BGA736L16 tri-band hsdpa lna (2100, 1900/2100, 800/900 mhz) data sheet, v2.1, july 2008 rf & protection devices
edition 2008-07-03 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2009. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
data sheet 3 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna BGA736L16 revision history: 2008-07-03, v2.1 previous version: 2008-02-27, v2.0 page subjects (major cha nges since last revision) 5, 6 updated hbm esd protection 11 added rf characteristics for umts band viii 13 added rf characteristics for umts band iv 39 added application circuit schematic for umts bands i, iv and viii all updated values for high and mid gain currents
data sheet 4 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.5 band select / gain control truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.6 supply current characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.7 logic signal characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.8 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.9 measured rf characteristics low band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.9.1 measured rf characteristics umts band v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.9.2 measured rf characteristics umts band viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.10 measured rf characteristics mid band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.10.1 measured rf characteristics umts ba nd ii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.10.2 measured rf characteristics umts ba nd iv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.11 measured rf characteristics high band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.11.1 measured rf characteristics umts ba nd i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.12 measured performance low band high gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.13 measured performance low band high gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 16 2.14 measured performance low band mid gain mode vs. freque ncy . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.15 measured performance low band mid gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.16 measured performance low band low gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2.17 measured performance low band low gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 21 2.18 measured performance mid band high gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.19 measured performance mid band high gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 24 2.20 measured performance mid band mid gain mode vs. freque ncy . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2.21 measured performance mid band mid gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . . 26 2.22 measured performance mid band low gain mode vs. freque ncy . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2.23 measured performance mid band low gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.24 measured performance high band high gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . 30 2.25 measured performance high band high gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . 31 2.26 measured performance high band mid gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 32 2.27 measured performance high band mid gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 34 2.28 measured performance high band low gain mode vs. freq uency . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.29 measured performance high band low gain mode vs. temp erature . . . . . . . . . . . . . . . . . . . . . . . . 36 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.1 umts bands i, ii and v application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.2 umts bands i, iv and viii application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 3.3 pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 3.4 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4.2 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 table of contents
data sheet 5 v2.1, 2008-07-03 BGA736L16 - tri-band hsdpa lna description 1 description the BGA736L16 is a highly flexible, tri-gain mode, and tri-band (2100, 1900/2100, 800/900 mhz) mmic low noise amplifier for worldwide use. based on infineon?s proprieta ry and cost-effective sige :c technology, the BGA736L16 features dynamic gain contro l, temperature stabilizatio n, standby mode, and 2 kv esd protection on-chip and matching off chip. while two gain modes are common in w-cdma systems, a third gain mode has been introduced to reduce the lna gain just enough to pass adjacent channel te sts without compromising on hsdpa performance. the 1900 mhz path can be converted into a 2100 mhz path and vice versa by optimizing the input matching and using an additional external output matching network. this document specifies device performance for the band combinations - umts bands i / ii / v and umts bands i / iv / viii. figure 1 block diagram of triple-band lna features ? gain: 16 / 3 / -8 db in high / mid / low gain mode ? noise figure: 1.1 db in high gain mode ? supply current: 5.3 / 5.3 / 0.85 ma in high / mid / low gain modes ? standby mode curr ent consumption < 2 a ? outputs internally matched to 50 ? ? 2 kv hbm esd protection ? low external component count ? small leadless tslp-16-1 package (2.3 x 2.3 x 0.39 mm) ? pb-free (rohs compliant) package tslp-16-1 package type package marking chip BGA736L16 pg-tslp-16-1 bga736 t1540 % l d v l q j / r j l f & |