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2-mb (64k x 32) pipelined sync sram CY7C1329G cypress semiconductor corporation ? 3901 north first street ? san jose , ca 95134 ? 408-943-2600 document #: 38-05393 rev. ** revised january 26, 2004 features ? registered inputs and outputs for pipelined operation ? 64k 32 common i/o architecture ? 3.3v core power supply ? 2.5v i/o operation ? fast clock-to-output times ? 3.5 ns (for 166-mhz device) ? 4.0 ns (for 133-mhz device) ? provide high-performance 3-1-1-1 access rate ? user-selectable burst counter supporting intel ? pentium ? interleaved or linear burst sequences ? separate processor and controller address strobes ? synchronous self-timed writes ? asynchronous output enable ? offered in jedec-standard 100-pin tqfp package ? ?zz? sleep mode option functional description [1] the CY7C1329G sram integrates 65,536 x 32 sram cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. all synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (clk). the synchronous inputs include all addresses, all data inputs, address-pipelining chip enable ( ce 1 ), depth-expansion chip enables (ce 2 and ce 3 ), burst control inputs ( adsc , adsp , and adv ), write enables ( bw [a:d] , and bwe ), and global write ( gw ). asynchronous inputs include the output enable ( oe ) and the zz pin. addresses and chip enables are registered at rising edge of clock when either address strobe processor ( adsp ) or address strobe controller ( adsc ) are active. subsequent burst addresses can be internally generated as controlled by the advance pin ( adv ). address, data inputs, and write co ntrols are registered on-chip to initiate a self-timed write cycl e.this part supports byte write operations (see pin descriptions and truth table for further details). write cycles can be one to four bytes wide as controlled by the byte write control inputs. gw when active low causes all bytes to be written. the CY7C1329G operates from a +3.3v core power supply while all outputs operate with a +2.5v supply. all inputs and outputs are jedec-standard jesd8-5-compatible. 1 note: 1. for best-practices recommendations, please refer to the cypress application note system design guidelines on www.cypress.com. logic block diagram address register adv clk burst counter and logic clr q1 q0 adsp adsc mode bwe gw ce 1 ce 2 ce 3 oe enable register output registers sense amps output buffers e pipelined enable input registers a 0, a1, a bw b bw c bw d bw a memory array dq s sleep control zz a [1:0] 2 dq a byte write register dq b byte write register dq c byte write register dq d byte write register dq a byte write driver dq b byte write driver dq c byte write driver dq d byte write driver
CY7C1329G document #: 38-05393 rev. ** page 2 of 16 pin configuration selection guide 166 mhz 133 mhz unit maximum access time 3.5 4.0 ns maximum operating current 240 225 ma maximum cmos standby current 40 40 ma a a a a a 1 a 0 nc nc v ss v dd nc nc a a a a a a nc nc dq b dq b v ddq v ssq dq b dq b dq b dq b v ssq v ddq dq b dq b v ss nc v dd zz dq a dq a v ddq v ssq dq a dq a dq a dq a v ssq v ddq dq a dq a nc nc dq c dq c v ddq v ssq dq c dq c dq c dq c v ssq v ddq dq c dq c nc v dd nc v ss dq d dq d v ddq v ssq dq d dq d dq d dq d v ssq v ddq dq d dq d nc a a ce 1 ce 2 bw d bw c bw b bw a ce 3 v dd v ss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode byte a byte b byte d byte c 100-pin tqfp CY7C1329G
CY7C1329G document #: 38-05393 rev. ** page 3 of 16 pin definitions name tqfp i/o description a 0 , a 1 , a 37,36, 32,33,34, 35,44,45, 46,47,48, 49,81,82, 99,100 input- synchronous address inputs used to select one of the 64k address locations . sampled at the rising edge of the clk if adsp or adsc is active low, and ce 1 , ce 2 , and ce 3 are sampled active. a 1 , a 0 feed the 2-bit counter. bw a , bw b , bw c , bw d 93,94,95, 96 input- synchronous byte write select inputs, active low . qualified with bwe to conduct byte writes to the sram. sampled on the rising edge of clk. gw 88 input- synchronous global write enable input, active low . when asserted low on the rising edge of clk, a global write is conduct ed (all bytes are written, regardless of the values on bw [a:d] and bwe ). bwe 87 input- synchronous byte write enable input, active low . sampled on the rising edge of clk. this signal must be asserted low to conduct a byte write. clk 89 input- clock clock input . used to capture all synchronous inputs to the device. also used to increment the burst counter when adv is asserted low, during a burst opera- tion. ce 1 98 input- synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/desel