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1 TGA4823-2-SM may 2012 ? rev c triquint semiconducto r: www. triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com primary applications product description key features measured performance 9.9 - 12.5 gb/s linear/limiting optical modulator driver ? mach-zehnder modulator driver for metro and long haul ? up to 10 vpp linear output voltage ? > 12 vpp limiting mode output voltage ? gain: 19 db ? integrated high frequency bias tee ? internal dc blocks ? single-ended input / output ? bias: vd = 8 v, id = 310 ma, vctrl = +1 v, vg = -0.3 v typical for linear operation ? package dimensions: 8 x 8 x 2.1 mm the triquint TGA4823-2-SM is part of a series of optical driver amplifiers suitable for a variety of driver applications. the TGA4823-2-SM is a high power wideband agc amplifier that typica lly provides 19 db small signal gain with 19 db agc range. the TGA4823-2-SM is an excellent choice for applications requiring high drive combined with high linearity. the TGA4823-2-SM has demonstrated capability to deliver 10vpp while maintaining output harmonic levels near -30dbc for a 2ghz fundamental. the TGA4823-2-SM requires a low frequency choke and control circuitry. rohs compliant and lead-free finish. msl1 per ipc/jedec j-std-020c . evaluation boards available on request. bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical prbs = 2 31 -1; cpc = 50%, 10.7 gb/s; vin = 1vpp
2 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended linear operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage 12 v vd drain voltage 9 v 2/ vg gate voltage range -5 to 0 v 2/ vctrl control voltage range -1 to +2 v 2/ id drain current 400 ma 2/ ig gate current range -1.8 to 18.9 ma ictrl control current range -1.8 to 18.9 ma pin input continuous wave power 27.8 dbm tchannel channel temperature 200 c 2/ 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current , input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter 1/ value vd drain voltage 8 v id drain current 310 ma id_drive drain current under rf drive 350 ma vg typical gate voltage -0.3 v vctrl control voltage 1 v 1/ see assembly diagram for bias instructions.
3 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table symbol parameter test conditions min nominal max units gain small signal gain f = 1.5 ? 2.5 ghz f = 0.1 ? 4 ghz f = 6 ghz f = 8 ghz 18.5 - - - 20 20 19 18 23 - - - db 3db bw small signal 3 db bandwidth 1/ f = 0.1 ? 12 ghz 7.5 9.5 - ghz irl input return loss f = 0.1 ? 7ghz f = 7.1 ? 10 ghz f = 10.1 ? 16 ghz - - - 15 15 9 - - - db orl output return loss f = 0.1 ? 4 ghz f = 4.1 ? 7 ghz f = 7.1 ? 11 ghz f = 11.1 ? 16 ghz - - - - 15 15 15 12 - - - - db gain ripple s21 peak-peak gain variation 2/ f = 0.1 ? 0.5 ghz f = 0.6 ? 5 ghz f = 5.1 ? 10 ghz -0.8 -1.2 -3 0.8 1.2 3 db dlp deviation from s21 linear phase f = 2 ? 10 ghz f = 10.1 ? 15 ghz -40 -175 +/- 30 +/- 150 40 175 deg p2 2 nd harmonic f = 0.5, 2.0, 5.0 ghz pout = 22 dbm -- - 2 2 d b c p3 3 rd harmonic f = 0.5, 2.0, 5.0 ghz pout = 22 dbm -- - 2 6 d b c psat saturated output power f = 2 ghz - 26 ( 12.5) - dbm (vpp) p1db output power @ 1db compression f = 2 ghz - 25 - dbm agc range small signal agc range - 19 - db bias: vd = 8 v, id = 310 ma, vctr l = +1 v, vg = -0.3 v, typical 1 / fit the s21 curve to 4 th order polynomial. assignave gain = |s21| measured between 1.5 and 2.5 ghz. determine 3db point from polynomial fit to s21 curve. 2 / ripple cacluation is defined the difference between measured s21 value (db) and a 4 th order (or less) polynomial fit for s21 (db) for frequency range = 0.1 to 12 ghz.
