bfl4001 no.a1638-1/5 features ? low on-resistance ? high-speed switching ? avalanche resistance guarantee ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 900 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 6.5 a i dpack *2 tc=25 c (sanyo?s ideal heat dissipation condition)*3 4.1 a drain current (pulse) i dp pw 10 s, duty cycle 1% 13 a allowable power dissipation p d 2.0 w tc=25 c (sanyo?s ideal heat dissipation condition)*3 37 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 223 mj avalanche current *5 i av 6.5 a note : * 1 shows chip capability * 2 package limited * 3 sanyo?s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =50v, l=10mh, i av =6.5a * 5 l 10mh, single pulse package dimensions unit : mm (typ) 7528-001 ordering number : ena1638a 22912 tkim tc-00002729/31010qb tk im tc-00002256 sanyo semiconductors data sheet bfl4001 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : to-220f-3fs ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 3 2 fl4001 lot no. 1 : gate 2 : drain 3 : source sanyo : to-220f-3fs 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18
bfl4001 no.a1638-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 900 v zero-gate voltage drain current i dss v ds = 720 v, v gs =0v 1.0 m a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 2.0 4.0 v forward transfer admittance | yfs | v ds =20v, i d = 3.25 a 1.8 3.6 s static drain-to-source on-state resistance r ds (on) i d = 3.25 a, v gs =10v 2.1 2.7 input capacitance ciss v ds =30v, f=1mhz 850 pf output capacitance coss v ds =30v, f=1mhz 130 pf reverse transfer capacitance crss v ds =30v, f=1mhz 43 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r see speci ed test circuit. 49 ns turn-off delay time t d (off) see speci ed test circuit. 156 ns fall time t f see speci ed test circuit. 52 ns total gate charge qg v ds =200v, v gs =10v, i d =6.5a 44 nc gate-to-source charge qgs v ds =200v, v gs =10v, i d =6.5a 7.0 nc gate-to-drain ?miller? charge qgd v ds =200v, v gs =10v, i d =6.5a 22 nc diode forward voltage v sd i s =6.5a, v gs =0v 0.85 1.2 v switching time test circuit avalanche resistance test circuit 50 50 rg v dd l 10v 0v bfl4001 pw=10 s d.c. 0.5% p. g r gs =50 g s d i d =3.25a r l =61.5 v dd =200v v out bfl4001 v gs =10v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs it15294 it15295 0 0 14 12 8 10 10 40 535 30 20 15 25 6 4 2 0 14 12 8 10 6 4 2 010 9 8 26 15 34 7 20v 10v tc=25 c v ds =20v v gs =4v 5v tc= --25 c 25 c 75 c 6v 7v
bfl4001 no.a1638-3/5 static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v r ds (on) -- tc r ds (on) -- v gs i s -- v sd drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds | y fs | -- i d forward transfer admittance, | y fs | -- s it15296 it15297 --50 --25 0 25 50 75 100 125 150 0 7 6 3 1 4 5 2 it15299 0.2 0.4 0.6 0.8 1.2 1.0 0.01 0.1 10 7 5 3 2 3 2 7 5 3 2 2 1.0 7 5 3 it15298 25 c --25 c tc=75 c 0.01 0.1 23 57 23 57 1.0 10 23 57 1.0 0.1 2 5 7 5 7 3 2 3 7 5 v ds =20v tc= --25 c 75 c v gs =0v 45 0 6 5 15 13 9 71114 610 812 3 1 4 2 i d =3.25a tc=75 c 25 c --25 c v gs =10v, i d =3.25a it15300 10 100 3 2 2 5 7 7 3 7 5 0.1 1.0 10 23 57 2 2 33 57 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 5 3 2 50 10 53040 20 15 35 45 25 it15301 f=1mhz ciss coss crss 25 c total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg a s o drain-to-source voltage, v ds -- v drain current, i d -- a it15302 0 0 1 2 3 4 5 6 7 8 50 10 9 20 40 10 530 25 45 15 35 v ds =200v i d =6.5a it16791 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 0.1 10 s 100ms 10ms 1ms dc operation 1.0 10 100 1000 23 57 23 57 7 23 5 23 57 10 100 3 5 7 5 7 3 2 operation in this area is limited by r ds (on). 100 s * 1. shows chip capability * 2. sanyo's ideal heat dissipation condition tc=25 c single pulse i dp =13a (pw 10 s) i dc (*1)=6.5a i dpack (*2)=4.1a
bfl4001 no.a1638-4/5 p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w it10478 0 0 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 it15304 it15305 0 0 20 40 60 80 100 140 120 5 10 25 37 20 40 35 30 15 160
bfl4001 ps no.a1638-5/5 this catalog provides information as of february, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. note on usage : since the bfl4001 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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