tv/linear applications rf & microwave transistors .400 x .425 8lfl (m168) epoxy sealed . 170 - 230 mhz . 28 volts . class ab push pull . designed for high power linear operation . high saturated power capability . gold metallization . diffused emitter ballast resistors . common emitter configuration . p out = 100 w min. with 11.0 db gain description the sd1456 is a gold metallized epitaxial silicon npn planar transistor using diffused emitter ballast resistors for high linearity class ab operation in vhf and band iii television transmitters and trans- posers. pin connection branding TCC3100 order code sd1456 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 65 v v ceo collector-emitter voltage 33 v v ebo emitter-base voltage 3.5 v i c device current 16 a p diss power dissipation 150 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 1.2 c/w sd1456 (TCC3100) 1. collector 3. base 2. emitter thermal data november 1992 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 225 mhz v ce = 28 v i c = 2 x 100 ma 100 w g p p out = 100 w v ce = 28 v i c = 2 x 100 ma 11 db h cp out = 100 w v ce = 28 v i c = 2 x 100 ma 70 % c ob f = 1 mhz v cb = 28 v 60 pf static symbol test conditions value unit min. typ. max. bv cbo i c = 50ma i e = 0ma 65 v bv cer i c = 50ma r be = 15 w 60 v bv ceo i c = 50ma i b = 0ma 33 v bv ebo i e = 5ma i c = 0ma 3.5 v h fe v ce = 5v i c = 500ma 20 150 dynamic (class ab) typical performance power output vs power input broadband power gain vs frequency dynamic (class a) symbol test conditions value unit min. typ. max. p out *f = 225 mhz v ce = 28 v i c = 2 x 2.5 a 28 32 w g p *p in = 1.1 w v ce = 28 v i c = 2 x 2.5 a 14 15 db imd 3 *p in = 1.1 w v ce = 28 v p ref = 28 w - 51 db note: * class a performance characteristics indicate capability but are not tested. imd3 - 3 tone meaurement; - 8, - 7, - 16db relative to p ref sd1456 (TCC3100) 2/5
impedance data freq. z in ( w )z out ( w ) 170 mhz 1.3 + j 0.6 9.5 - j 10.0 200 mhz 1.0 + j 1.0 9.0 - j 8.0 230 mhz 0.9 + j 1.8 6.3 - j 6.5 p out = 100 w v ce = 28 v i cq = 2 x 100 ma class ab intermodulation distortion vs power output collector efficiency vs frequency typical performance (cont'd) sd1456 (TCC3100) 3/5
impedance data freq. z in ( w )z out ( w ) 170 mhz 1.05 + j 0.65 13.5 - j 9.0 200 mhz 0.9 + j 1.1 11.0 - j 6.5 230 mhz 1.25 + j 1.8 9.5 - j 7.7 v ce = 28 v i cq = 2 x 2.5 a class a sd1456 (TCC3100) 4/5
package mechanical data ref.: dwg. no.12-0168 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a sd1456 (TCC3100) 5/5
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