4 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv power dissipation and thermal properties 1 / for a median life of 1e+6 hours, power dissipation is limited to pd(max) = (150 c ? tbase c)/ jc. 2 / channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 c pd = 3.17 w tchannel = 150 c tm = 1.0e+6 hrs 1 /2 / thermal resistance, jc vd = 8 v id = 310 ma pd = 2.48 w jc = 24.3 (c/w) tchannel = 130 c tm = 5.8e+6 hrs thermal resistance, jc under rf drive vd = 8 v id = 350 ma pout = 26.5 dbm pd = 2.36 w jc = 24.3 (c/w) tchannel = 127 c tm = 7.6e+6 hrs mounting temperature refer to solder reflow profiles (pp16) storage temperature -65 to 150 c median lifetime (tm) vs. channel temperature
5 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical
6 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical
7 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical freq = 2 ghz
8 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data linear mode: bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical prbs = 2 31 -1; cpc = 50%, 10.7 gb/s input eye: vin = 500 mv pp output eye: vin = 500 mv pp , vo pp = 5 v pp input eye: vin = 250 mv pp output eye: vin = 250 mv pp , vo pp = 2.5 v pp
9 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data linear mode: bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical prbs = 2 31 -1; cpc = 50%, 10.7 gb/s input eye: vin = 1 v pp output eye: vin = 1 v pp , vo pp = 9.3 v pp
10 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data limiting mode: bias conditions: vd = 8 v, id = 310 ma, vctrl = +1 v, vg -0.3 v typical prbs = 2 31 -1; cpc = 50%, 10.7 gb/s input eye: vin = 1700 mv pp output eye: vin = 1700 v pp , vo pp = 4.2 v pp output eye: vin = 1700 v pp , vo pp = 8.3 v pp output eye: vin = 1700 v pp , vo pp = 11 v pp
11 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com electrical schematic bias procedures vd=8v, cpc=50% bias on 1. disable the output of the ppg 2. set vd = 0v, vctrl = 0v & vg = 0v 3. set vg = -1.5v 4. increase vd to 8v observing id - assure id = 0ma 5. set vctrl = +1v - id should still be 0ma 6. make vg more positive until id = 310ma. vg will be approximately -0.3v. 7. enable the output of the ppg. 8. output swing adjust : adjust vctrl slightly positive to increase output swing or adjust vctrl slightly negative to decrease the output swing. 9. crossover adjust : adjust vg slightly positive to push the crossover down or adjust vg slightly negative to push the crossover up. bias off 1. disable the output of the ppg 2. set vctrl = 0v 3. set vd = 0v 4. set vg = 0v
12 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended application circuit
13 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended assembly diagram vg vd vctrl vd_bypass rfin rfout TGA4823-2-SM
14 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout pin description 1,2,3,5,6,7,8,9,10, 11,13,14,15,16,18, 19,20,21,22, 23,25,28 n/c 4r f i n 12 vg 17 rf out 24 vd 26 vd_bypass 25, 27 vctrl 29 gnd 1 3 2 4 5 6 7 28 22 23 24252627 21 20 17 18 19 14 15 16 13 12 1110 98 1 2 3 4 5 6 7 11 10 9 8 14 13 12 28 24 25 26 27 21 22 23 18 19 20 17 16 15 29 pin 1 indicator
15 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters materials: package base aluminum nitride (aln) package lid white alumina (al 2 0 3 ) pad finish on package base: electroless gold (au) 0.5 ? 1.0 um over electroless nickel (ni) 2.0 um min. part markings: yy = assembly year, ww= assembly week, zzz = serial number, dxxxxxxx = batch id tga4823-2 yyww zzz dxxxxxxx
16 TGA4823-2-SM may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. assembly notes ordering information recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alc ohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder pas te for attachment. follow solder paste and reflow oven vendors? recommendations when dev eloping a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent me chanical and electrical performance. ? clean the assembly with alcohol. reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec typical solder reflow profiles part package style TGA4823-2-SM 8x8 surface mount

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