mar. 2006 preliminary notice: this is not a final specification. some parametric limits are subject to change. features ? floating supply voltage ................................. 600v ? output current .............................. +120ma/?50ma ? half bridge driver ? undervoltage lockout ? sop-8 package description M81719FP is high voltage power mosfet and igbt mod- ule driver for half bridge applications. block diagram pin configuration (top view) outline:8p2s mitsubishi semiconductors M81719FP high voltage half bridge driver 1. v cc 2. hin 3. lin 4. gnd 8. v b 7. ho 6. v s 5. lo 2 3 8 v b 7 ho 6 v s v cc 5 lo 4 gnd pulse gen inter lock delay filter filter uv detect filter v reg /v cc level shift hin lin hv level shift v reg /v cc level shift r s rq uv detect filter 1 v reg applications mosfet and igbt module inverter driver for automotive, pdp, hid lamp, refrigerator, air-conditioner, washing ma- chine, ac-servomotor and general purpose.
mar. 2006 preliminary notice: this is not a final specification. some parametric limits are subject to change. v v v v v v v w mw/ c c/w c c c v v v v v v v v s +10 0 10 v s 10 0 0 v s +20 500 20 v b 20 v cc 7 absolute maximum ratings (ta = 25 c unless otherwise specified) high side floating supply absolute voltage high side floating supply offset voltage high side floating supply voltage high side output voltage low side fixed supply voltage low side output voltage logic input voltage symbol unit parameter t est conditions limits min. typ. max. v bs = v b ? s hin, lin v b v s v bs v ho v cc v lo v in ?.5 ~ 624 v b ?4 ~ v b +0.5 ?.5 ~ 24 v s ?.5 ~ v b +0.5 ?.5 ~ 24 ?.5 ~ v cc +0.5 ?.5 ~ v cc +0.5 0.6 6.0 50 ?0 ~ 125 ?0 ~ 100 ?0 ~ 125 v bs = v b ? s hin, lin ta = 25 c, on board ta > 25 c, on board high side floating supply absolute voltage high side floating supply offset voltage high side floating supply voltage high side output voltage low side fixed supply voltage low side output voltage logic input voltage package power dissipation linear derating factor junction-case thermal resistance junction temperature operation temperature storage temperature v b v s v bs v ho v cc v lo v in pd k q rth(j-c) tj t opr t stg symbol parameter test conditions ratings unit recommended operating conditions mitsubishi semiconductors M81719FP high voltage half bridge driver thermal derating factor characteristic (maximum rating) package power dissipation pd (w) 0 0 0.2 0.4 0.7 0.1 0.3 0.5 0.6 25 50 100 75 125 150 temperature ta ( c) * for proper operation, the device should be used within the recommended conditions.
mar. 2006 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductors M81719FP high voltage half bridge driver a ma ma v v v v a a v v v s v v v s ma ma ? ? ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 0.2 13.6 2.7 8.0 7.4 0.4 8.0 7.4 0.4 120 250 60 110 60 110 0.2 0.6 14.2 0.3 5 8.9 8.2 0.6 7.5 8.9 8.2 0.6 7.5 200 350 40 15 250 250 130 50 250 250 130 50 0 0 80 150 80 150 1.0 0.5 1.0 0.6 0.8 20 2 9.8 9.0 9.8 9.0 70 30 350 350 220 80 350 350 220 80 30 30 100 190 100 190 100 floating supply leakage current v bs standby current v cc standby current high level output voltage low level output voltage high level input threshold voltage low level input threshold voltage high level input bias current low level input bias current v bs supply uv reset voltage v bs supply uv trip voltage v bs supply uv hysteresis voltage v bs supply uv filter time v cc supply uv reset voltage v cc supply uv trip voltage v cc supply uv hysteresis voltage v cc supply uv filter time output high level short circuit pulsed current output low level short circuit pulsed current output high level on resistance output low level on resistance high side turn-on propagation delay high side turn-off propagation delay high side turn-on rise time high side turn-off fall time low side turn-on propagation delay low side turn-off propagation delay low side turn-on rise time low side turn-off fall time delay matching, high side and low side turn-on delay matching, high side and low side turn-off input filter time (on) input filter time (off) i/o pulse width difference symbol unit parameter t est conditions limits min. typ.* max. v b = v s = 600v hin = lin = 0v hin = lin = 0v i o = ?0ma, lo, ho i o = 20ma, lo, ho hin, lin hin, lin v in = 5v v in = 0v v o = 0v, v in = 5v, pw < 10 s** v o = 15v, v in = 0v, pw < 10 s** i o = ?0ma, r oh = (v oh ? o )/i o i o = 20ma, r ol = v o /i o cl = 1000pf between ho-v s cl = 1000pf between ho-v s cl = 1000pf between ho-v s cl = 1000pf between ho-v s cl = 1000pf between lo-gnd cl = 1000pf between lo-gnd cl = 1000pf between lo-gnd cl = 1000pf between lo-gnd |t dlh(ho) ? dlh(lo) | |t dhl(ho) ? dhl(lo) | convex pulse concave pulse convex pulse concave pulse |p w(in) ? w(out) | i fs i bs i cc v oh v ol v ih v il i ih i il v bsuvr v bsuvt v bsuvh t vbsuv v ccuvr v ccuvt v ccuvh t vccuv i oh i ol r oh r ol t dlh(ho) t dhl(ho) t rh t fh t dlh(lo) t dhl(lo) t rl t fl ? t dlh ? t dhl tinon tinoff ? p w io electrical characteristics (ta = 25 c, v cc = v bs ( = v b ? s ) = 15v, unless otherwise specified) * typ. is not specified. ** it is recommended not to input short pulse continuously.