ect the device. adsp is ignored if ce 1 is high. ce 2 97 input- synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device. ce 3 92 input- synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/deselect the device. not connected for bga. where referenced, ce 3 is assumed active throughout this document for bga. oe 86 input- asynchronous output enable, asynchronous input, active low . controls the direction of the i/o pins. when low, the i/o pins behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the first clock of a read cycle when emerging from a deselected state. adv 83 input- synchronous advance input signal, sampled on the rising edge of clk , active low . when asserted, it automatically increments the address in a burst cycle. adsp 84 input- synchronous address strobe from processor, sample d on the rising edge of clk, active low . when asserted low, a is captur ed in the address registers. a 1 , a 0 are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. asdp is ignored when ce 1 is deasserted high. adsc 85 input- synchronous address strobe from controller, sampled on the rising edge of clk, active low . when asserted low, a is captur ed in the address registers. a 1 , a 0 are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. zz 64 input- asynchronous zz ?sleep? input, active high . this input, when high places the device in a non-time-critical ?sleep? c ondition with data integrity preserved. for normal op- eration, this pin has to be low or left floating. zz pin has an internal pull-down. dq a , dq b dq c , dq d 52,53,56,57, 58,59,62,63, 68,69,72,73, 74,75,78,79, 2,3,6,7,8,9, 12,3,18,19, 22,23,24,25, 28,29 i/o- synchronous bidirectional data i/o lines . as inputs, they feed into an on-chip data register that is triggered by the rising edge of cl k. as outputs, they deliver the data contained in the memory location specifi ed by ?a? during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outp uts. when high, dq are placed in a three-state condition.
CY7C1329G document #: 38-05393 rev. ** page 4 of 16 functional overview all synchronous inputs pass through input registers controlled by the rising edge of the clock. all data outputs pass through output registers controlled by the rising edge of the clock. the CY7C1329G supports secondary cache in systems utilizing either a linear or interleaved burst sequence. the interleaved burst order supports pentium and i486 ? processors. the linear burst sequence is suited for processors that utilize a linear burst sequence. the burst order is user selectable, and is determined by sampling the mode input. accesses can be initiated with ei ther the processor address strobe (adsp ) or the controller address strobe (adsc ). address advancement through the burst sequence is controlled by the adv input. a two-bit on-chip wraparound burst counter captures the firs t address in a burst sequence and automatically increments the address for the rest of the burst access. byte write operations are qualif ied with the byte write enable (bwe ) and byte write select (bw [a:d] ) inputs. a global write enable (gw ) overrides all byte write inputs and writes data to all four bytes. all writes are simplified with on-chip synchronous self-timed write circuitry. three synchronous chip selects (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide for easy bank selection and output thr ee-state control. adsp is ignored if ce 1 is high. single read accesses this access is initiated when the following conditions are satisfied at clock rise: (1) adsp or adsc is asserted low, (2) ce 1 , ce 2 , ce 3 are all asserted active, and (3) the write signals (gw , bwe ) are all deasserted high. adsp is ignored if ce 1 is high. the address presented to the address inputs (a) is stored into the address advancement logic and the address register while being presented to the memory array. the corresponding data is allowed to propagate to the input of the output registers. at the risi ng edge of the next clock the data is allowed to propagate through the output register and onto the data bus within t co if oe is active low. the only exception occurs when the sram is emerging from a deselected state to a selected state, its outputs are always three-stated during t he first cycle of the a ccess. after the first cycle of the access, the outpu ts are controlled by the oe signal. consecutive single read cycles are supported. once the sram is deselected at clock rise by the chip select and either adsp or adsc signals, its output will three-state immediately. single write accesses initiated by adsp this access is