dxt651 document number: ds31184 rev: 4 - 2 1 of 5 www.diodes.com january 2011 ? diodes incorporated dxt651 60v low v ce(sat) npn surface mount transistor features ? epitaxial planar die construction ? complementary pnp type available (dxt751) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free, rohs compliant (note 1) ? halogen and antimony free "green" device (note 2) mechanical data ? case: sot89 ? case material: molded plasti c. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? weight: 0.052 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DXT651-13 kn2 13 12 2,500 notes: 1. no purposefully added lead. 2. ?green? devices, halogen and antimony free, diodes inc?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com. marking information top view device symbol top view pinout sot89 kn2 = product type marking code = manufacturer?s marking code yww = date code marking y = last digit of year (ex: 7 = 2007) ww = week code (01 ? 53) c e b c e c b kn2 y ww
dxt651 document number: ds31184 rev: 4 - 2 2 of 5 www.diodes.com january 2011 ? diodes incorporated dxt651 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current i c 3 a peak pulse collector current i cm 6 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) p d 1 w thermal resistance, junction to ambient air (note 4) r ja 125 c/w thermal resistance, junction to leads r jl 18.2 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test conditions off characteristics (note 5) collector-base breakdown voltage bv cbo 80 v i c = 100 p a, i e = 0 collector-emitter breakdown voltage bv ceo 60 v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 5 v i e = 100 p a, i c = 0 collector-base cutoff current i cbo 0.1 10 p a v cb = 60v, i e = 0 v cb = 60v, i e = 0, t a = 100c emitter-base cutoff current i ebo 0.1 p a v eb = 4v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce(sat) 0.08 0.23 0.3 0.6 v v i c = 1a, i b = 100ma i c = 3a, i b = 300ma base-emitter saturation voltage v be ( sat ) 0.85 1.25 v i c = 1a, i b = 100ma base-emitter turn-on voltage v be ( on ) 0.8 1 v v ce = 2v, i c = 1a dc current gain h fe 70 100 80 40 200 200 185 120 300 v ce = 2v, i c = 50ma v ce = 2v, i c = 500ma v ce = 2v, i c = 1a v ce = 2v, i c = 2a ac characteristics transition frequency f t 140 200 mhz v ce = 5v, i c = 100ma, f = 100mhz output capacitance c obo 30 pf v cb = 10v, f = 1mhz switching times t on t off 35 230 ns ns v cc = 10v. i c = 500ma, i b1 = i b2 = 50ma notes: 4. device mounted on fr-4 pcb 5. measured under pulsed conditions. pulse width = 300 s. duty cycle d 2%.
dxt651 document number: ds31184 rev: 4 - 2 3 of 5 www.diodes.com january 2011 ? diodes incorporated dxt651 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 175 p , p o w e r di s s i p a t i o n (w) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (note 3) a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 012 345 v , collector emitter voltage (v) ce i , collector current (a) c fig. 2 typical collector current vs.collector-emitter voltage i = 2ma b i = 4ma b i = 6ma b i = 8ma b i = 10ma b 0 50 100 150 200 250 300 350 0.001 0.01 0.1 1 10 i , collector current (a) c h , dc current gain fe fig. 3 typical dc current gain vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a v = 2v ce 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.0001 0.001 0.01 0.1 1 10 i , collector current (a) c v , collector emitter saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 i , collector current (a) c v , base emitter turn-on voltage (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a v = 2v ce 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 i , collector current (a) c v , base emitter saturation voltage (v) be(sat) fig. 6 typical base-emitter saturation voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb
dxt651 document number: ds31184 rev: 4 - 2 4 of 5 www.diodes.com january 2011 ? diodes incorporated dxt651 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 v , reverse voltage (v) r c , output capacitance (pf) obo fig. 7 typical output capacitance characteristics f = 1mhz 0 50 100 150 200 250 020406080100 i , collector current (ma) c f , gain-bandwidth product (mhz) t fig. 8 typical gain-bandwidth product vs. collector current v = 5v f = 100mhz ce package outline dimensions suggested pad layout sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.43 d 4.40 4.60 d1 1.52 1.83 e 2.29 2.60 e 1.50 typ e1 3.00 typ h 3.94 4.25 l 0.89 1.20 all dimensions in mm dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 e1 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
dxt651 document number: ds31184 rev: 4 - 2 5 of 5 www.diodes.com january 2011 ? diodes incorporated dxt651 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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