mar. 2006 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductors M81719FP high voltage half bridge driver timing diagram function table (x: h or l) lo = ho = low lo = high ho = high lo = ho = high ho = low, v bs uv tripped lo = high, v bs uv tripped lo = low, v cc uv tripped ho = lo = low, v cc uv tripped l l h h x x l h hin behavioral state lin v bs uv v cc uv ho lo l h l h l h x x h h h h l l h h h h h h h h l l l l h h l l l l l h l h l h l l note : ??state of v bs uv, v cc uv means that uv trip voltage. 1.input/output timing diagram high active (when input signal (hin or lin) is ?? then output signal (ho or lo) is ??) because there is not interlock circuit, in the case of both input signals (hin and lin) are ?? output signals (ho and lo) become ?? hin lin ho lo in out t dlh t r 50% 50% 90% 90% 10% 10% t dhl t f timing requirement
mar. 2006 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductors M81719FP high voltage half bridge driver 2.v cc (v bs ) supply under voltage lockout timing diagram when v cc supply voltage keeps lower uv trip voltage (v ccuvt = v ccuvr ? ccuvh ) for v cc supply uv filter time, output signal becomes ?? and then, when v cc supply voltage is higher than uv reset voltage, output signal lo becomes ?? when v cc supply voltage keeps lower uv trip voltage (v ccuvt = v ccuvr ? ccuvh ) for v cc supply uv filter time, output signal becomes ?? and then, when v cc supply voltage is higher than uv reset voltage, input signal (lin) is l; output signal ho becomes ?? when v bs supply voltage keeps lower uv trip voltage (v bsuvt = v bsuvr ? bsuvh ) for v bs supply uv filter time, output signal becomes ?? and then, v bs supply voltage is higher than uv reset voltage, output signal ho keeps ??until next input signal hin is ?? v cc lo lin t vccuv v ccuvr v ccuvh v ccuvt v cc lin (l) v bs(h) ho hin t vccuv v ccuvr v ccuvh v ccuvt v bs ho hin t vbsuv v bsuvr v bsuvh v bsuvt
mar. 2006 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductors M81719FP high voltage half bridge driver 3.allowable supply voltage transient it is recommended that supplying v cc firstly and supplying v bs secondly. in the case of shutting off supply voltage, shut- ting off v bs firstly and shutting off v cc secondly. at the time of starting v cc and v bs , power supply should be increased slowly. if it is increased rapidly, output signal (ho or lo) may be ?? p ackage outline symbol min nom max a a 2 b c d e h e l l 1 y b 2 dimension in millimeters a 1 i 2 0.05 ?.5 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 ?.27 5.9 6.2 6.5 0.2 0.4 0.6 ?.9 0.1 0 ?0 ?.76 ?.72 1.27 1.9 e e 1 8 5 4 1 h e e d e y f a a 2 a 1 l 1 l c detail f e b 2 e 1 i 2 recommended mount pad z z 1 detail g x z 1 0.595 0.745 0.25 z b x m g consideration as for this product, the terminal of low voltage part and high-voltage part is very clear (the fifth: lo, the sixth: v s ). therefore, pin insulation space distance should be taken enough.
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