data sheet 1 05.99 sipmos ? small-signal transistor ? p channel ? enhancement mode ? logic level ? v gs(th) = -0.8...-2.0 v pin 1 pin 2 pin 3 g d s type v ds i d r ds(on) package marking bss 92 -240 v -0.15 a 20 w to-92 ss92 type ordering code tape and reel information bss 92 q62702-s497 e6288 bss 92 q62702-s633 e6296 bss 92 q62702-s502 e6325 maximum ratings parameter symbol values unit drain source voltage v ds -240 v drain-gate voltage r gs = 20 k w v dgr -240 gate source voltage v gs 20 continuous drain current t a = 33 ?c i d -0.15 a dc drain current, pulsed t a = 25 ?c i dpuls -0.6 power dissipation t a = 25 ?c p tot 1 w bss 92
bss 92 data sheet 2 05.99 maximum ratings parameter symbol values unit chip or operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip to ambient air 1) r thja 125 k/w din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -0.25 ma, t j = 25 ?c v (br)dss -240 - - v gate threshold voltage v gs = v ds, i d = -1 ma v gs(th) -0.8 -1.5 -2 zero gate voltage drain current v ds = -240 v, v gs = 0 v, t j = 25 ?c v ds = -240 v, v gs = 0 v, t j = 125 ?c v ds = -60 v, v gs = 0 v, t j = 25 ?c i dss - - - - -10 -0.1 -0.2 -100 -1 a gate-source leakage current v gs = -20 v, v ds = 0 v i gss - -10 -100 na drain-source on-state resistance v gs = -10 v, i d = -0.15 a r ds(on) - 10 20 w
bss 92 data sheet 3 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = -15 a g fs 0.06 0.12 - s input capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c iss - 95 130 pf output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c oss - 20 30 reverse transfer capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c rss - 10 15 turn-on delay time v dd = -30 v, v gs = -10 v, i d = -0.25 a r g = 50 w t d(on) - 8 12 ns rise time v dd = -30 v, v gs = -10 v, i d = -0.25 a r g = 50 w t r - 25 40 turn-off delay time v dd = -30 v, v gs = -10 v, i d = -0.25 a r g = 50 w t d(off) - 25 33 fall time v dd = -30 v, v gs = -10 v, i d = -0.25 a r g = 50 w t f - 42 55
bss 92 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 ?c i s - - -0.15 a inverse diode direct current,pulsed t a = 25 ?c i sm - - -0.6 inverse diode forward voltage v gs = 0 v, i f = -0.3 a v sd - -0.85 -1.2 v
bss 92 data sheet 5 05.99 power dissipation p tot = | ( t a ) 0 20 40 60 80 100 120 ?c 160 t a 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 w 1.2 p tot drain current i d = | ( t a ) parameter: v gs 3 -10 v 0 20 40 60 80 100 120 ?c 160 t a 0.00 -0.02 -0.04 -0.06 -0.08 -0.10 -0.12 a -0.16 i d safe operating area i d =f( v ds ) parameter : d = 0.01, t c =25?c drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 ?c 160 t j -215 -220 -225 -230 -235 -240 -245 -250 -255 -260 -265 -270 -275 v -285 v (br)dss
bss 92 data sheet 6 05.99 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s , t j = 25 ?c 0 -1 -2 -3 -4 -5 -6 -7 -8 v -10 v ds 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 a -0.34 i d v gs [v] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l p tot = 1w l -10.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: t p = 80 s, t j = 25 ?c 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 a -0.26 i d 0 5 10 15 20 25 30 35 40 45 50 55 w 65 r ds (on) v gs [v] = a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l l -10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 0 -1 -2 -3 -4 -5 -6 -7 -8 v -10 v gs 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 a -0.40 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds 3 2 x i d x r ds(on)max 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 a -0.40 i d 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 s 0.20 g fs
bss 92 data sheet 7 05.99 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = -0.15 a, v gs = -10 v -60 -20 20 60 100 ?c 160 t j 0 5 10 15 20 25 30 35 40 w 50 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = -1 ma 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 v -4.6 v gs(th) -60 -20 20 60 100 ?c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs =0v, f = 1 mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds 0 10 1 10 2 10 3 10 pf c c oss c iss c rss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -3 -10 -2 -10 -1 -10 0 -10 a i f 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
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