excellent r ds(on) and low gate charge. the two dual n-channel enhancement mode field symbol max q2 unit s v ds v v gs v i dm t j , t stg c symbol v ds i fm t j , t stg junction and storage temperature range power dissipation a w 1.28 -55 to 150 c 2 t a =70c pulsed diode forward current b continuous forward current a p d i f t a =25c t a =70c units 30 v t a =25c parameter reverse voltage a 2.2 20 3 maximum schottky max q1 30 20 8.5 t a =25c t a =70c power dissipation p d pulsed drain current b continuous drain current a i d a 6.6 30 30 8.5 6.6 w -55 to 150 -55 to 150 junction and storage temperature range 2 1.28 1.28 t a =25c t a =70c 2 gate-source voltage 20 30 absolute maximum ratings t a =25c unless otherwise noted parameter drain-source voltage AO4914 features q1 q2 v ds (v) = 30v v ds (v) = 30v i d = 8.5a i d = 8.5a r ds(on) < 18m ? <18m ? (v gs = 10v) r ds(on) < 28m ? <28m ? (v gs = 4.5v) schottky v ds (v) = 30v, i f = 3a, v f <0.5v@1a the AO4914 uses advanced trench technology to provide mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. a schottky diode is co-packaged in parallel with the synchronous mosfet to boost efficiency further AO4914 is pb-free (meets rohs & sony 259 specifications). AO4914l is a green product ordering option. AO4914 and AO4914l are electrically identical. soic-8 g1 s1 g2 s2/a d1 d1 d2/k d2/k 1 2 3 4 8 7 6 5 g2 d2 s2 k a g1 d1 s1 q1 q2 general description effect transistor with schcttky diode www.freescale.net.cn 1 / 8
ao4912, ao4912l symbol units r jl symbol units r jl r jl this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 74 110 maximum junction-to-lead c steady-state 35 40 max c/w c/w parameter: thermal characteristics mosfet q2 typ max maximum junction-to-ambient a t 10s r ja 48 40 thermal characteristics schottky 62.5 40 48 74 62.5 c/w maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state 35 typ maximum junction-to-ambient a steady-state parameter: thermal characteristics mosfet q1 maximum junction-to-ambient a t 10s 47.5 r ja 62.5 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 110 110 maximum junction-to-lead c steady-state 71 32 a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for eac h chip separately. www.freescale.net.cn 2 / 8
AO4914, AO4914l symbol min typ max units bv dss 30 v 0.007 0.05 3.2 10 12 20 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 15.5 18 t j =125c 22.3 27 23 28 m ? g fs 23 s v sd 0.45 0.5 v i s 3.5 a c iss 971 1165 pf c oss 190 pf c rss 110 pf r g 0.7 0.85 ? q g (10v) 19.2 23 nc q g (4.5v) 9.36 11.2 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 7.5 ns t r 4.4 6.5 ns t d(off) 17.3 26 ns t f 3.3 5 ns t rr 18.8 23 ns q rr 9.2 11 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode + schottky reverse recovery time body diode + schottky reverse recovery charge i f =8.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ s v r =30v, t j =125c v r =30v, t j =150c q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions forward transconductance diode + schottky forward voltage i dss ma gate threshold voltage v ds =v gs i d =250 a v r =30v v ds =0v, v gs = 20v zero gate voltage drain current. (set by schottky leakage) gate-body leakage current v gs =0v, v ds =0v, f=1mhz m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =8.5a dynamic parameters maximum body-diode + schottky continuous current r ds(on) static drain-source on-resistance turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? turn-off fall time turn-on delaytime v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance input capacitance output capacitance (fet + schottky) a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for each chip separately. www.freescale.net.cn 3 / 8
AO4914, AO4914l q1 typical electrical and thermal characteristics 40 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 14 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note f) i s (a) 25 c 125 fet+schottky 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a www.freescale.net.cn 4 / 8
AO4914, AO4914l q1 typical electrical and thermal characteristics 40 0 2 4 6 8 10 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss fet+schottky 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 5 / 8
AO4914, AO4914l symbol min typ max units bv dss 30 v 0.003 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 15.5 18 t j =125c 22.3 27 23 28 m ? g fs 23 s v sd 0.75 1 v i s 3a c iss 1040 1250 pf c oss 180 pf c rss 110 pf r g 0.7 0.85 ? q g (10v) 19.2 23 nc q g (4.5v) 9.36 11.2 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 7.5 ns t r 4.4 6.5 ns t d(off) 17.3 26 ns t f 3.3 5 ns t rr 16.7 21 ns q rr 6.7 10 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ s q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =8.5a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 6 / 8
AO4914, AO4914l q2 typical electrical and thermal characteristics 40 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 14 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a www.freescale.net.cn 7 / 8
AO4914, AO4914l q2 typical electrical and thermal characteristics 40 0 2 4 6 8 10 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 8 / 8
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