initiated when both of the following conditions are satisfied at cl ock rise: (1) adsp is asserted low, and (2) ce 1 , ce 2 , ce 3 are all asserted active. the address presented to a is loaded into the address register and the address advancement logic while being delivered to the ram array. the write signals (gw , bwe , and bw [a:d] ) and adv inputs are ignored during this first cycle. adsp -triggered write accesses require two clock cycles to complete. if gw is asserted low on the second clock rise, the data presented to the dq inputs is written into the corre- sponding address location in the memory array. if gw is high, then the write operation is controlled by bwe and bw [a:d] signals. the CY7C1329G provides byte write capability that is described in the write cycle descriptions table. asserting the byte write enable input (bwe ) with the selected byte write (bw [a:d] ) input, will selectively writ e to only the desired bytes. bytes not selected du ring a byte write operation will remain unaltered. a synchronous self-timed write mechanism has been provided to simplify the write operations. because the CY7C1329G is a co mmon i/o device, the output enable (oe ) must be deasserted high before presenting data to the dq inputs. doing so will three-state the output drivers. as a safety precaution, dqs are automatically three-stated whenever a write cycle is detect ed, regardless of the state of oe . single write accesses initiated by adsc adsc write accesses are initiated when the following condi- tions are satisfied: (1) adsc is asserted low, (2) adsp is deasserted high, (3) ce 1 , ce 2 , ce 3 are all asserted active, v dd 15,41,65,91 power supply power supply inputs to the core of the device . v ss 17,40,67,90 ground ground for the core of the device . v ddq 4,11,20, 27,54,61, 70,77 i/o power supply power supply for the i/o circuitry . v ssq 5,10,21, 26,55,60,71, 76 i/o ground ground for the i/o circuitry . mode 31 input- static selects burst order . when tied to gnd selects linear burst sequence. when tied to v dd or left floating selects interleaved burst sequence. this is a strap pin and should remain static during device operation. mode pin has an internal pull-up. nc 1,14,16,30, 38,39,42,43, 50,51,66,80 no connects . not internally connected to the die. pin definitions (continued) name tqfp i/o description
CY7C1329G document #: 38-05393 rev. ** page 5 of 16 and (4) the appropriate combinat ion of the write inputs (gw , bwe , and bw [a:d] ) are asserted active to conduct a write to the desired byte(s). adsc -triggered write accesses require a single clock cycle to complete. the address presented to a is loaded into the address register and the address advancement logic while being delivered to the memory array. the adv input is ignored during this cycle. if a global write is conducted, the data presented to dq is written into the corre- sponding address location in the memory core. if a byte write is conducted, only the selected bytes are written. bytes not selected during a byte write operation will remain unaltered. a synchronous self-timed write mechanism has been provided to simplify the write operations. because the CY7C1329G is a common i/o device, the output enable (oe ) must be deasserted high before presenting data to the dq inputs. doing so will three-state the output drivers. as a safety precaution, dqs are automatically three-stated whenever a write cycle is detect ed, regardless of the state of oe . burst sequences the CY7C1329G provides a two-bit wraparound counter, fed by a 1 , a 0 , that implements either an interleaved or linear burst sequence. the interleaved burst sequence is designed specif- ically to support intel pentium applications. the linear burst sequence is designed to support processors that follow a linear burst sequence. the burst sequence is user selectable through the mode input. asserting adv low at clock rise will automatically increment the burst counter to the next address in the burst sequence. both read and write burst operations are supported. sleep mode the zz input pin is an asynchronous input. asserting zz places the sram in a power conservation ?sleep? mode. two clock cycles are required to enter into or exit from this ?sleep? mode. while in this mode, data integrity is guaranteed. accesses pending when entering the ?sleep? mode are not considered valid nor is the completion of the operation guaranteed. the device must be deselected prior to entering t he ?sleep? mode. ce 1 , ce 2 , ce 3 , adsp , and adsc must remain inactive for the duration of t zzrec after the zz input returns low. interleaved burst address table (mode = floating or v dd ) first address a 1 , a 0 second address a 1 , a 0 third address a 1 , a 0 fourth address a 1 , a 0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst address table (mode = gnd) first address a 1 , a 0 second address a 1 , a 0 third address a 1 , a 0 fourth address a 1 , a 0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min. max. unit i ddzz snooze mode standby current zz > v dd ? 0.2v 40 ma t zzs device operation to zz zz > v dd ? 0.2v 2t cyc ns t zzrec zz recovery time zz < 0.2v 2t cyc ns t zzi zz active to snooze current this parameter is sampled 2t cyc ns t rzzi zz inactive to exit snooze cu rrent this parameter is sampled 0 ns
