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| product specification www.jmnic.com silicon npn power transistors 2SC4160 description ? with to-220f package ? high breakdown voltage. ? high reliability. ? fast switching speed ? wide aso (safe operating area) applications ? 400v/4a switching regulator applications pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220f) and symbol absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cm collector current-peak 8 a i b base current 1.5 a t c =25 ?? 25 p c collector dissipation 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jmnic
product specification www.jmnic.com jm nic silicon npn power transistors 2SC4160 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter breakdown voltage i c =5ma ; r be = ?t 400 v v cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.4a 0.8 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =0.4a ; v ce =5v 15 50 h fe-2 dc current gain i c =2a ; v ce =5v 10 h fe-3 dc current gain i c =10ma ; v ce =5v 10 c ob output capacitance i e =0; v cb =10v;f=1mhz 50 pf f t transition frequency i c =0.4a ; v ce =10v 20 mhz switching times t on turn-on time 0.5 | s t s storage time 2.5 | s t f fall time i c =3a; i b1 =0.6a i b2 =-1.2a v cc =200v ,r l =66.6 |? 0.3 | s product specification www.jmnic.com jm nic silicon npn power transistors 2SC4160 package outline fig.2 outline dimensions |
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