august 1998 f dt457 n n -channel enhancement mode field effect transistor general description features absolute maximum ratings t a = 25 o c unless otherwise noted symbol parameter f dt457 n units v dss drain-source voltage 30 v v gss gate-source voltage - continuous 20 v i d maximum drain current - continuous (note 1a) 5 a - pulsed 16 p d maximum power dissipation (note 1a ) 3 w (note 1 b) 1.3 (note 1c ) 1.1 t j ,t stg operating and storage temperature range -6 5 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 42 c/w r q jc thermal resistance, junction-to-case (note 1) 12 c/w * order option j23z for cropped center drain lead. fdt457 n rev.c 5 a, 3 0 v. r ds(on ) = 0.06 w @ v gs = 10 v r ds(on ) = 0.09 0 w @ v gs = 4.5 v. high density cell design for extremely low r ds(on) . high power and current handling capability in a widely used surface mount package. soic-16 supersot tm -3 supersot t m -8 so-8 sot-223 supersot t m -6 these n -c hannel enhancement mode power field effect transistors are produced using fairchild 's proprietary, high cell density, dmos technology. this very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. these products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and dc motor control. d d s g d s g g d s d sot-223 g d s sot-223 * (j23z) ? 1998 fairchild semiconductor corporation
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 35 mv/ o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j =5 5c 10 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = - 20 v , v ds = 0 v -100 na on characteristics (note 2 ) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.6 3 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -4.2 mv/ o c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5 a 0.043 0.06 w t j =12 5c 0.065 0.1 v gs = 4.5 v, i d = 3.8 a 0.071 0.09 i d(on) on-state drain current v gs = 10 v, v ds = 5 v 5 a g fs forward transconductance v ds = 10 v, i d = 5 a 5 s dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 235 pf c oss output capacitance 145 pf c rss reverse transfer capacitance 50 pf switching ch aracteristics (note 2 ) t d(on ) turn - on delay time v dd = 10 v, i d = 1 a, v gs = 10 v, r gen = 6 w 5 10 ns t r turn - on rise time 12 22 ns t d(off) turn - off delay time 12 22 ns t f turn - off fall time 3 8 ns q g total gate charge v ds = 10 v, i d = 5 a, v gs = 5 v 4.2 5.9 nc q gs gate-source charge 1.3 nc q gd gate-drain charge 1.7 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.5 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.5 a (note 2 ) 0.85 1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fdt457 n rev.c a. 42 o c/w when mounted on a 1 in 2 pad of 2oz cu . b . 95 o c/w when mounted on a 0.066 in 2 pad of 2oz cu . c. 110 o c/w when mounted on a 0.00123 in 2 pad of 2oz cu .
fdt457 n rev.c typical electrical characteristics figure 1. on-region characteristics . figure 2. on-resistance variation with drain current and gate voltage . figure 3. on-resistance variation with temperature . figure 5 . transfer characteristics. figure 4 . on-resistance variation with gate-t o -source voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j r , normalized ds(on) v = 10v gs i = 5 a d 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 v , drain-source voltage (v) i , drain-source current (a) v = 10v gs 4.5 ds d 4.0 3.0 3.5 5.0 6.0 0 2 4 6 8 10 1 1.5 2 2.5 i , drain current (a) drain-source on-resistance v =3.5v gs d r , normalized ds(on) 5.0 7.0 6.0 4.5 4.0 10 2 4 6 8 10 0 0.05 0.1 0.15 0.2 0.25 v ,gate to source voltage (v) r , drain-source on-resistance gs ds(on) i = 2a d t = 25c a t = 125c a 1 2 3 4 5 6 0 2 4 6 8 10 12 14 v , gate to source voltage (v) i , drain current (a) v = 10v ds gs d t = -55c a 125c 25c 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 10 v , body diode forward voltage (v) i , reverse drain current (a) 25c -55c v = 0v gs sd s t = 125c j figure 6 . body diode forward voltage varia tion with source current and temperature.
fdt457 n rev.c figure 10 . single pulse maximum power dissipation. figure 8. capacitance characteristics . figure 7 . gate charge characteristics. figure 9. maximum safe operating area. typical electrical characteristics 0 2 4 6 8 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs v = 5v ds 10v i = 4a d 15v 0.1 0.2 0.5 1 2 5 10 20 50 0.01 0.05 0.1 0.5 1 5 10 20 50 v , drain-source voltage (v) i , drain current (a) rds(on) limit d a dc ds 1s 100ms 10ms 1ms 10s v = 10v single pulse r = 110c/w t = 25c q ja gs a 100s 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 110 c/w q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 2 q ja a j p(pk) t 1 t 2 figure 11 . transient thermal response curve . thermal characterization performed using the conditions described in note 1c . transient thermal response will change depending on the circuit board design. 0.1 0.3 1 3 10 30 30 50 100 200 400 1000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v gs c oss c rss 0.001 0.01 0.1 1 10 100 300 0 40 80 120 160 200 single pulse time (sec) power (w) single pulse r =110c t = 25c q ja a
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