? 2000 ixys all rights reserved 1 - 4 mwi 75-06 a7 mwi 75-06 a7 t 023 ixys reserves the right to change limits, test conditions and dimensions. ixys reserves the right to change limits, test conditions and dimensions. features npt igbt technology low saturation voltage low switching losses switching frequency up to 30 khz square rbsoa, no latch up high short circuit capability positive temperature coefficient for easy parallelling mos input, voltage controlled ultra fast free wheeling diodes solderable pins for pcb mounting package with copper base plate advantages space savings reduced protection circuits package designed for wave soldering typical applications ac motor control ac servo and robot drives power supplies igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 600 v v ges 20 v i c25 t c = 25c 90 a i c80 t c = 80c 60 a rbsoa v ge = 15 v; r g = 18 ; t vj = 125c i cm = 120 a clamped inductive load; l = 100 h v cek v ces t sc v ce = v ces ; v ge = 15 v; r g = 18 ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 280 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 75 a; v ge = 15 v; t vj = 25c 2.1 2.6 v t vj = 125c 2.5 v v ge(th) i c = 1.5 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 1.3 ma t vj = 125c 0.9 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 50 ns t r 50 ns t d(off) 270 ns t f 40 ns e on 3.5 mj e off 2.5 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 3200 pf q gon v ce = 300v; v ge = 15 v; i c = 75 a 190 nc r thjc (per igbt) 0.44 k/w inductive load, t vj = 125c v ce = 300 v; i c = 75 a v ge = 15 v; r g = 18 i c25 = 90 a v ces = 600 v v ce(sat) typ. = 2.1 v igbt modules sixpack short circuit soa capability square rbsoa type ntc - option mwi 75-06 a7 without ntc mwi 75-06 a7t with ntc ntc 13 17 1 2 3 4 7 8 9 10 11 12 5 6 15 16 14 t t preliminary data
? 2000 ixys all rights reserved 2 - 4 diodes symbol conditions maximum ratings i f25 t c = 25c 140 a i f80 t c = 80c 85 a symbol conditions characteristic values min. typ. max. v f i f = 50 a; v ge = 0 v; t vj = 25c 1.8 2.1 v t vj = 125c 1.3 1.5 v i rm i f = 60 a; di f /dt = -500 a/s; t vj = 125c 28 a t rr v r = 300 v; v ge = 0 v 100 ns r thjc (per diode) 0.61 k/w temperature sensor ntc (mwi ... a7t version only) symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.75 5.0 5.25 k ? b 25/50 3375 k module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ m d mounting torque (m5) 2.7 - 3.3 nm symbol conditions characteristic values min. typ. max. r pin-chip 5m ? d s creepage distance on surface 6 mm d a strike distance in air 6 mm r thch with heatsink compound 0.02 k/w weight 180 g mwi 75-06 a7 mwi 75-06 a7 t dimensions in mm (1 mm = 0.0394") equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) v 0 = 0.95 v; r 0 = 20 m ? free wheeling diode (typ. at t j = 125c) v 0 = 1.014 v; r 0 = 4 m ? thermal response igbt (typ.) c th1 = 0.248 j/k; r th1 = 0.343 k/w c th2 = 1.849 j/k; r th2 = 0.097 k/w free wheeling diode (typ.) c th1 = 0.23 j/k; r th1 = 0.483 k/w c th2 = 1.3 j/k; r th2 = 0.127 k/w higher magnification see outlines.pdf
? 2000 ixys all rights reserved 3 - 4 mwi 75-06 a7 mwi 75-06 a7 t 0 200 400 600 800 1000 0 10 20 30 40 50 60 0 50 100 150 0123456 0 40 80 120 160 200 0 40 80 120 160 200 240 0 5 10 15 20 0123456 0 40 80 120 160 200 t vj = 25 c t vj = 125 c v ce = 300v i c = 75a v ce v i c v ce a i c v q g -di/dt v v ge i rm t rr a/ m s mwi7506a7 t vj = 125 c v r = 300v i f = 60a i rm t rr 9v 11v v ge = 17v 15v 13v a 9v 11v v ge = 17v 15v 13v a 4 6 8 10 12 14 0 40 80 120 160 200 v ce = 20v v v ge a i c t vj = 25 c t vj = 125 c 0.00.51.01.52.02.5 0 40 80 120 160 v v f i f t vj = 25 c t vj = 125 c a ns nc fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode
? 2000 ixys all rights reserved 4 - 4 mwi 75-06 a7 mwi 75-06 a7 t fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and switching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa 04080120160 0.0 2.5 5.0 7.5 10.0 0 25 50 75 100 0 40 80 120 160 0 1 2 3 4 5 0 100 200 300 400 500 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 0 102030405060 0 1 2 3 4 5 0 100 200 300 400 500 0 102030405060 0 2 4 6 8 10 0 20 40 60 80 100 single pulse v ce = 300v v ge = 15v r g = 18 w t vj = 125 c mwi7506a7 v ce = 300v v ge = 15v i c = 75a t vj = 125 c 0 100 200 300 400 500 600 700 0 40 80 120 160 r g = 18 w t vj = 125 c v ce = 300v v ge = 15v r g = 18 w t vj = 125 c e on v ce = 300v v ge = 15v i c = 75a t vj = 125 c t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g w r g w v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt diode v a mj ns ns mj
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