? 1999 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 900 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 26n90 26 a 25n90 25 i dm t c = 25 c, pulse width limited by t jm 26n90 104 a 25n90 100 i ar t c = 25 c 26n90 26 a 25n90 25 e ar t c = 25 c64mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 900 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 20 v, v ds = 0 200 na i dss v ds = 0.8 ?v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 26n90 0.3 ? note 1 25n90 0.33 ? single mosfet die features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z temperature and lighting controls advantages z plus 247 tm package for clip or spring mounting z space savings z high power density hiperfet tm power mosfets 98553d (9/99) plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain s g d (tab) to-264 aa (ixfk) v dss i dss r ds(on) t rr 900 v 26 a 0.30 ? 250 ns 900 v 25 a 0.33 ? 250 ns ixfk/ixfx 26n90 ixfk/ixfx 25n90 preliminary data sheet s
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 18 28 s c iss 8.7 10.8 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 800 1000 pf c rss 300 375 pf t d(on) 60 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 35 ns t d(off) r g = 1 ? (external), 130 n s t f 24 ns q g(on) 240 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 56 nc q gd 107 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26n90 26 a 25n90 25 i sm repetitive; 26n90 104 a pulse width limited by t jm 25n90 100 v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.4 c i rm 10 a i f = i s , -di/dt = 100 a/ s, v r = 100 v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixfk 25n90 ixfx 25n90 ixfk 26n90 ixfx 26n90
? 1999 ixys all rights reserved v ds - volts 0246810 i d - amperes 0 5 10 15 20 v ds - volts 0 5 10 15 20 25 i d - amperes 0 5 10 15 20 25 30 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v gs - volts 234567 i d - amperes 0 5 10 15 20 25 30 i d - amperes 0 1020304050 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts 0 4 8 12 16 20 i d - amperes 0 10 20 30 40 50 6v 5v v gs = 10v v gs = 9v 8v t j = 25c v gs = 9v 8v 7v t j = 25c t j = 125c 4v 4v t j = 25c t j = 125c 5v 6v 4v 5v 6v v gs = 9v 8v 7v t j = 125 o c v gs = 10v 7v i d = 26a i d = 13a t j = 25 o c figure 1. output characteristics at 25 o c figure 2. extended output characteristics at 125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 6. r ds(on) normalized to 0.5 i d25 value vs. t j figure 5. r ds(on) normalized to 0.5 i d25 value vs. i d figure 4. admittance curves ixfk 25n90 ixfx 25n90 ixfk 26n90 ixfx 25n90
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfk 25n90 ixfx 25n90 ixfk 26n90 ixfx 26n90 v sd - volts 0.00.30.60.91.21.5 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 case temperature - o c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 30 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 gate charge - nc 0 50 100 150 200 250 300 350 v gs - volts 0 3 6 9 12 15 crss coss ciss v ds = 500 v i d = 13 a i g = 10 ma f = 1mhz ixf_26n90 t j = 125 o c t j = 25 o c 0.300 ixf_25n90 20000 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 11. transient thermal resistance figure10. drain current vs. case temperature
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