?2004 osaoptolightgmbh?tel.+49(0)3065762683? fax+49(0)3065762681?contact@osaopto.com orange item no.: 190210 1. thisspecificationappliestogaasp/gapledch ips 2. structure 2.1 mesastructure 2.2 electrodes pside(anode) aualloy nside(cathode) aualloy 3. outlines(dimensionsinmicrons) wirebondcontactscanalsobecircularorsquare 4. electricalandopticalcharacteristics(t=25c) parameter symbol conditions min typ max unit forwardvoltage v f i f =20ma 2,10 2,50 v reversecurrent i r v r =5v 10 m a luminousintensity* i v i f =20ma 2,0 3,0 mcd peakwavelength l p i f =20ma 635 nm *onrequest,waferswillbedeliveredaccordingt oluminousintensityclasses brightnessmeasurementatosaongoldplate 5. packing diceonadhesivefilmwith1)wirebondsideonto p 2)backcontactontop 6. labeling type lotno. i v typ quantity min max pelectrode 270 pdiffusion nsubstrategap nepitaxygaasp nepitaxygaasp nelectrode 265 265 120
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