80v n-channel mosfet v ds i d (at v gs =10v) 11 a r ds(on) (at v gs =10v) < 12m ? r ds(on) (at v gs = 7v) < 14.5m ? symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jl w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-ambient a t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c a i d 11 9 80 mj avalanche current c 101 a 45 the AO4444L is fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge and low qrr.the result is outstanding efficiency with controlled switching behavior. this universal technology is well suited for pwm, load switching and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 80v v 25 gate-source voltage drain-source voltage 80 c/w r ja 31 59 40 c thermal characteristics units parameter typ max 2 t a =70c junction and storage temperature range -55 to 150 g d s ao4444 general description features www.freescale.net.cn 1 / 6
symbol min typ max units bv dss 80 v v ds =80v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 2.6 3 3.8 v i d(on) 80 a 10 12 t j =125c 18 22 11.6 14.5 m ? g fs 32 s v sd 0.7 1 v i s 4.5 a c iss 1900 2386 2865 pf c oss 190 276 360 pf c rss 60 100 140 pf r g 0.4 0.8 1.2 ? q g (10v) 30 38 46 nc q gs 10 13 16 nc q gd 61014nc t d(on) 13 ns t r 9ns t d(off) 23 ns t f 5ns t rr 12 18 24 ns q rr 45 65 85 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =11a reverse transfer capacitance i f =11a, di/dt=500a/ s v gs =0v, v ds =40v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? i s =1a,v gs =0v v ds =5v, i d =11a v gs =7v, i d =10a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =40v, i d =11a gate source charge gate drain charge body diode reverse recovery charge i f =11a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =40v, r l =3.64 ? , r gen =3 ? a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. 80v n-channel mosfet ao4444 www.freescale.net.cn 2 / 6
typical electrical and thermal characteristic s 40 0 20 40 60 80 100 0246810 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 6 8 10 12 14 16 18 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =7v i d =10a v gs =10v i d =11a 0 5 10 15 20 25 5678910 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =7v v gs =10v i d =11a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =5v 6v 10v 7v 8v 80v n-channel mosfet ao4444 www.freescale.net.cn 3 / 6
typical electrical and thermal characteristic s 0 2 4 6 8 10 0 10203040 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 20406080 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rs s v ds =40v i d =11a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area (note f) dc r ds(on) limited t j(max) =150c t a =25c 10ms 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 9: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c 10s 100 s 10 s 1ms 80v n-channel mosfet ao4444 www.freescale.net.cn 4 / 6
typical electrical and thermal characteristic s 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =75c/w 50 80 110 140 170 200 0 5 10 15 20 25 30 i s (a) figure 13: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 10 12 i rm (a) di/dt=800a/ s 125oc 125oc 25oc 25oc q rr i rm 0 30 60 90 120 0 200 400 600 800 1000 di/dt (a/ s) figure 15: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 5 10 15 20 25 i rm (a) 125oc 125o 25oc 25oc i s =20a q rr i rm 0 5 10 15 20 25 0 5 10 15 20 25 30 i s (a) figure 14: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 2.5 3 s di/dt=800a/ s 125oc 125oc 25oc 25oc t rr s 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 di/dt (a/ s) figure 16: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 s 125oc 25oc 25oc 125o i s =20a t rr s 80v n-channel mosfet ao4444 www.freescale.net.cn 5 / 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 80v n-channel mosfet ao4444 www.freescale.net.cn 6 / 6
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