advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 36m fast switching characteristic i d 22a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 34.7 -55 to 150 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 14 pulsed drain current 1 80 gate-source voltage + 20 continuous drain current, v gs @ 10v 22 parameter rating drain-source voltage 60 ap9971ags/p rohs-compliant product 200811212 1 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220(p) g d s to-263(s) the to-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP9971AGP) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 36 m ? ? ,
ap9971ags/ p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0v 5.0 v 4.5 v v g = 4 .0v 0 10 20 30 40 50 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10 v 7.0v 5.0 v 4.5 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =15a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 20 30 40 50 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =10a t c =25 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9971ags/p 0 2 4 6 8 10 12 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =15a q v g 10v q gs q gd q g charge 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 d1 d2 e 9.70 10.10 10.50 e1 e2 e3 e 2.04 2.54 3.04 l1 l2 l3 4.50 4.90 5.30 l4 0 ----- 5 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 advanced power electronics corp. symbols 5.10(ref) 1.27(ref) 7.40(ref) 6.40(ref) 8.00(ref) 2.54(ref) 1.50 1.50 part number b b1 e l2 l3 c1 a a1 l4 c ywwsss logo a2 date code (ywwsss) y last digit of the year ww week sss sequence package code 9971ags e d l3 c1 a a1 c d1 e1 meet rohs requirement for low voltage mosfet only e2 e3 l1 d2 5
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.60 3.10 3.60 l4 14.70 15.50 16.00 l5 6.30 6.50 6.70 meet rohs requirement for low voltage mosfet only 6
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