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STA335 B11961 74F148CW SQXO2SM SC54E6 74LS244 55932 74LS244
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  3.4 +0.3 -0.1 0.4 ? 0.1 |? 1 .5 ? 0.1 cathode indification features for general purpose applications this diode features very low turn-on voltage and fast switching. these devices are protected mechanical data case:jed ec mini-melf,glass case weight: approx.0.031 grams symbols min. units 50.0 v v v v v v a pf ns /w 0.45 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.60 thermal resistance junction to ambient c d 0.38 pulse test tp<300 s, <2% @ i f =0.1ma @ i f =1ma storage temperature range t stg reverse breakdow n voltage symbols v r 0.30 @ i f =10ma @ i f =30ma i r BAS86 by a pn junction guard ring agains t exces s ive small signal schottky diode voltage range: 50 v current: 0.2 a mini-melf galaxy electrical voltage, s uch as electros tatic dis charges power dissipation @ t a =65 units c -55 ---+ 125 polarity: color band denotes cathode end absolute ratings v r i f i fm i fsm p tot t j t a 5 1) 125 v ma ma 50 200 1) 500 1) a mw max. ty p. c -55 ---+ 150 electrical characteristics junction temperature ambient operating temperature range r ja @ i f =100ma leakage cu rre nt v r =40v diode capacitance at v r =1v,f=1mhz reverse recovery time @ i f =10ma,i r =10ma,i r =1ma v f forw ard voltage 5.0 8 t rr 5 430 1) value 200 1) 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature continuous reverse voltage forward continuous current @ t a =25 peak forward current @ t a =25 surge forw ard current @ t p <1s, t a =25 0.90 www.galaxycn.com bl document number 0265016 1. bl galaxy electrical dimensions in millimeters
0 100 200 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 1000 t j =-40 t j =125 t j =25 0 10 20 30 4 0 50 60 0.01 0.1 1 10 100 1000 t j =125 100 75 50 25 0 5 1015 202530 2 4 6 8 10 12 14 v f - forward voltage ( v ) t a - ambient temperature( ) v r - reverse voltage ( v ) fig. 3 -- typical reverse characteristics p tot -power ( mw ) fig.4 -- typical junction capacitance v r - reverse voltage ( v ) diode capacitance ( pf ) forward current ( ma ) reverse leaka ge current ( a ) BAS86 fig.1 -- admissible power dissipation vs. ambient temperature fig. 2--typical instantaneous forword characteristics ratings and characteristic curves www.galaxycn.com 2. document number 0265016 bl galaxy electrical


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