CY7C1329G document #: 38-05393 rev. ** page 6 of 16 truth table [2, 3, 4, 5, 6, 7] next cycle add. used zz ce 3 ce 2 ce 1 adsp adsc adv oe dq write unselected none l x x h x l x x three-state x unselected none l h x l l x x x three-state x unselected none l x l l l x x x three-state x unselected none l h x l h l x x three-state x unselected none l x l l h l x x three-state x begin read external l l h l l x x x three-state x begin read external l l h l h l x x three-state read continue read next l x x x h h l h three-state read continue read next l x x x h h l l dq read continue read next l x x h x h l h three-state read continue read next l x x h x h l l dq read suspend read current l x x x h h h h three-state read suspend read current l x x x h h h l dq read suspend read current l x x h x h h h three-state read suspend read current l x x h x h h l dq read begin write current l x x x h h h x three-state write begin write current l x x h x h h x three-state write begin write external l l h l h h x x three-state write continue write next l x x x h h h x three-state write continue write next l x x h x h h x three-state write suspend write current l x x x h h h x three-state write suspend write current l x x h x h h x three-state write zz ?sleep? none h x x x x x x x three-state x notes: 2. x = ?don't care.? h =logic high, l = logic low. 3. write = l when any one or more byte write enable signals (bw a ,bw b ,bw c ,bw d ) and bwe = l or gw = l. write = h when all byte write enable signals (bw a ,bw b ,bw c ,bw d ), bwe , gw = h . 4. the dq pins are controlled by the current cycle and the oe signal. oe is asynchronous and is not sampled with the clock. 5. ce 1 , ce 2 , and ce 3 are available only in the tqfp package. 6. the sram always initiates a read cycle when adsp is asserted, regardless of the state of gw , bwe , or bw [a:d] . writes may occur only on subsequent clocks after the adsp or with the assertion of adsc . as a result, oe must be driven high prior to the start of the write cycle to allow the outputs to three-state. oe is a don't care for the remainder of the write cycle 7. oe is asynchronous and is not sampled with t he clock rise. it is masked internally dur ing write cycles. during a read cycle all d ata bits are three-state when oe is inactive or when the device is deselect ed, and all data bits behave as output when oe is active (low) .
CY7C1329G document #: 38-05393 rev. ** page 7 of 16 truth table for read/write [2, 3] function gw bwe bw d bw c bw b bw a read hhxxxx read hlhhhh write byte a ? dq a hlhhhl write byte b ? dq b hlhhlh write bytes b, a h l h h l l write byte c ? dq c hlhlhh write bytes c, a h l h l h l write bytes c, b h l h l l h write bytes c, b, a h l h l l l write byte d ? dq d hl lhhh write bytes d, a h l l h h l write bytes d, b h l l h l h write bytes d, b, a h l l h l l write bytes d, c h l l l h h write bytes d, c, a h l l l h l write bytes d, c, b hllllh write all bytes hlllll write all bytes lxxxxx
CY7C1329G document #: 38-05393 rev. ** page 8 of 16 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ................................. ?65 c to +150 c ambient temperature with power applied............................................. ?55 c to +125 c supply voltage on v dd relative to gnd........ ?0.5v to +4.6v dc voltage applied to outputs in three-state ..................................... ?0.5v to v ddq + 0.5v dc input voltage....................................?0.5v to v dd + 0.5v current into outputs (low).... ..................................... 20 ma static discharge voltage......... ........... ............ ........... >2001v (per mil-std-883, method 3015) latch-up current..................................................... >200 ma operating range range ambient temperature v dd v ddq commercial 0c to +70c 3.3v ?5%/+10% 2.5v ?5% to v dd electrical characteristics over the operating range [8, 9] parameter description test conditions min. max. unit v dd power supply voltage 3.135 3.6 v v ddq i/o supply voltage 2.375 v dd v v oh output high voltage v ddq = 2.5v, v dd = min., i oh = ?4.0 ma 2.4 v v ol output low voltage v ddq = 2.5v, v dd = min., i ol = 8.0 ma 0.4 v v ih input high voltage [8] v ddq = 2.5v 1.7 v dd + 0.3v v v il input low voltage [8] v ddq = 2.5v ?0.3 0.7 v i x input load current except zz and mode gnd v i v ddq ?5 5 a input current of mode input = v ss ?30 a input = v dd 5 a input current of zz input = v ss ?5 a input = v dd 30 a i oz output leakage current gnd v i v ddq, output disabled ?5 5 a i dd v dd operating supply current v dd = max., i out = 0 ma, f = f max = 1/t cyc 6-ns cycle, 166 mhz 240 ma 7.5-ns cycle,133 mhz 225 ma i sb1 automatic cs power-down current?ttl inputs v dd = max, device deselected, v in v ih or v in v il f = f max = 1/t cyc 6-ns cycle, 166 mhz 100 ma 7.5-ns cycle,133 mhz 90 ma i sb2 automatic cs power-down current?cmos inputs v dd = max, device deselected, v in 0.3v or v in > v ddq ? 0.3v, f = 0 all speeds 40 ma i sb3 automatic cs power-down current?cmos inputs v dd = max, device deselected, or v in 0.3v or v in > v ddq ? 0.3v, f = f max = 1/t cyc 6-ns cycle, 166 mhz 85 ma 7.5-ns cycle,133mhz 75 ma i sb4 automatic cs power-down current?ttl inputs v dd = max, device deselected, v in v ih or v in v il , f = 0 all speeds 45 ma notes: 8. overshoot: v ih (ac) < v dd +1.5v (pulse width less than t cyc /2), undershoot: v il (ac) > ?2v (pulse width less than t cyc /2). 9. t power-up : assumes a linear ramp from 0v to v dd (min.) within 200 ms. during this time v ih < v dd and v ddq < v dd
CY7C1329G document #: 38-05393 rev. ** page 9 of 16 thermal resistance [10] parameter description test conditions tqfp package unit ja thermal resistance (junction to ambient) test conditions follow standard test meth- ods and procedures for measuring thermal impedance, per eia/jesd51 41.83 c/w jc thermal resistance (junction to case) 9.99 c/w capacitance [10] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v dd = 3.3v. v ddq = 3.3v 5 pf c clk clock input capacitance 5 pf c i/o input/output capacitance 5 pf ac test loads and waveforms note: 10. tested initially and after any design or process change that may affect these parameters. output r = 1667 ? r =1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v l = 1.25v 2.5v all input pulses v dd gnd 90% 10% 90% 10% 1 ns 1 ns (c) 2.5v i/o test load
CY7C1329G document #: 38-05393 rev. ** page 10 of 16 switching characteristics over the operating range [11, 12] parameter description 166 mhz 133 mhz unit min. max min. max t power v dd (typical) to the first access [13] 11 ms clock t cyc clock cycle time 6.0 7.5 ns t ch clock high 2.5 3.0 ns t cl clock low 2.5 3.0 ns output times t co data output valid after clk rise 3.5 4.0 ns t doh data output hold after clk rise 0.5 0.5 ns t clz clock to low-z [14, 15, 16] 0 0 ns t chz clock to high-z [[14, 15, 16] 3.5 4.0 ns t oev oe low to output valid 3.5 4.5 ns t oelz oe low to output low-z [14, 15, 16] 0 0 ns t oehz oe high to output high-z [14, 15, 16] 3.5 4.0 ns set-up times t as address set-up before clk rise 1.5 1.5 ns t ads adsc , adsp set-up before clk rise 1.5 1.5 ns t advs adv set-up before clk rise 1.5 1.5 ns t wes gw , bwe , bw [a:d] set-up before clk rise 1.5 1.5 ns t ds data input set-up before clk rise 1.5 1.5 ns t ces chip enable set-up before clk rise 1.5 1.5 ns hold times t ah address hold after clk rise 0.5 0.5 ns t adh adsp , adsc hold after clk rise 0.5 0.5 ns t advh adv hold after clk rise 0.5 0.5 ns t weh gw , bwe , bw [a:d] hold after clk rise 0.5 0.5 ns t dh data input hold after clk rise 0.5 0.5 ns t ceh chip enable hold after clk rise 0.5 0.5 ns notes: 11. timing reference level is 1.25v when v ddq = 2.5v. 12. test conditions shown in (a) of ac test loads unless otherwise noted. 13. this part has a voltage regulator internally; t power is the time that the power needs to be supplied above v dd (minimum) initially before a read or write operation can be initiated. 14. t chz , t clz ,t oelz , and t oehz are specified with ac test conditions shown in part (b) of ac test loads. transition is measured 200 mv from steady-state vo ltage. 15. at any given voltage and temperature, t oehz is less than t oelz and t chz is less than t clz to eliminate bus contention betw een srams when sharing the same data bus. these specifications do not imply a bus contention c ondition, but reflect parameters guaranteed over worst case user conditions. device is designed to achieve high-z prior to low-z under the same system conditions 16. this parameter is sampled and not 100% tested.
