverse recovery current. t rr - reverse recovery time measured from point of i f q rr - area under the curve defined by i rrm and t rr . dim/dt - maximum rate of current change during the trailing portion of t rr. current falling through zero to a tangent line { dim/dt } extrapolated through zero defined by 0.75 and 0.50 i rrm . 6 figure 17, diode reverse recovery test circuit and waveforms figure 18, diode reverse recovery waveform and definitions q rr = 1 / 2 ( t rr . i rrm ) 052-6252 rev c 4-2003
z jc , thermal impedance t rr , reverse recovery time i rrm , reverse recovery current i f , forward current (c/w) (nano-seconds) (amperes) (amperes) t fr , forward recovery time k f , dynamic parameters q rr , reverse recovery charge (nano-seconds) (normalized) (nano-coulombs) v fr , forward recovery voltage (volts) 20gf120brd/srd 052-6252 rev a d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse note: dm jc c j =+ duty factor d = t 12 / peak t p x z t p dm t 2 t t 1 0 1 2 3 4 10 50 100 500 1000 0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 0 200 400 600 800 1000 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) 100 80 60 40 20 0 50 40 30 20 10 0 250 200 150 100 50 0 1.0 0.5 0.1 0.05 0.01 0.005 0.001 t j = 100c v r = 650v 2400 2000 1600 1200 800 400 0 2.0 1.6 1.2 0.8 0.4 0.0 2000 1600 1200 800 400 0 100 80 60 40 20 0 t j = 100c v r = 650v t j = 100c v r = 650v t j = 100c v r = 650v i f =30a t rr i rrm q rr t j = -55c t j = 100c t j = 150c 15a 30a 60a 15a 30a 60a 60a 30a 15a v fr t fr t j = 25c t rr q rr v f , anode-to-cathode voltage (volts) di f /dt, current slew rate (amperes/sec) figure 19, forward voltage drop vs forward current figure 20, reverse recovery charge vs current slew rate di f /dt, current slew rate (amperes/sec) t j , junction temperature (c) figure 21, reverse recovery current vs current slew rate figure 22, dynamic parameters vs junction temperature di f /dt, current slew rate (amperes/sec) di f /dt, current slew rate (amperes/sec) figure 23, reverse recovery time vs current slew rate figure 24, forward recovery voltage/time vs current slew rate v r , reverse voltage (volts) figure 25, maximum effective transient thermal impedance, junction-to-case vs pulse duratio n 052-6252 rev c 4-2003
20gf120brd/srd 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector (cathode) emitter (anode) gate collector (cathode) 052-6252 rev c 4-2003 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector) and leads (cathode) are plated 3.81 (.150) 4.06 (.160) (base of lead) collector (cathode ) (heat sink) 1.98 (.078) 2.08 (.082) gate collector (cathode) emitter (anode) 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 4/3/2003 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/3/2003 to - 247 package outline d 3 pak package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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