ds30428 rev. 1 - 2 1 of 3 ddc (lo-r1) h www.diodes.com diodes incorporated epitaxial planar die construction complementary pnp types available (dda) built-in biasing resistors lead-free device features maximum ratings @ t a = 25 c unless otherwise specified a m l b c h k g d nxxym mechanical data case: sot-563, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin solderable per mil-std-202, method 208 (note 2) terminal connections: see diagram weight: 0.005 grams (approx.) t c u d o r p w e n sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.15 0.25 0.20 m 0.10 0.18 0.11 all dimensions in mm r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram, top view ddc (lo-r1) h npn pre-biased small signal sot-563 dual surface mount transistor see note 1 note: 1. package is non-polarized. parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for avail ability and minimum order details. 3. mounted on fr4 board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. p/n r1 (nom) r2 (nom) marking ddc122lh ddc142jh DDC122TH ddc142th 0.22k 0.47k 0.22k 0.47k 10k 10k open open n81 n82 n83 n84 characteristic symbol value unit supply voltage v cc 50 v input voltage ddc122lh ddc142jh v in -5 to +6 -5 to +6 v input voltage DDC122TH ddc142th v ebo (max) 5v output current all i c 100 ma power dissipation (note 2) p d 150 mw thermal resistance, junction to ambient air (note 3) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c
ds30428 rev. 1 - 2 2 of 3 ddc (lo-r1) h www.diodes.com t c u d o r p w e n * transistor - for reference only characteristic symbol min typ max unit test condition input voltage ddc122lh ddc142jh v l(off) 0.3 0.3 v v cc = 5v, i o = 100 a ddc122lh ddc142jh v l(on) 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) 0.3v v i o /i l = 5ma/0.25ma input current ddc122lh ddc142jh i l 28 13 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain ddc122lh ddc142jh g l 56 56 v o = 5v, i o = 10ma gain-bandwidth product* f t 200 mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified * transistor - for reference only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 40 v i c = 1ma emitter-base breakdown voltage DDC122TH ddc142th bv ebo 5 v i e = 50 a i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current DDC122TH ddc142th i ebo 0.5 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio DDC122TH ddc142th h fe 100 100 250 250 600 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 200 mhz v ce = 10v, i e = -5ma, f = 100mhz electrical characteristics r1-only @ t a = 25 c unless otherwise specified notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping ddc122lh-7 sot-563 3000/tape & reel ddc142jh-7 sot-563 3000/tape & reel DDC122TH-7 sot-563 3000/tape & reel ddc142th-7 sot-563 3000/tape & reel ordering information (note 4) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key xxx = product type marking code (see page 1) ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september xxxym marking information year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw
ds30428 rev. 1 - 2 3 of 3 ddc (lo-r1) h www.diodes.com t c u d o r p w e n -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d
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