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savantic semiconductor product specification silicon pnp power transistors 2SB1367 d escription with to-220f package complement to type 2sd2059 low collector saturation voltage: v ce(sat) =-2.0v(max) at i c =-4a,i b =-0.4a collector power dissipation: p c =30w(t c =25 ) applications with general purpose applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i b base current -0.5 a p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1367 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -100 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -2.0 v v be base-emitter on voltage i c =-4a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 40 240 h fe-2 dc current gain i c =-4a ; v ce =-5v 20 f t transition frequency i c =-1a ; v ce =-5v 5.0 mhz c ob collector output capacitance f=1mhz;v cb =-10v 270 pf h fe-1 classifications r o y 40-80 70-140 120-240
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1367 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SB1367

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