CY7C1329G document #: 38-05393 rev. ** page 11 of 16 switching waveforms read cycle timing [17] note: 17. on this diagram, when ce is low, ce 1 is low, ce 2 is high and ce 3 is low. when ce is high, ce 1 is high or ce 2 is low or ce 3 is high. t cyc t cl clk adsp t adh t ads address t ch oe adsc ce t ah t as a1 t ceh t ces gw, bwe, bw[a:d] d ata out (q) high-z t clz t doh t co adv t oehz t co single read burst read t oev t oelz t chz adv suspends burst. burst wraps around to its initial state t advh t advs t weh t wes t adh t ads q(a2) q(a2 + 1) q(a2 + 2) q(a1) q(a2) q(a2 + 1) q(a2 + 3) a2 a3 deselect cycle burst continued with new base address don?t care undefined
CY7C1329G document #: 38-05393 rev. ** page 12 of 16 write cycle timing [17, 18] note: 18. full width write can be initiated by either gw low; or by gw high, bwe low and bw [a : d] low. switching waveforms (continued) t cyc t cl clk adsp t adh t ads address t ch oe adsc ce t ah t as a1 t ceh t ces bwe, bw[a :d] d ata out (q) high-z adv burst read burst write d(a2) d(a2 + 1) d(a2 + 1) d(a1) d(a3) d(a3 + 1) d(a3 + 2) d(a2 + 3) a2 a3 data in (d) extended burst write d(a2 + 2) single write t adh t ads t adh t ads t oehz t advh t advs t weh t wes t dh t ds gw t weh t wes byte write signals are ignored for first cycle when adsp initiates burst adsc extends burst adv suspends burst don?t care undefined
CY7C1329G document #: 38-05393 rev. ** page 13 of 16 read/write cycle timing [17, 19, 20] notes: 19. the data bus (q) remains in high-z following a write cycle unless an adsp , adsc , or adv cycle is performed. 20. gw is high. switching waveforms (continued) t cyc t cl clk adsp t adh t ads address t ch oe adsc ce t ah t as a2 t ceh t ces bwe, bw[a:d] d ata out (q) high-z adv single write d(a3) a4 a5 a6 d(a5) d(a6) data in (d) burst read back-to-back reads high-z q(a2) q(a1) q(a4) q(a4+1) q(a4+2) t weh t wes q(a4+3) t oehz t dh t ds t oelz t clz t co back-to-back writes a1 don?t care undefined a3
CY7C1329G document #: 38-05393 rev. ** page 14 of 16 zz mode timing [21, 22] notes: 21. device must be deselected when entering zz mode. see cycle descr iptions table for all possible signal conditions to deselect the device. 22. dqs are in high-z when exiting zz sleep mode. switching waveforms (continued) t zz i supply clk zz t zzrec a ll inputs (except zz) don?t care i ddzz t zzi t rzzi outputs (q) high-z deselect or read only ordering information speed (mhz) ordering code package name package type operating range 133 CY7C1329G-133ac a101 100-lead thin quad flat pack commercial please contact your local cypress sales representative for availability of 166-mhz speed grade option.
CY7C1329G document #: 38-05393 rev. ** page 15 of 16 ? cypress semiconductor corporation, 2004. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do ing so indemnifies cypress semiconductor against all charges. 2 i486 is a trademark, and intel and pentium are registered tradem arks, of intel corporation. powe rpc is a registered trademark of ibm corporation. all product and comp any names mentioned in this document may be trademarks of their respective holders. package diagram 100-pin thin plastic quad flatpack (14 x 20 x 1.4 mm) a101 51-85050-a
CY7C1329G document #: 38-05393 rev. ** page 16 of 16 document history page document title: CY7C1329G 2-mb (64k x 32) pipelined sync sram document number: 38-05393 rev. ecn no. issue date orig. of change description of change ** 200661 see ecn njy new data sheet

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