jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. unit: w the eight circuits share the com and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. input output gnd 10.5k 10k vz=7v com package type 18p4g(p) 20p2n-a(fp) package type 20p2e-a(kp) in7 ? 7 12 in5 ? 5 14 input output in4 ? 4 15 in3 ? 3 in2 ? 2 17 1 in1 ? 18 in6 ? 613 ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 16 in8 ? 8 11 gnd 9 ? o8 10 ? com commom in7 ? 8 13 in5 ? 6 15 input output in4 ? 5 16 in3 ? 4 in2 ? in1 ? in6 ? 7 14 3 18 ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 17 in8 ? 9 12 gnd 10 ? o8 11 2 19 1 20 nc nc ? com commom nc : no connection mitsubishi semiconductor M63815P/fp/kp 8-unit 300ma transistor array with clamp diode pin configuration description M63815P/fp/kp are eight-circuit single transistor arrays with clamping diodes. the circuits are made of npn transis- tors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features l three package configurations (p, fp, and kp) l medium breakdown voltage (bv ceo 3 35v) l synchronizing current (i c(max) = 300ma) l with clamping diodes l with zener diodes l low output saturation voltage l wide operating temperature range (ta = C40 to +85 c) application driving of digit drives of indication elements (leds and lamps) with small signals function the M63815P/fp/kp each have eight circuits consisting of npn transistor. a spike-killer clamping diode is provided be- tween each output pin (collector) and com pin. the transis- tor emitters are all connected to the gnd pin. the transistors allow synchronous flow of 300ma collector current. a maxi- mum of 35v voltage can be applied between the collector and emitter. circuit diagram
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. M63815P m63815fp m63815kp mitsubishi semiconductor M63815P/fp/kp 8-unit 300ma transistor array with clamp diode duty cycle no more than 50% duty cycle no more than 100% duty cycle no more than 30% duty cycle no more than 100% duty cycle no more than 12% duty cycle no more than 100% recommended operating conditions (unless otherwise noted, ta = C40 ~ +85 c) v (br) ceo v in(on) v f i r h fe v v v m a 35 13 50 19 1.2 0.2 0.8 23 2.0 10 symbol unit parameter test conditions limits min typ max v collector-emitter breakdown voltage on input voltage clamping diode forward volltage clamping diode reverse current dc amplification factor i ceo = 10 m a i in = 1ma, i c = 10ma i in = 2ma, i c = 150ma i in = 1ma, i c = 10ma i f = 250ma v r = 35v v ce = 10v, i c = 10ma v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 25 c) v o v 0 0 0 0 0 0 0 0 35 250 170 250 130 250 100 30 symbol unit parameter test conditions limits min typ max output voltage ma v i c v in input voltage collector current (current per 1 cir- cuit when 8 circuits are coming on si- multaneously) M63815P m63815fp m63815kp ns ns 140 240 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v ma v ma v w c c C0.5 ~ +35 300 C0.5 ~ +35 300 35 1.79 1.10 0.68 C40 ~ +85 C55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C40 ~ +85 c) output, h current per circuit output, l v ceo i c v i i f v r p d t opr t stg ta = 25 c, when mounted on board
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. ton toff 50% 50% 50% 50% input output (1)pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, zo = 50 w , v ih = 18v (2)input-output conditions : r l = 220 w , vo = 35v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor M63815P/fp/kp 8-unit 300ma transistor array with clamp diode duty cycle-collector characteristics (m63815fp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63815fp) duty cycle-collector characteristics (m63815kp) duty cycle (%) collector current ic (ma) 400 300 200 100 0 0 100 20 40 60 80 1 ~ 3 5 6 7 8 4 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 8 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c duty cycle-collector characteristics (m63815kp) duty cycle (%) collector current ic (ma) duty cycle (%) collector current ic (ma) 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 4 5 6 8 7 3 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 8 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c ta = 25 c i b = 3ma i b = 2ma i b = 1.5ma i b = 1ma i b = 0.5ma ta = 25 c v i = 32v v i = 28v v i = 24v v i = 20v v i = 16v v i = 12v
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor M63815P/fp/kp 8-unit 300ma transistor array with clamp diode grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) clamping diode characteristics forward bias voltage v f (v) forward bisa current i f (ma) 50 40 30 20 10 0 250 200 150 100 50 0 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6 2.0 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 10 0 10 1 10 2 10 1 10 2 10 3 23 57 23 57 2 3 5 7 2 3 5 7 10 3 23 57 i i = 2ma ta = ?0 c ta = 25 c ta = 85 c ta = 25 c v ce 10v 024 68 12 10 v ce = 4v ta = ?0 c 0481216 20 v ce = 4v ta = 85 c ta = ?0 c ta = 85 c ta = 25 c ta = ?0 c ta = 25 c ta = 85 c ta = 25 c
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